component
AS2304
Public Made by Adomby adom
AnBon MOSFETs, SOT-23. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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as2304: specified limits as data (metadata.characteristics, 14 rows from the datasheet)
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AS2304
AnBon · MOSFETs · SOT-23
AS2304 from AnBon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGS = ±20 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the device is rated for 30 V drain-source voltage (BVDSS) and 2.5 A continuous drain current. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; rated 30 V drain-source voltage, 2.5 A continuous drain current and 10 A pulsed drain current. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AnBon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | V | ID=250uA, VGS=0V | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1.5 | 3 | V | ID=250uA, VGS=VDS | 2 | |
| Diode Forward Voltage Drop | VSD | 1.2 | V | IS=1.25A, VGS=0V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS=30V | 2 | ||
| Gate Body Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 92 | 117 | mΩ | ID=2.5A, VGS=10V | 2 | |
| Static Drain-Source On-State Resistance | RDS(ON) | 142 | 190 | mΩ | ID=2A, VGS=4.5V | 2 | |
| Drain-Source Voltage | BVDSS | 30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current (continuous) | ID | 2.5 | A | 1 | |||
| Drain Current (pulsed) | IDM | 10 | A | 1 | |||
| Total Device Dissipation | PD | 1250 | mW | TA=25℃ | 1 | ||
| Junction Temperature | TJ | 150 | ℃ | 1 | |||
| Storage Temperature | Tstg | -55 | 150 | ℃ | 1 |
CAD (KiCad official)
- Symbol:
AS2304 - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files:
as2304-etched.step/as2304-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);as2304.step/as2304.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: AnBon datasheet (3 pp, sha256
a1197bf3c80cd2db, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AS2304
**AnBon** · MOSFETs · SOT-23
AS2304 from AnBon, in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | GATE | input | Gate terminal of the N-channel MOSFET; gate-source voltage is rated VGS = ±20 V. |
| 2 | SOURCE | passive | Source terminal of the N-channel MOSFET; the device is rated for 30 V drain-source voltage (BVDSS) and 2.5 A continuous drain current. |
| 3 | DRAIN | passive | Drain terminal of the N-channel MOSFET; rated 30 V drain-source voltage, 2.5 A continuous drain current and 10 A pulsed drain current. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | AnBon |
| Package | SOT-23 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 30 | | | V | ID=250uA, VGS=0V | 2 |
| Gate Threshold Voltage | VGS(th) | 1.5 | | 3 | V | ID=250uA, VGS=VDS | 2 |
| Diode Forward Voltage Drop | VSD | | | 1.2 | V | IS=1.25A, VGS=0V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | uA | VGS=0V, VDS=30V | 2 |
| Gate Body Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 92 | 117 | mΩ | ID=2.5A, VGS=10V | 2 |
| Static Drain-Source On-State Resistance | RDS(ON) | | 142 | 190 | mΩ | ID=2A, VGS=4.5V | 2 |
| Drain-Source Voltage | BVDSS | | | 30 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current (continuous) | ID | | | 2.5 | A | | 1 |
| Drain Current (pulsed) | IDM | | | 10 | A | | 1 |
| Total Device Dissipation | PD | | | 1250 | mW | TA=25℃ | 1 |
| Junction Temperature | TJ | | | 150 | ℃ | | 1 |
| Storage Temperature | Tstg | -55 | | 150 | ℃ | | 1 |
## CAD (KiCad official)
- Symbol: `AS2304`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23 (KiCad packages3D, STEP)
- 3D model files: `as2304-etched.step` / `as2304-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `as2304.step` / `as2304.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [AnBon datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588885167775617024) (3 pp, sha256 `a1197bf3c80cd2db`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/as2304-datasheet.pdf)