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APM4550KC-TRL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsapm4550kc-trl-vbfactory-2.0.0extractor-text

Verified APM4550KC-TRL-VB

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: APM4550KC-TRL-VB · SO-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 14-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-frkpn5i2/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.12)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ apm4550kc-trl-vb.kicad_sym✓ apm4550kc-trl-vb.kicad_mod✓ apm4550kc-trl-vb.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 5d ago
viewers apm4550kc-trl-vb: viewers · Ray 5d ago
apm4550kc-trl-vb-etched.glb Publish 0.1.0 · Ray 5d ago
apm4550kc-trl-vb-etched.step apm4550kc-trl-vb: factory component page (tier=lcsc) · Ray 5d ago
apm4550kc-trl-vb-hero.glb apm4550kc-trl-vb: hero GLB from the etched model (keeps the MPN mark) · Ray 5d ago
apm4550kc-trl-vb-hero.overlay.json Publish 0.1.0 · Ray 5d ago
apm4550kc-trl-vb.glb Publish 0.1.0 · Ray 5d ago
apm4550kc-trl-vb.kicad_mod Publish 0.1.0 · Ray 5d ago
apm4550kc-trl-vb.kicad_sym Publish 0.1.0 · Ray 5d ago
apm4550kc-trl-vb.lbr Publish 0.1.0 · Ray 5d ago
apm4550kc-trl-vb.step Publish 0.1.0 · Ray 5d ago
package.json Publish 0.1.0 · Ray 5d ago
page.json Set visibility: public · Ray 5d ago
README.md Publish 0.1.0 · Ray 5d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 5d ago

APM4550KC-TRL-VB

VBsemi Elec · MOSFETs · SO-8

APM4550KC-TRL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (30 V VDS, ±20 V VGS maximum).
2 G1 input Gate of the N-channel MOSFET, rated ±20 V gate-source maximum.
3 S2 passive Source of the P-channel MOSFET (-30 V VDS, ±20 V VGS maximum).
4 G2 input Gate of the P-channel MOSFET, rated ±20 V gate-source maximum.
5 D2 passive Drain of the P-channel MOSFET, tied to pins 6 for D2; pulsed drain current up to -40 A.
6 D2 passive Drain of the P-channel MOSFET, common with pin 5; pulsed drain current up to -40 A.
7 D1 passive Drain of the N-channel MOSFET, common with pins 8; pulsed drain current up to 40 A.
8 D1 passive Drain of the N-channel MOSFET, common with pin 7; pulsed drain current up to 40 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage, N-Channel VDS 30 V N-Channel 1
Drain-Source Voltage, P-Channel VDS -30 V P-Channel 1
Gate-Source Voltage, N-Channel VGS -20 20 V N-Channel, printed ±20 1
Gate-Source Voltage, P-Channel VGS -20 20 V P-Channel, printed ±20 1
Continuous Drain Current, N-Channel ID 8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current, P-Channel ID -8 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current, N-Channel ID 6.8 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current, P-Channel ID -6.8 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current, P-Channel ID -6.6 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current, N-Channel ID 5.4 A TJ = 150 °C, TA = 70 °C 1
Continuous Drain Current, P-Channel ID -5.3 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current, N-Channel IDM 40 A 10 µs pulse width 1
Pulsed Drain Current, P-Channel IDM -40 A 10 µs pulse width 1
Source-Drain Current Diode Current, N-Channel IS 2.6 A TC = 25 °C 1
Source-Drain Current Diode Current, P-Channel IS -2.6 A TC = 25 °C 1
Source-Drain Current Diode Current, N-Channel IS 1.6 A TA = 25 °C 1
Source-Drain Current Diode Current, P-Channel IS -1.6 A TA = 25 °C 1
Pulsed Source-Drain Current, N-Channel ISM 40 A 1
Pulsed Source-Drain Current, P-Channel ISM -40 A 1
Single Pulse Avalanche Current, N-Channel IAS 10 A L = 0.1 mH 1
Single Pulse Avalanche Current, P-Channel IAS -20 A L = 0.1 mH 1
Single Pulse Avalanche Energy EAS 520 mJ Channel not stated in datasheet 1
Maximum Power Dissipation, N-Channel PD 3.1 W TC = 25 °C 1
Maximum Power Dissipation, P-Channel PD 3.2 W TC = 25 °C 1
Maximum Power Dissipation PD 2 W TA = 25 °C, both channels 1
Maximum Power Dissipation PD 1.28 W TA = 70 °C, both channels 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient, N-Channel RthJA 50 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient, P-Channel RthJA 47 62.5 °C/W t ≤ 10 s 1
Maximum Junction-to-Foot (Drain), N-Channel RthJF 30 40 °C/W Steady state 1
Maximum Junction-to-Foot (Drain), P-Channel RthJF 29 38 °C/W Steady state 1
Maximum Junction-to-Ambient under steady state, N-Channel RthJA 120 °C/W Steady state, note d 1
Maximum Junction-to-Ambient under steady state, P-Channel RthJA 110 °C/W Steady state, note d 1
Drain-Source Breakdown Voltage, N-Channel V(BR)DSS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage, P-Channel V(BR)DSS -30 V VGS = 0 V, ID = -250 µA 2
Gate Threshold Voltage, N-Channel VGS(th) 1 2 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage, P-Channel VGS(th) -2 -1 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage, N-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Gate-Body Leakage, P-Channel IGSS -100 100 nA VDS = 0 V, VGS = ±12 V 2
Zero Gate Voltage Drain Current, N-Channel IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, P-Channel IDSS -1 µA VDS = -30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current, N-Channel IDSS 10 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current, P-Channel IDSS -10 µA VDS = -30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current, N-Channel ID(on) 20 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current, P-Channel ID(on) -20 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.04 Ω VGS = -10 V, ID = -8 A 2
Drain-Source On-State Resistance, N-Channel RDS(on) 0.02 Ω VGS = 8 V, ID = 6.7 A 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.044 Ω VGS = -8 V, ID = -6.5 A 2
Drain-Source On-State Resistance, N-Channel RDS(on) 0.024 Ω VGS = 4.5 V, ID = 6.6 A 2
Drain-Source On-State Resistance, P-Channel RDS(on) 0.05 Ω VGS = -4.5 V, ID = -5 A 2
Turn-On Delay Time, N-Channel td(on) 4 8 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Turn-On Delay Time, P-Channel td(on) 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Rise Time, N-Channel tr 10 17 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Rise Time, P-Channel tr 9 15 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Turn-Off Delay Time, P-Channel td(off) 23 26 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Fall Time, N-Channel tf 5 9 ns VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω 3
Fall Time, P-Channel tf 10 16 ns VDD = -20 V, RL = 2 Ω, ID ≅ -10 A, VGEN = -10 V, Rg = 1 Ω 3
Body Diode Voltage, N-Channel VSD 0.81 1.2 V IS = 5.4 A 3
Body Diode Voltage, P-Channel VSD -1.2 -0.77 V IS = -2 A 3
Body Diode Reverse Recovery Time, N-Channel trr 25 ns IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Time, P-Channel trr 31 57 ns IF = -5 A, dI/dt = -100 A/µs, TJ = 25 °C 3
Body Diode Reverse Recovery Charge, N-Channel Qrr 10 17 nC 3
Body Diode Reverse Recovery Charge, P-Channel Qrr 29 47 nC 3

CAD (KiCad official)

  • Symbol: APM4550KC-TRL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: apm4550kc-trl-vb-etched.step / apm4550kc-trl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apm4550kc-trl-vb.step / apm4550kc-trl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (14 pp, sha256 52b153a4bbd2e8ed, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF