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APP540

Public Made by Adom

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ALLPOWER(ShenZhen Quan Li Semiconductor) MOSFETs, TO-220. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsapp540factory-2.0.0extractor-text

Verified APP540

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: APP540 · TO-220 · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 5-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-crt4c8dc/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ app540.kicad_sym✓ app540.kicad_mod✓ app540.step
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Ray Publish 0.1.0 ffc7016 5d ago

APP540

ALLPOWER(ShenZhen Quan Li Semiconductor) · MOSFETs · TO-220

APP540 from ALLPOWER(ShenZhen Quan Li Semiconductor), in a TO-220. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, threshold 2.0 V min to 4.0 V max at VDS=VGS, ID=250µA.
2 D passive Drain; drain-source voltage 100 V max, continuous drain current 33 A at TC=25℃ (tab is also drain per package drawing, not explicitly labeled).
3 S passive Source; body diode forward current IS of 33 A max at TC=25℃.

Key specifications

Parameter Value
Manufacturer ALLPOWER(ShenZhen Quan Li Semiconductor)
Package TO-220
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 100 V Ta=25℃ 1
Gate-Source Voltage VGS -20 20 V Ta=25℃ 1
Continuous Drain Current ID 33 A TC=25℃ 1
Continuous Drain Current ID 23 A TC=100℃ 1
Pulsed Drain Current IDM 110 A Pulse width limited by maximum junction temperature 1
Single Pulsed Avalanche Energy EAS 506.25 mJ L=10mH,IAS=9A,VDD=80A,VG=10V,RG=25Ω starting TJ=25℃ 1
Power Dissipation PD 130 W Ta=25℃ 1
Thermal Resistance Junction to Case RθJC 0.98 ℃/W 1
Thermal Resistance Junction to Ambient RθJA 62.5 ℃/W 1
Junction Temperature TJ 150 ℃ 1
Storage Temperature TSTG -55 150 ℃ 1
Drain-source breakdown voltage V(BR)DSS 100 V VGS = 0V, ID =250µA 2
Zero gate voltage drain current IDSS 100 nA VDS =100V, VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS =±20V, VDS = 0V 2
Gate threshold voltage VGS(th) 2 2.8 4 V VDS =VGS, ID =250µA 2
Drain-source on-resistance RDS(on) 36.2 40 mΩ VGS =10V, ID =16A 2
Gate Resistance Rg 1 1.81 10 Ω VGS =0V, f =1.0MHz 2
Diode Forward voltage VSD 0.85 1.3 V TJ=25℃, VGS =0V, IS=50A 2
Diode Forward current IS 33 A TC=25℃ 2
Input Capacitance Ciss 1700 pF VDS =25V, VGS =0V, f =1.0MHz 2
Output Capacitance Coss 210 pF VDS =25V, VGS =0V, f =1.0MHz 2
Reverse Transfer Capacitance Crss 25 pF VDS =25V, VGS =0V, f =1.0MHz 2
Turn-on delay time td(on) 9.8 ns VDD=50V, ID=16A, VGS =10V, RG=5.1Ω 2
Turn-on rise time tr 39.6 ns VDD=50V, ID=16A, VGS =10V, RG=5.1Ω 2
Turn-off delay time td(off) 46.1 ns VDD=50V, ID=16A, VGS =10V, RG=5.1Ω 2
Turn-off fall time tf 10.1 ns VDD=50V, ID=16A, VGS =10V, RG=5.1Ω 2
Total Gate Charge Qg 33.1 nC VDS=80V, ID=16A, VGS=10V 2
Gate-Source Charge Qgs 6.1 nC VDS=80V, ID=16A, VGS=10V 2
Gate-Drain Charge Qgd 14.7 nC VDS=80V, ID=16A, VGS=10V 2
Body Diode Reverse Recovery Time trr 102 ns TJ=25℃, IF=50A, di/dt=100A/us 2
Body Diode Reverse Recovery Charge Qrr 1.1 uc TJ=25℃, IF=50A, di/dt=100A/us 2

CAD (KiCad official)

  • Symbol: APP540
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220 (KiCad packages3D, STEP)
  • 3D model files: app540-etched.step / app540-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); app540.step / app540.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALLPOWER(ShenZhen Quan Li Semiconductor) datasheet (5 pp, sha256 4d3f96dc6e1bd8ce, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF