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APR3415BMTR-G1

Public Made by Adom

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Diodes Incorporated AC-DC Controllers & Regulators, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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APR3415BMTR-G1

Diodes Incorporated · AC-DC Controllers & Regulators · SO-8

APR3415BMTR-G1 from Diodes Incorporated, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 DRISR output Synchronous rectification MOSFET drive output; drive output voltage is at least 3.7V at VCC=5V and the pin is rated -0.3 to 6V.
2 VDET bidirectional Synchronous rectification sense input and dynamic function output, connected to DRAIN through a resistor; rated -2 to 50V.
3 AREF passive Programs a voltage reference with a resistor from AREF to GND to enable the synchronous rectification MOSFET drive signal; rated -0.3 to 6V.
4 VCC power_in Power supply connected with system output; recommended 3.3 to 6V, absolute maximum -0.3 to 7.5V.
5 GND power_in Source pin of internal MOSFET, connected to Ground (pins 5 and 6 are both GND).
6 GND power_in Source pin of internal MOSFET, connected to Ground (pins 5 and 6 are both GND).
7 DRAIN passive Drain pin of internal MOSFET (pins 7 and 8 are both DRAIN); rated -2 to 50V.
8 DRAIN passive Drain pin of internal MOSFET (pins 7 and 8 are both DRAIN); rated -2 to 50V.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SO-8
Category Power Supply Chip
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC -0.3 7.5 V 3
Voltage at VDET, DRAIN Pin VDET, VDRAIN -2 50 V 3
Voltage at AREF, DRISR Pin VAREF, VDRISR -0.3 6 V 3
Continuous Drain Current ID 15 A 3
Pulsed Drain Current IDM 60 A 3
Power Dissipation PD 0.7 W TA=+25ºC 3
Operating Junction Temperature TJ 150 ºC 3
Storage Temperature TSTG -65 150 ºC 3
Lead Temperature TLEAD 300 ºC Soldering, 10 sec 3
Thermal Resistance Junction to Ambient θJA 170 ºC/W FR-4, 2oz copper, 1 inch2 pad 3
Thermal Resistance Junction to Case θJC 24 ºC/W FR-4, 2oz copper, 1 inch2 pad 3
Supply Voltage VCC 3.3 6 V 3
Ambient Temperature TA -40 85 ºC 3
Startup Current ISTARTUP 100 150 μA VCC=VSTARTUP-0.1V 4
Operating Current IOP 40 100 150 μA VDET pin floating, VCC=VTRIGGER+20mV 4
Startup Voltage VSTARTUP 2.6 3.1 3.4 V 4
UVLO UVLO 2.3 2.8 3.1 V 4
Internal Trigger Voltage VTRIGGER 5.15 5.2 5.25 V 4
Duty Cycle 4 8 12 % 4
Oscillation Period tOSC 18 30 37.5 μs VCC=5V 4
Internal Trigger Current ITRIGGER 30 42 mA VCC=VTRIGGER, VCC/VDET pin is separately connected to a 20Ω resistor 4
Minimum Period tDIS 18 30 37.5 ms 4
Discharge Voltage VDIS 5.27 5.35 5.43 V 4
Discharge Current IDIS 1.5 3 4.5 mA VCC=VDIS+0.1V 4
Trigger Discharger Gap VDIS-VTRIGGER 30 110 mV 4
Overshoot Voltage for Discharge VOVP 5.7 5.8 5.9 V 4
Overshoot Current for Discharge IOVP 40 100 mA VCC=VOVP+0.1V, VCC pin is connected to a 20Ω resistor 4
Gate Turn On Threshold VTHON 0 1 V 4
Gate Turn Off Threshold VTHOFF -20 -12.5 -5 mV 4
Turn On Delay Time tDON 70 130 ns From VTHON to VDRISR=1V 4
Turn Off Propagation Delay Time tDOFF 100 150 ns From VTHOFF to VDRISR=3V 4
Gate Turn On Rising Time tRG 50 100 ns From 1V to 3V, CL=4.7nF 4
Gate Turn Off Falling Time tFG 50 100 ns From 3V to 1V, CL=4.7nF 4
Minimum On Time tLEB_S 0.9 1.8 2.7 μs 4
Minimum On Time tLEB_L 6.5 μs 4
Drive Output Voltage VDRISR_HIGH 3.7 V VCC=5V 4
SR Minimum Operating Voltage VS_MIN 4.5 V 4
Kqs Kqs 0.325 0.625 mA*μs (VDET-VCC)*tONP = 25Vµs 4
Added OVP Discharge Time tOVP_LAST 2 ms 4
Drain to Source Breakdown Voltage VDSS(BR) 50 V VGS=0V, ID=0.25mA 5
Gate Threshold Voltage VGS(TH) 0.5 0.9 2 V VDS=VGS, ID=0.25mA 5
Zero Gate Voltage Drain Current IDSS 1 μA VDS=50V, VGS=0V 5
Gate to Source Leakage Current IGSS -10 10 μA VGS=10V, VDS=0V 5
Drain to Source On-state Resistance RDS(ON) 12 17 30 mΩ VGS=4.5V, ID=15A 5
Input Capacitance Ciss 1316 pF VGS=0V, VDS=25V, f=1MHz 5
Output Capacitance Coss 97 pF VGS=0V, VDS=25V, f=1MHz 5
Reverse Transfer Capacitance Crss 85 pF VGS=0V, VDS=25V, f=1MHz 5
Gate to Source Charge Qgs 3.2 nC VGS=0V to 10V, VDD=25V, ID=15A 5
Gate to Drain Charge Qgd 5.7 nC VGS=0V to 10V, VDD=25V, ID=15A 5
Total Gate Charge Qg 15.2 nC VGS=0V to 10V, VDD=25V, ID=15A 5
Gate Resistance Rg 0.85 Ω 5

CAD (KiCad official)

  • Symbol: APR3415BMTR-G1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: apr3415bmtr-g1-etched.step / apr3415bmtr-g1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apr3415bmtr-g1.step / apr3415bmtr-g1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (11 pp, sha256 d718b08a12b0d546, retrieved 2026-10-23, tier: manufacturer)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF