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Contents

README

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APT60DQ120BG

Microchip Tech · Fast Recovery / High Efficiency Diodes · TO-247-2

APT60DQ120BG from Microchip Tech, in a TO-247-2. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 K passive Cathode lead (left lead in the package outline drawing); the device blocks up to 1200 V DC reverse voltage (VR) and carries 60 A average forward current.
2 A passive Anode lead (right lead in the package outline drawing); forward current of 60 A average (IF(AV), TC = 103 °C) flows from anode to cathode.

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TO-247-2
Category Diodes
Pins 2

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum DC reverse voltage VR 1200 V 5
Maximum peak repetitive reverse voltage VRRM 1200 V 5
Maximum working peak reverse voltage VRWM 1200 V 5
Maximum average forward current IF(AV) 60 A TC = 103 °C, duty cycle = 0.5 5
RMS forward current IF(RMS) 87 A 5
Non-repetitive forward surge current IFSM 540 A TJ = 45 °C, 8.3 ms 5
Avalanche energy EAVL 20 mJ 1 A, 40 mH 5
Operating and storage temperature range TJ, TSTG -55 175 °C 5
Lead temperature for 10 seconds TL 300 10 seconds 5
Maximum mounting torque Torque 10 lb-in 5
Maximum mounting torque Torque 1.1 N-m 5
Junction-to-case thermal resistance RθJC 0.4 °C/W 5
Forward voltage VF 2.8 3.3 V IF = 60 A 5
Forward voltage VF 3.35 V IF = 120 A 5
Forward voltage VF 2.11 V IF = 60 A, TJ = 125 °C 5
Maximum reverse leakage current IRM 100 μA VR = 1200 V 5
Maximum reverse leakage current IRM 500 μA VR = 1200 V, TJ = 125 °C 5
Junction capacitance CJ 37 pF VR = 200 V 5
Reverse recovery time trr 30 ns IF = 1 A, diF/dt = -100 A/µs, VR = 30 V, TJ = 25 °C 6
Reverse recovery time trr 320 ns IF = 60 A, diF/dt = -200 A/µs, VR = 800 V, TC = 25 °C 6
Reverse recovery change Qrr 630 nC 6
Maximum reverse recovery current IRRM 5 A 6
Reverse recovery time trr 420 ns IF = 60 A, diF/dt = -200 A/µs, VR = 800 V, TC = 125 °C 6
Reverse recovery charge Qrr 2810 nC 6
Maximum reverse recovery current IRRM 12 A 6
Reverse recovery time trr 190 ns IF = 60 A, diF/dt = -1000 A/µs, VR = 800 V, TC = 125 °C 6
Reverse recovery change Qrr 4415 nC 6
Maximum reverse recovery current IRRM 38 A 6

CAD (KiCad official)

  • Symbol: APT60DQ120BG
  • Footprint: Package_TO_SOT_THT:TO-247-2_Vertical
  • 3D model: TO-247-2 (KiCad packages3D, STEP)
  • 3D model files: apt60dq120bg-etched.step / apt60dq120bg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apt60dq120bg.step / apt60dq120bg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (11 pp, sha256 6bee0c20862cfd42, retrieved 2026-10-16, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF