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APM4301KC-TRL-VB

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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APM4301KC-TRL-VB

VBsemi Elec · MOSFETs · SO-8

APM4301KC-TRL-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are tied together as the source, with continuous source-drain diode current rated at -5 A at TC = 25 °C.
2 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are tied together as the source, with continuous source-drain diode current rated at -5 A at TC = 25 °C.
3 S passive Source terminal of the P-channel MOSFET; pins 1, 2 and 3 are tied together as the source, with continuous source-drain diode current rated at -5 A at TC = 25 °C.
4 G input Gate terminal of the P-channel MOSFET; gate-source voltage is rated ±20 V (absolute maximum), with gate-source leakage specified at VGS = +16 / -20 V.
5 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are tied together as the drain, with drain-source voltage rated -30 V and continuous drain current -18 A at TC = 25 °C.
6 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are tied together as the drain, with drain-source voltage rated -30 V and continuous drain current -18 A at TC = 25 °C.
7 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are tied together as the drain, with drain-source voltage rated -30 V and continuous drain current -18 A at TC = 25 °C.
8 D passive Drain terminal of the P-channel MOSFET; pins 5 to 8 are tied together as the drain, with drain-source voltage rated -30 V and continuous drain current -18 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Triode/MOS Tube/Transistor
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage VDS -30 V VGS = 0 V, ID = -250 μA 2
Gate-source threshold voltage VGS(th) -1 -2.2 V VDS = VGS, ID = 250 μA 2
Gate-source leakage IGSS 100 nA VDS = 0 V, VGS = +16 / -20 V 2
Zero gate voltage drain current IDSS -1 μA VDS = -30 V, VGS = 0 V 2
Zero gate voltage drain current at TJ = 70 °C IDSS -15 μA VDS = -30 V, VGS = 0 V, TJ = 70 °C 2
On-state drain current ID(on) -40 A VDS -10 V, VGS = -10 V 2
Total gate charge Qg 56 84 nC VDS = -15 V, VGS = -10 V, ID = -10 A 2
Gate resistance Rg 1.5 3.5 6 Ω f = 1 MHz 2
Turn-on delay time (VGEN = -10 V) td(on) 5 30 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -10 V, Rg = 1 2
Rise time (VGEN = -10 V) tr -6 12 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -10 V, Rg = 1 2
Turn-off delay time (VGEN = -10 V) td(off) -39 78 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -10 V, Rg = 1 2
Fall time (VGEN = -10 V) tf -10 20 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -10 V, Rg = 1 2
Turn-on delay time (VGEN = -4.5 V) td(on) 34 68 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -4.5 V, Rg = 1 2
Rise time (VGEN = -4.5 V) tr 86 172 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -4.5 V, Rg = 1 2
Turn-off delay time (VGEN = -4.5 V) td(off) -31 62 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -4.5 V, Rg = 1 2
Fall time (VGEN = -4.5 V) tf -22 44 ns VDD = -15 V, RL = 1.5, ID = -10 A, VGEN = -4.5 V, Rg = 1 2
Continuous source-drain diode current IS -5 A TC = 25 °C 2
Pulse diode forward current ISM -150 A 2
Body diode voltage VSD -0.73 -1.1 V IS = -5 A, VGS = 0 V 2
Body diode reverse recovery time trr -44 88 ns IF = -10 A, di/dt = 100 A/μs, TJ = 25 °C 2
Body diode reverse recovery charge Qrr -41 82 nC 2
Reverse recovery fall time ta -19 ns 2
Drain-source voltage VDS -30 V TA = 25 °C unless otherwise noted 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID -18 A TC = 25 °C, TJ = 150 °C 1
Continuous drain current ID -13 A TC = 70 °C 1
Continuous drain current ID -11 A TA = 25 °C 1
Continuous drain current ID -8 A TA = 70 °C 1
Pulsed drain current IDM -145 A t = 100 μs 1
Continuous source-drain diode current IS -5 A TC = 25 °C 1
Continuous source-drain diode current IS -2.8 A TA = 25 °C, notes b, c 1
Single pulse avalanche current IAS -25 A L = 0.1 mH 1
Single pulse avalanche energy EAS 31.2 mJ 1
Maximum power dissipation PD 5.6 W TC = 25 °C 1
Maximum power dissipation PD 3.6 W TC = 70 °C 1
Maximum power dissipation PD 3.1 W TA = 25 °C, notes b, c 1
Maximum power dissipation PD 2 W TA = 70 °C, notes b, c 1
Operating junction and storage temperature range TJ, Tstg -55 150 °C 1
Soldering recommendations (peak temperature) 260 °C note c: t = 10 s 1
Maximum junction-to-ambient RthJA 34 40 °C/W t = 10 s, notes b, c 1
Maximum junction-to-ambient, steady state RthJA 85 °C/W steady state, note f 1
Maximum junction-to-case (drain), steady state RthJF 18 22 °C/W steady state 1
Drain-source on-state resistance RDS(on) 0.005 Ω VGS = -10 V, ID = -15 A 2
Drain-source on-state resistance RDS(on) 0.008 Ω VGS = -4.5 V, ID = -10 A 2
VDS temperature coefficient VDS/TJ -17 mV/°C ID = -10 mA 2
VGS(th) temperature coefficient VGS(th)/TJ 5.5 mV/°C ID = -250 μA 2
Forward transconductance gfs 81 S VDS = -15 V, ID = -15 A 2
Input capacitance Ciss 3490 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Output capacitance Coss 1420 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Reverse transfer capacitance Crss 70 pF VDS = -15 V, VGS = 0 V, f = 1 MHz 2
Gate-source charge Qgs -9.4 nC 2
Gate-drain charge Qgd -8.2 nC 2

Materials and finish

As the datasheet states them (page.json metadata.appearance; the 3D model's colours follow it).

Part Material Colour / plating Datasheet says Page
contacts copper d. The SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation 1

CAD (KiCad official)

  • Symbol: APM4301KC-TRL-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: apm4301kc-trl-vb-etched.step / apm4301kc-trl-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); apm4301kc-trl-vb.step / apm4301kc-trl-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 5a1dedfecc82467c, retrieved 2026-10-29, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF