main
Download ZIP Propose a change
Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 16d ago
viewers apt17ntr-g1: viewers · Ray 16d ago
apt17ntr-g1-etched.glb Publish 0.1.0 · Ray 16d ago
apt17ntr-g1-etched.step apt17ntr-g1: factory component page (tier=lcsc) · Ray 16d ago
apt17ntr-g1-hero.glb apt17ntr-g1: hero GLB from the etched model (keeps the MPN mark) · Ray 16d ago
apt17ntr-g1-hero.overlay.json Publish 0.1.0 · Ray 16d ago
apt17ntr-g1.glb Publish 0.1.0 · Ray 16d ago
apt17ntr-g1.kicad_mod Publish 0.1.0 · Ray 16d ago
apt17ntr-g1.kicad_sym Publish 0.1.0 · Ray 16d ago
apt17ntr-g1.lbr Publish 0.1.0 · Ray 16d ago
apt17ntr-g1.step Publish 0.1.0 · Ray 16d ago
package.json Publish 0.1.0 · Ray 16d ago
page.json Set visibility: public · Ray 16d ago
README.md Publish 0.1.0 · Ray 16d ago

APT17NTR-G1

Diodes Incorporated · Bipolar (BJT) · SOT-23-3

APT17NTR-G1 from Diodes Incorporated, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 B input Base of the NPN transistor; emitter-base breakdown BVEBO is over 10V and continuous base current IB is limited to 25mA.
2 E passive Emitter of the NPN transistor; emitter-base voltage VEBO is limited to 10V.
3 C passive Collector of the NPN transistor; VCEO is 480V, VCES is 700V and continuous collector current IC is 50mA.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Collector-Emitter Breakdown Voltage BVCES 700 V IC = 100µA, VBE = 0V 3
Collector-Emitter Breakdown Voltage BVCEO 480 V IC = 300µA 3
Emitter-Base Breakdown Voltage BVEBO 10 V IE = 100µA 3
Collector Cutoff Current ICEV 10 µA VCE = 700V, VBE = -1.5V 3
DC Current Transfer Static Ratio hFE 21 24.5 IC = 100µA, VCE = 20V 3
DC Current Transfer Static Ratio hFE 20 36.5 IC = 500µA, VCE = 20V 3
DC Current Transfer Static Ratio hFE 35.5 45.5 IC = 10mA, VCE = 20V 3
Collector-Emitter Voltage (VBE = 0V) VCES 700 V VBE = 0V 2
Collector-Emitter Voltage VCEO 480 V 2
Emitter-Base Voltage VEBO 10 V 2
Continuous Collector Current IC 50 mA 2
Peak Pulse Collector Current ICM 100 mA 2
Continuous Base Current IB 25 mA 2
Peak Pulse Base Current IBM 50 mA 2
Power Dissipation PD 0.2 W For SOT23 package 2
Thermal Resistance, Junction to Ambient Air RθJA 625 °C/W For SOT23 package 2
Operating and Storage Temperature Range TJ, TSTG -55 150 °C 2
Electrostatic Discharge - Human Body Model ESD HBM 8000 V JEDEC JESD22-A114, JEDEC class 3B 2
Electrostatic Discharge - Machine Model ESD MM 400 V JEDEC JESD22-A115, JEDEC class C 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts tin  Terminals: Matte Tin Finish; Solderable per MIL-STD-202, Method 208 1

CAD (KiCad official)

  • Symbol: APT17NTR-G1
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: apt17ntr-g1-etched.step / apt17ntr-g1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apt17ntr-g1.step / apt17ntr-g1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (6 pp, sha256 d0ea693fdf070ac3, retrieved 2026-10-19, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF