component
APM3048ADU4-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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APM3048ADU4-VB
VBsemi Elec · MOSFETs · TO-252-4L
APM3048ADU4-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60 V VDS, 35 A continuous at TC=25°C). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20 V maximum). |
| 3 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the tab (center position in the pin order S1 G1 D1/D2 S2 G2). |
| 4 | S2 | passive | Source of the P-channel MOSFET (-60 V VDS, -20 A continuous at TC=25°C). |
| 5 | G2 | input | Gate of the P-channel MOSFET (VGS ±20 V maximum). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS | 60 | V | TA=25°C | 1 | ||
| Drain-Source Voltage (P-ch) | VDS | -60 | V | TA=25°C | 1 | ||
| Gate-Source Voltage (N-ch) | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Gate-Source Voltage (P-ch) | VGS | -20 | 20 | V | TA=25°C | 1 | |
| Continuous Drain Current (N-ch) | ID | 35 | A | TC=25°C | 1 | ||
| Continuous Drain Current (P-ch) | ID | -20 | A | TC=25°C | 1 | ||
| Pulsed Drain Current (N-ch) | IDM | 140 | A | 1 | |||
| Pulsed Drain Current (P-ch) | IDM | -80 | A | 1 | |||
| Continuous Source Current (N-ch) | IS | 35 | A | Diode conduction, TC=25°C | 1 | ||
| Continuous Source Current (P-ch) | IS | -20 | A | Diode conduction, TC=25°C | 1 | ||
| Power Dissipation | PD | 50 | W | TC=25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | Surface mounted on 1" x 1" FR4 board | 1 | ||
| Junction-to-Case Thermal Resistance | RθJC | 3 | °C/W | 1 | |||
| Gate-Source Threshold Voltage (N-ch) | VGS(th) | 1 | V | VDS = VGS, ID = 250 uA | 2 | ||
| Gate-Source Threshold Voltage (P-ch) | VGS(th) | -1 | V | VDS = VGS, ID = -250 uA | 2 | ||
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current (N-ch) | IDSS | 1 | uA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-ch) | IDSS | -1 | uA | VDS = -48 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-ch) | ID(on) | 45 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-ch) | ID(on) | -25 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-Resistance (N-ch) | rDS(on) | 33 | mΩ | VGS = 4.5 V, ID = 16 A | 2 | ||
| Drain-Source On-Resistance (P-ch) | rDS(on) | 50 | mΩ | VGS = -10 V, ID = -10 A | 2 | ||
| Drain-Source On-Resistance (P-ch) | rDS(on) | 60 | mΩ | VGS = -4.5 V, ID = -8 A | 2 | ||
| Forward Transconductance (N-ch) | gfs | 15 | S | VDS = 15 V, ID = 20 A | 2 | ||
| Forward Transconductance (P-ch) | gfs | 11 | S | VDS = -15 V, ID = -10 A | 2 | ||
| Diode Forward Voltage (N-ch) | VSD | 0.89 | V | IS = 17 A, VGS = 0 V | 2 | ||
| Diode Forward Voltage (P-ch) | VSD | -0.98 | V | IS = -10 A, VGS = 0 V | 2 | ||
| Total Gate Charge (N-ch) | Qg | 9 | nC | VDS = 30 V, VGS = 4.5 V, ID = 20 A | 2 | ||
| Input Capacitance (N-ch) | Ciss | 1500 | pF | VDS = 15 V, VGS = 0 V, f = 1 Mhz | 2 | ||
| Output Capacitance (N-ch) | Coss | 84 | pF | VDS = 15 V, VGS = 0 V, f = 1 Mhz | 2 | ||
| Turn-Off Delay Time (N-ch) | td(off) | 27 | ns | VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω | 2 |
CAD (KiCad official)
- Symbol:
APM3048ADU4-VB - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
apm3048adu4-vb-etched.step/apm3048adu4-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);apm3048adu4-vb.step/apm3048adu4-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (11 pp, sha256
a1e64a6c127a6973, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# APM3048ADU4-VB
**VBsemi Elec** · MOSFETs · TO-252-4L
APM3048ADU4-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (60 V VDS, 35 A continuous at TC=25°C). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20 V maximum). |
| 3 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the tab (center position in the pin order S1 G1 D1/D2 S2 G2). |
| 4 | S2 | passive | Source of the P-channel MOSFET (-60 V VDS, -20 A continuous at TC=25°C). |
| 5 | G2 | input | Gate of the P-channel MOSFET (VGS ±20 V maximum). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-ch) | VDS | | | 60 | V | TA=25°C | 1 |
| Drain-Source Voltage (P-ch) | VDS | | | -60 | V | TA=25°C | 1 |
| Gate-Source Voltage (N-ch) | VGS | -20 | | 20 | V | TA=25°C | 1 |
| Gate-Source Voltage (P-ch) | VGS | -20 | | 20 | V | TA=25°C | 1 |
| Continuous Drain Current (N-ch) | ID | | | 35 | A | TC=25°C | 1 |
| Continuous Drain Current (P-ch) | ID | | | -20 | A | TC=25°C | 1 |
| Pulsed Drain Current (N-ch) | IDM | | | 140 | A | | 1 |
| Pulsed Drain Current (P-ch) | IDM | | | -80 | A | | 1 |
| Continuous Source Current (N-ch) | IS | | | 35 | A | Diode conduction, TC=25°C | 1 |
| Continuous Source Current (P-ch) | IS | | | -20 | A | Diode conduction, TC=25°C | 1 |
| Power Dissipation | PD | | | 50 | W | TC=25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | Surface mounted on 1" x 1" FR4 board | 1 |
| Junction-to-Case Thermal Resistance | RθJC | | | 3 | °C/W | | 1 |
| Gate-Source Threshold Voltage (N-ch) | VGS(th) | 1 | | | V | VDS = VGS, ID = 250 uA | 2 |
| Gate-Source Threshold Voltage (P-ch) | VGS(th) | -1 | | | V | VDS = VGS, ID = -250 uA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current (N-ch) | IDSS | | | 1 | uA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-ch) | IDSS | | | -1 | uA | VDS = -48 V, VGS = 0 V | 2 |
| On-State Drain Current (N-ch) | ID(on) | 45 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-ch) | ID(on) | | | -25 | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-Resistance (N-ch) | rDS(on) | | | 33 | mΩ | VGS = 4.5 V, ID = 16 A | 2 |
| Drain-Source On-Resistance (P-ch) | rDS(on) | | | 50 | mΩ | VGS = -10 V, ID = -10 A | 2 |
| Drain-Source On-Resistance (P-ch) | rDS(on) | | | 60 | mΩ | VGS = -4.5 V, ID = -8 A | 2 |
| Forward Transconductance (N-ch) | gfs | | 15 | | S | VDS = 15 V, ID = 20 A | 2 |
| Forward Transconductance (P-ch) | gfs | | 11 | | S | VDS = -15 V, ID = -10 A | 2 |
| Diode Forward Voltage (N-ch) | VSD | | 0.89 | | V | IS = 17 A, VGS = 0 V | 2 |
| Diode Forward Voltage (P-ch) | VSD | | -0.98 | | V | IS = -10 A, VGS = 0 V | 2 |
| Total Gate Charge (N-ch) | Qg | | 9 | | nC | VDS = 30 V, VGS = 4.5 V, ID = 20 A | 2 |
| Input Capacitance (N-ch) | Ciss | | 1500 | | pF | VDS = 15 V, VGS = 0 V, f = 1 Mhz | 2 |
| Output Capacitance (N-ch) | Coss | | 84 | | pF | VDS = 15 V, VGS = 0 V, f = 1 Mhz | 2 |
| Turn-Off Delay Time (N-ch) | td(off) | | 27 | | ns | VDS = 30 V, RL = 1.5 Ω, ID = 20 A, VGEN = 10 V, RGEN = 6 Ω | 2 |
## CAD (KiCad official)
- Symbol: `APM3048ADU4-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files: `apm3048adu4-vb-etched.step` / `apm3048adu4-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `apm3048adu4-vb.step` / `apm3048adu4-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/apm3048adu4-vb-datasheet.pdf) (11 pp, sha256 `a1e64a6c127a6973`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/apm3048adu4-vb-datasheet.pdf)