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Ray Publish 0.1.0 381e7e1 1d ago

APT15DQ120KG

Microchip Tech · Fast Recovery/High Efficiency Diode · TO-220

APT15DQ120KG from Microchip Tech, in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 CATHODE passive Cathode terminal of the 1200 V, 15 A rectifier diode (terminal 1, internally common with terminal 3 and the tab per the datasheet's terminal listing).
2 ANODE passive Anode terminal of the 1200 V, 15 A ultrafast soft recovery rectifier diode.
3 CATHODE passive Cathode terminal of the 1200 V, 15 A rectifier diode (terminal 3, listed as cathode alongside terminal 1).

Key specifications

Parameter Value
Manufacturer Microchip Tech
Package TO-220
Category Diodes
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Maximum DC reverse voltage VR 1200 V TC = 25 °C 2
Maximum peak repetitive reverse voltage VRRM 1200 V TC = 25 °C 2
Maximum working peak reverse voltage VRWM 1200 V TC = 25 °C 2
Maximum average forward current IF(AV) 15 A TC = 127 °C, duty cycle = 0.5 2
Non-repetitive forward surge current IFSM 110 A TJ = 45 °C, 8.3 ms 2
Avalanche-energy EAVL 20 mJ 1 A, 40 mH 2
Operating and storage temperature range TJ, TSTG -55 175 °C 2
Lead temperature for 10 seconds TL 300 °C 10 seconds 2
Junction-to-case thermal resistance RθJC 1.18 °C/W 2
Forward voltage VF 2.8 3.3 V IF = 15 A 3
Forward voltage VF 3.4 V IF = 30 A 3
Forward voltage VF 2.5 V IF = 15 A, TJ = 125 °C 3
Maximum reverse leakage current IRM 100 µA VR = 1200 V 3
Maximum reverse leakage current IRM 500 µA VR = 1200 V, TJ = 125 °C 3
Junction capacitance CJ 17 pF VR = 200 V 3
Reverse recovery time trr 21 ns IF = 1 A; diF/dt = -100 A/µs; VR = 30 V 3
Reverse recovery time trr 240 ns IF = 15 A; diF/dt = -200 A/µs; VR = 800 V 3
Reverse recovery charge Qrr 260 nC IF = 15 A; diF/dt = -200 A/µs; VR = 800 V 3
Maximum reverse recovery current IRRM 3 A IF = 15 A; diF/dt = -200 A/µs; VR = 800 V 3
Reverse recovery time trr 290 ns IF = 15 A; diF/dt = -200 A/µs; VR = 800 V; TJ = 125 °C 3
Reverse recovery charge Qrr 960 nC IF = 15 A; diF/dt = -200 A/µs; VR = 800 V; TJ = 125 °C 3
Maximum reverse recovery current IRRM 6 A IF = 15 A; diF/dt = -200 A/µs; VR = 800 V; TJ = 125 °C 3
Reverse recovery time trr 130 ns IF = 15 A; diF/dt = -1000 A/µs; VR = 800 V; TJ = 125 °C 3
Reverse recovery charge Qrr 1340 nC IF = 15 A; diF/dt = -1000 A/µs; VR = 800 V; TJ = 125 °C 3
Maximum reverse recovery current IRRM 19 A IF = 15 A; diF/dt = -1000 A/µs; VR = 800 V; TJ = 125 °C 3

CAD (KiCad official)

  • Symbol: APT15DQ120KG
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: apt15dq120kg-etched.step / apt15dq120kg-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apt15dq120kg.step / apt15dq120kg.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Microchip Tech datasheet (9 pp, sha256 0045d4a106d3de33, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF