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APM2302AAC-TRL-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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Contents
README
markdownAPM2302AAC-TRL-VB
VBsemi Elec · MOSFETs · SOT-23(TO-236)
APM2302AAC-TRL-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET; the gate-source voltage is rated at ±12 V (absolute maximum). |
| 2 | S | passive | Source of the N-channel MOSFET; the continuous source-drain diode current is rated at 1.75 A at TC = 25 °C. |
| 3 | D | passive | Drain of the N-channel MOSFET; drain-source voltage is rated at 20 V and continuous drain current at 6 A (package limited, TC = 25 °C). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 20 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 0.45 | 1 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 8 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 20 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 20 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.022 | Ω | VGS = 4.5 V, ID = 5.0 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.028 | Ω | VGS = 2.5 V, ID = 4.7 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.039 | Ω | VGS = 1.8 V, ID = 4.3 A | 2 | ||
| Total Gate Charge | Qg | 12 | 18 | nC | VDS = 10 V, VGS = 5 V, ID = 5.0 A | 2 | |
| Total Gate Charge | Qg | 8.8 | 14 | nC | VDS = 10 V, VGS = 4.5 V, ID = 5.0 A | 2 | |
| Gate Resistance | Rg | 0.5 | 2.4 | 4.8 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | 0.75 | 1.2 | V | IS = 4 A, VGS = 0 V | 2 | |
| Body Diode Reverse Recovery Time | trr | 12 | 20 | ns | IF = 4 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Rise Time | tr | 17 | 26 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 31 | 47 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 4.5 V, Rg = 1 Ω | 2 | |
| Rise Time | tr | 13 | 20 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 21 | 32 | ns | VDD = 10 V, RL = 2.2 Ω, ID ≅ 4 A, VGEN = 5 V, Rg = 1 Ω | 2 | |
| Drain-Source Voltage | VDS | 20 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C | 1 | |
| Continuous Drain Current | ID | 6 | A | TJ = 150 °C, TC = 25 °C | 1 | ||
| Continuous Drain Current | ID | 5.1 | A | TJ = 150 °C, TC = 70 °C | 1 | ||
| Pulsed Drain Current | IDM | 20 | A | 1 | |||
| Continuous Source-Drain Diode Current | IS | 1.75 | A | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 2.1 | W | TC = 25 °C | 1 | ||
| Maximum Power Dissipation | PD | 1.3 | W | TC = 70 °C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Soldering Peak Temperature | 260 | °C | 1 | ||||
| Junction-to-Ambient Thermal Resistance | RthJA | 80 | 100 | °C/W | t ≤ 5 s | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 40 | 60 | °C/W | Steady State | 1 | |
| Input Capacitance | Ciss | 865 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Output Capacitance | Coss | 105 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Reverse Transfer Capacitance | Crss | 55 | pF | VDS = 10 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Forward Transconductance | gfs | 24 | S | VDS = 10 V, ID = 5.0 A | 2 |
CAD (land: KiCad; 3D: generated from the datasheet)
- Symbol:
APM2302AAC-TRL-VB - Footprint:
Package_TO_SOT_SMD:SOT-23 - 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files:
apm2302aac-trl-vb-etched.step/apm2302aac-trl-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);apm2302aac-trl-vb.step/apm2302aac-trl-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
ca2c12a8af94a2cb, retrieved 2026-11-13, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).