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APT60DQ60BG

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Microchip Tech Fast Recovery / High Efficiency Diodes, TO-247-2. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Generated by kicad-footprint-generator · KiCad file format 20260206
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APT60DQ60BG

Microchip Tech · Fast Recovery / High Efficiency Diodes · TO-247-2

APT60DQ60BG from Microchip Tech, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode lead of the rectifier diode, which blocks up to 600 V DC reverse voltage (VR) and is the left lead in the package outline drawing.
2 A passive Anode lead of the rectifier diode, which carries up to 60 A average forward current (IF(AV), TC = 110 °C) and is the right lead in the package outline drawing.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TO-247-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum DC reverse voltage VR 600 V 5
Maximum average forward current IF(AV) 60 A TC = 110 °C, duty cycle = 0.5 5
RMS forward current IF(RMS) 94 square wave, 50% duty 5
Non-repetitive forward surge current IFSM 600 TJ = 45 °C, 8.3 ms 5
Avalanche energy EAVL 20 mJ 1 A, 40 mH 5
Operating and storage temperature range TJ, TSTG -55 175 °C 5
Lead temperature for 10 seconds TL 300 5
Junction-to-case thermal resistance RθJC 0.44 °C/W 5
Forward Voltage VF 2 2.4 V IF = 60 A 5
Forward Voltage VF 2.44 V IF = 120 A 5
Forward Voltage VF 1.7 V IF = 60 A, TJ = 125 °C 5
Maximum reverse leakage current IRM 25 μA VR = 600 V 5
Maximum reverse leakage current IRM 500 μA VR = 600 V, TJ = 125 °C 5
Reverse recovery time trr 26 ns IF = 1 A, diF/dt = -100 A/µs, VR = 30 V, TJ = 25 °C 6
Reverse recovery time trr 35 ns IF = 60 A, diF/dt = -200 A/µs, VR = 400 V, TC = 25 °C 6
Reverse recovery change Qrr 45 nC 6
Maximum reverse recovery current IRRM 4 A 6
Reverse recovery time trr 175 ns IF = 60 A, diF/dt = -200 A/µs, VR = 400 V, TC = 125 °C 6
Reverse recovery charge Qrr 680 nC 6
Maximum reverse recovery current IRRM 8 A 6
Reverse recovery time trr 100 ns IF = 60 A, diF/dt = -1000 A/µs, VR = 400 V, TC = 125 °C 6
Reverse recovery change Qrr 1380 nC 6
Maximum reverse recovery current IRRM 26 A 6
Junction capacitance CJ 75 pF VR = 200 V 5

CAD (KiCad official)

  • Symbol: APT60DQ60BG
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2 (KiCad packages3D, STEP)
  • 3D model files: apt60dq60bg-etched.step / apt60dq60bg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apt60dq60bg.step / apt60dq60bg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (11 pp, sha256 b2b2cc859ad19c73, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF