component
APM2701AC-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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APM2701AC-VB
VBsemi Elec · MOSFETs · TSOP-6
APM2701AC-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (VGS rated ±20 V absolute maximum). |
| 2 | S2 | passive | Source of the P-channel MOSFET (VDS -20 V, continuous drain current -3.4 A at TA = 25 °C). |
| 3 | G2 | input | Gate of the P-channel MOSFET (VGS rated ±20 V absolute maximum). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (VDS -20 V, pulsed drain current 10 A). |
| 5 | S1 | passive | Source of the N-channel MOSFET (VDS 20 V, continuous source current 1.05 A). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20 V, continuous drain current 5.5 A at TA = 25 °C, pulsed 15 A). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.5 | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.5 | -0.8 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Gate-Body Leakage (P-Channel) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 | |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | 1 | µA | VDS = 16 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | -1 | µA | VDS = -16 V, VGS = 0 | 2 | ||
| Zero Gate Voltage Drain Current at TJ = 55 °C (N-Channel) | IDSS | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| Zero Gate Voltage Drain Current at TJ = 55 °C (P-Channel) | IDSS | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current (N-Channel) | ID(on) | 3.7 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-Channel) | ID(on) | 3 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.022 | Ω | VGS = 10 V, ID = 2.5 A | 2 | ||
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | 0.055 | Ω | VGS = -10 V, ID = -1.8 A | 2 | ||
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | 0.03 | Ω | VGS = 4.5 V, ID = 2.0 A | 2 | ||
| Diode Forward Voltage (N-Channel) | VSD | 0.81 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 | |
| Diode Forward Voltage (P-Channel) | VSD | -0.83 | -1.1 | V | IS = -1.05 A, VGS = 0 V | 2 | |
| Total Gate Charge (N-Channel) | Qg | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 5 V, ID = 1.8 A | 2 | |
| Total Gate Charge (P-Channel) | Qg | 2.4 | 3.6 | nC | VDS = -15 V, VGS = -5 V, ID = -1.8 A | 2 | |
| Turn-On Delay Time (N-Channel) | td(on) | 7 | 11 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-On Delay Time (P-Channel) | td(on) | 8 | 12 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Rise Time (N-Channel) | tr | 9 | 14 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Rise Time (P-Channel) | tr | 12 | 18 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time (N-Channel) | td(off) | 13 | 20 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time (P-Channel) | td(off) | 12 | 18 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Fall Time (N-Channel) | tf | 5 | 8 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 | |
| Fall Time (P-Channel) | tf | 7 | 11 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time (N-Channel) | trr | 35 | 60 | ns | IF = 1.05 A, dI/dt = 100 A/µs | 2 | |
| Source-Drain Reverse Recovery Time (P-Channel) | trr | 30 | 60 | ns | IF = -1.05 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source Voltage (N-Channel) | VDS | 20 | V | N-Channel | 1 | ||
| Drain-Source Voltage (P-Channel) | VDS | -20 | V | P-Channel | 1 | ||
| Gate-Source Voltage (N-Channel) | VGS | -20 | 20 | V | N-Channel | 1 | |
| Gate-Source Voltage (P-Channel) | VGS | -20 | 20 | V | P-Channel | 1 | |
| Continuous Drain Current (N-Channel) | ID | 4.2 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current (N-Channel) | ID | 3 | A | TJ = 150 °C, TA = 70 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -3.4 | A | TJ = 150 °C, TA = 25 °C | 1 | ||
| Continuous Drain Current (P-Channel) | ID | -2.3 | A | TJ = 150 °C, TA = 70 °C | 1 | ||
| Continuous Source Current (Diode Conduction) (N-Channel) | IS | 1.05 | A | Diode conduction | 1 | ||
| Continuous Source Current (Diode Conduction) (P-Channel) | IS | -1.05 | A | Diode conduction | 1 | ||
| Maximum Power Dissipation | PD | 1.15 | W | TA = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 0.73 | W | TA = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | 93 | 110 | °C/W | t ≤ 5 s | 1 | |
| Maximum Junction-to-Ambient (Steady State) | RthJA | 130 | 150 | °C/W | Steady state | 1 | |
| Maximum Junction-to-Lead (Steady State) | RthJL | 75 | 90 | °C/W | Steady state | 1 |
CAD (KiCad official)
- Symbol:
APM2701AC-VB - Footprint:
Package_SO:TSOP-6_1.65x3.05mm_P0.95mm - 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files:
apm2701ac-vb-etched.step/apm2701ac-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);apm2701ac-vb.step/apm2701ac-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (10 pp, sha256
8e154a044ea7a9d9, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# APM2701AC-VB
**VBsemi Elec** · MOSFETs · TSOP-6
APM2701AC-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G1 | input | Gate of the N-channel MOSFET (VGS rated ±20 V absolute maximum). |
| 2 | S2 | passive | Source of the P-channel MOSFET (VDS -20 V, continuous drain current -3.4 A at TA = 25 °C). |
| 3 | G2 | input | Gate of the P-channel MOSFET (VGS rated ±20 V absolute maximum). |
| 4 | D2 | passive | Drain of the P-channel MOSFET (VDS -20 V, pulsed drain current 10 A). |
| 5 | S1 | passive | Source of the N-channel MOSFET (VDS 20 V, continuous source current 1.05 A). |
| 6 | D1 | passive | Drain of the N-channel MOSFET (VDS 20 V, continuous drain current 5.5 A at TA = 25 °C, pulsed 15 A). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSOP-6 |
| Category | Transistors/Thyristors |
| Pins | 6 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage (N-Channel) | VGS(th) | 0.5 | 0.8 | 1.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate Threshold Voltage (P-Channel) | VGS(th) | -0.5 | -0.8 | -1.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Body Leakage (N-Channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Gate-Body Leakage (P-Channel) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±8 V | 2 |
| Zero Gate Voltage Drain Current (N-Channel) | IDSS | | | 1 | µA | VDS = 16 V, VGS = 0 | 2 |
| Zero Gate Voltage Drain Current (P-Channel) | IDSS | | | -1 | µA | VDS = -16 V, VGS = 0 | 2 |
| Zero Gate Voltage Drain Current at TJ = 55 °C (N-Channel) | IDSS | | | 5 | µA | VDS = 16 V, VGS = 0 V, TJ = 55 °C | 2 |
| Zero Gate Voltage Drain Current at TJ = 55 °C (P-Channel) | IDSS | | | -5 | µA | VDS = -16 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current (N-Channel) | ID(on) | 3.7 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-Channel) | ID(on) | 3 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | | 0.022 | Ω | VGS = 10 V, ID = 2.5 A | 2 |
| Drain-Source On-State Resistance (P-Channel) | RDS(on) | | | 0.055 | Ω | VGS = -10 V, ID = -1.8 A | 2 |
| Drain-Source On-State Resistance (N-Channel) | RDS(on) | | | 0.03 | Ω | VGS = 4.5 V, ID = 2.0 A | 2 |
| Diode Forward Voltage (N-Channel) | VSD | | 0.81 | 1.1 | V | IS = 1.05 A, VGS = 0 V | 2 |
| Diode Forward Voltage (P-Channel) | VSD | | -0.83 | -1.1 | V | IS = -1.05 A, VGS = 0 V | 2 |
| Total Gate Charge (N-Channel) | Qg | | 2.1 | 3.2 | nC | VDS = 15 V, VGS = 5 V, ID = 1.8 A | 2 |
| Total Gate Charge (P-Channel) | Qg | | 2.4 | 3.6 | nC | VDS = -15 V, VGS = -5 V, ID = -1.8 A | 2 |
| Turn-On Delay Time (N-Channel) | td(on) | | 7 | 11 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Turn-On Delay Time (P-Channel) | td(on) | | 8 | 12 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Rise Time (N-Channel) | tr | | 9 | 14 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Rise Time (P-Channel) | tr | | 12 | 18 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time (N-Channel) | td(off) | | 13 | 20 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Turn-Off Delay Time (P-Channel) | td(off) | | 12 | 18 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Fall Time (N-Channel) | tf | | 5 | 8 | ns | VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω | 2 |
| Fall Time (P-Channel) | tf | | 7 | 11 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 |
| Source-Drain Reverse Recovery Time (N-Channel) | trr | | 35 | 60 | ns | IF = 1.05 A, dI/dt = 100 A/µs | 2 |
| Source-Drain Reverse Recovery Time (P-Channel) | trr | | 30 | 60 | ns | IF = -1.05 A, dI/dt = 100 A/µs | 2 |
| Drain-Source Voltage (N-Channel) | VDS | | | 20 | V | N-Channel | 1 |
| Drain-Source Voltage (P-Channel) | VDS | | | -20 | V | P-Channel | 1 |
| Gate-Source Voltage (N-Channel) | VGS | -20 | | 20 | V | N-Channel | 1 |
| Gate-Source Voltage (P-Channel) | VGS | -20 | | 20 | V | P-Channel | 1 |
| Continuous Drain Current (N-Channel) | ID | | | 4.2 | A | TJ = 150 °C, TA = 25 °C | 1 |
| Continuous Drain Current (N-Channel) | ID | | | 3 | A | TJ = 150 °C, TA = 70 °C | 1 |
| Continuous Drain Current (P-Channel) | ID | | | -3.4 | A | TJ = 150 °C, TA = 25 °C | 1 |
| Continuous Drain Current (P-Channel) | ID | | | -2.3 | A | TJ = 150 °C, TA = 70 °C | 1 |
| Continuous Source Current (Diode Conduction) (N-Channel) | IS | | | 1.05 | A | Diode conduction | 1 |
| Continuous Source Current (Diode Conduction) (P-Channel) | IS | | | -1.05 | A | Diode conduction | 1 |
| Maximum Power Dissipation | PD | | | 1.15 | W | TA = 25 °C | 1 |
| Maximum Power Dissipation | PD | | | 0.73 | W | TA = 70 °C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient (t ≤ 5 s) | RthJA | | 93 | 110 | °C/W | t ≤ 5 s | 1 |
| Maximum Junction-to-Ambient (Steady State) | RthJA | | 130 | 150 | °C/W | Steady state | 1 |
| Maximum Junction-to-Lead (Steady State) | RthJL | | 75 | 90 | °C/W | Steady state | 1 |
## CAD (KiCad official)
- Symbol: `APM2701AC-VB`
- Footprint: `Package_SO:TSOP-6_1.65x3.05mm_P0.95mm`
- 3D model: TSOP-6 (KiCad packages3D, STEP)
- 3D model files: `apm2701ac-vb-etched.step` / `apm2701ac-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `apm2701ac-vb.step` / `apm2701ac-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8609100459306983424) (10 pp, sha256 `8e154a044ea7a9d9`, retrieved 2026-10-17, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/apm2701ac-vb-datasheet.pdf)