APM4538KC-TRL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin	Name	Type	Function
1	S1	passive	Source of the N-channel MOSFET (30 V VDS, ±20 V VGS).
2	G1	input	Gate of the N-channel MOSFET (±20 V max gate-source voltage).
3	S2	passive	Source of the P-channel MOSFET (-30 V VDS, ±20 V VGS).
4	G2	input	Gate of the P-channel MOSFET (±20 V max gate-source voltage).
5	D2	passive	Drain of the P-channel MOSFET, internally tied to pin 6 (-8 A at TC = 25 °C, package limited).
6	D2	passive	Drain of the P-channel MOSFET, internally tied to pin 5 (-8 A at TC = 25 °C, package limited).
7	D1	passive	Drain of the N-channel MOSFET, internally tied to pin 8 (8 A at TC = 25 °C, package limited).
8	D1	passive	Drain of the N-channel MOSFET, internally tied to pin 7 (8 A at TC = 25 °C, package limited).

Key specifications

Parameter	Value
Manufacturer	VBsemi Elec
Package	SO-8
Category	Triode/MOS Tube/Transistor
Pins	8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter	Symbol	Min	Typ	Max	Unit	Conditions	Page
Drain-Source Voltage N-ch	VDS			30	V	TA = 25 °C	1
Drain-Source Voltage P-ch	VDS			-30	V	TA = 25 °C	1
Gate-Source Voltage N-ch	VGS	-20		20	V		1
Gate-Source Voltage P-ch	VGS	-20		20	V		1
Continuous Drain Current N-ch	ID			8	A	TC = 25 °C, TJ = 150 °C, package limited	1
Continuous Drain Current P-ch	ID			-8	A	TC = 25 °C, TJ = 150 °C, package limited	1
Continuous Drain Current N-ch	ID			6.8	A	TC = 70 °C	1
Continuous Drain Current P-ch	ID			-6.8	A	TC = 70 °C	1
Continuous Drain Current P-ch	ID			-6.6	A	TA = 25 °C, b, c	1
Continuous Drain Current N-ch	ID			5.4	A	TA = 70 °C, b, c	1
Continuous Drain Current P-ch	ID			-5.3	A	TA = 70 °C, b, c	1
Pulsed Drain Current N-ch	IDM			40	A	10 µs pulse width	1
Pulsed Drain Current P-ch	IDM			-40	A	10 µs pulse width	1
Source-Drain Diode Current N-ch	IS			2.6	A	TC = 25 °C	1
Source-Drain Diode Current P-ch	IS			-2.6	A	TC = 25 °C	1
Source-Drain Diode Current N-ch	IS			1.6	A	TA = 25 °C, b, c	1
Source-Drain Diode Current P-ch	IS			-1.6	A	TA = 25 °C, b, c	1
Pulsed Source-Drain Current N-ch	ISM			40	A		1
Pulsed Source-Drain Current P-ch	ISM			-40	A		1
Single Pulse Avalanche Current N-ch	IAS			10	A	L = 0.1 mH	1
Single Pulse Avalanche Current P-ch	IAS			20	A	L = 0.1 mH	1
Maximum Power Dissipation N-ch	PD			3.1	W	TC = 25 °C	1
Maximum Power Dissipation P-ch	PD			3.2	W	TC = 25 °C	1
Maximum Power Dissipation N-ch	PD			2	W	TA = 25 °C, b, c	1
Maximum Power Dissipation P-ch	PD			2	W	TA = 25 °C, b, c	1
Maximum Power Dissipation N-ch	PD			1.28	W	TA = 70 °C, b, c	1
Maximum Power Dissipation P-ch	PD			1.28	W	TA = 70 °C, b, c	1
Operating Junction and Storage Temperature Range	TJ, Tstg	-55		150	°C		1
Junction-to-Ambient Thermal Resistance N-ch	RthJA		50	62.5	°C/W	t ≤ 10 s, b, d	1
Junction-to-Ambient Thermal Resistance P-ch	RthJA		47	62.5	°C/W	t ≤ 10 s, b, d	1
Junction-to-Foot (Drain) Thermal Resistance N-ch	RthJF		30	40	°C/W	Steady State	1
Junction-to-Foot (Drain) Thermal Resistance P-ch	RthJF		29	38	°C/W	Steady State	1
Drain-Source Breakdown Voltage P-ch	VDS	-30			V	VGS = 0 V, ID = - 250 µA	2
Gate-Body Leakage N-ch	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 12 V	2
Gate-Body Leakage P-ch	IGSS	-100		100	nA	VDS = 0 V, VGS = ± 12 V	2
Zero Gate Voltage Drain Current N-ch	IDSS			1	µA	VDS = 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current P-ch	IDSS			-1	µA	VDS = - 30 V, VGS = 0 V	2
Zero Gate Voltage Drain Current N-ch	IDSS			10	µA	VDS = 30 V, VGS = 0 V, TJ = 55 °C	2
Zero Gate Voltage Drain Current P-ch	IDSS			-10	µA	VDS = - 30 V, VGS = 0 V, TJ = 55 °C	2
On-State Drain Current N-ch	ID(on)	20			A	VDS = 5 V, VGS = 10 V	2
On-State Drain Current P-ch	ID(on)	-20			A	VDS = - 5 V, VGS = - 10 V	2
Total Gate Charge P-ch	Qg		41.5	63	nC	VDS = - 20 V, VGS = - 10 V, ID = - 10 A	2
Gate Resistance P-ch	Rg	1.2	5.7	9.6	Ω	f = 1 MHz	2
Rise Time N-ch	tr		10	17	ns	VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω	3
Fall Time N-ch	tf		5	9	ns	VDD = 20 V, RL = 3.7 Ω, ID ≅ 5.4 A, VGEN = 10 V, Rg = 1 Ω	3
Turn-On Delay Time P-ch	td(on)		10	16	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω	3
Rise Time P-ch	tr		9	15	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω	3
Fall Time P-ch	tf		10	16	ns	VDD = - 20 V, RL = 2 Ω, ID ≅ - 10 A, VGEN = - 10 V, Rg = 1 Ω	3
Body Diode Voltage N-ch	VSD		0.81	1.2	V	IS = 5.4 A	3
Body Diode Voltage P-ch	VSD		-0.77	-1.2	V	IS = - 2 A	3
Continuous Source-Drain Diode Current N-ch	IS			2.6	A	TC = 25 °C	3
Continuous Source-Drain Diode Current P-ch	IS			-2.6	A	TC = 25 °C	3
Pulse Diode Forward Current P-ch	ISM			-40	A		3
Body Diode Reverse Recovery Time P-ch	trr		31	57	ns	IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C	3
Body Diode Reverse Recovery Charge N-ch	Qrr		10	17	nC	IF = 5 A, dI/dt = 100 A/µs, TJ = 25 °C	3
Body Diode Reverse Recovery Charge P-ch	Qrr		29	47	nC	IF = - 5 A, dI/dt = - 100 A/µs, TJ = 25 °C	3

CAD (KiCad official)

Symbol: APM4538KC-TRL-VB
Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
3D model: SO-8 (KiCad packages3D, STEP)
3D model files: apm4538kc-trl-vb-etched.step / apm4538kc-trl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apm4538kc-trl-vb.step / apm4538kc-trl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

Datasheet: VBsemi Elec datasheet (14 pp, sha256 9e70fb8650c1b3c9, retrieved 2026-10-31, tier: lcsc)
Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF

APM4538KC-TRL-VB

Verified APM4538KC-TRL-VB

Verification log 1 record

3D Model

Symbol & Footprint

Schematic Symbol

PCB Footprint

Datasheet

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