AP9990GH-HF

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  "title": "AP9990GH-HF",
  "brief": "APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
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    "mpn": "AP9990GH-HF",
    "manufacturer": "APEC Advanced Power Elec",
    "package": "TO-252",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
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        "error": "shared DigiKey quota guard: 550 calls left today"
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        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET, rated for a gate-source voltage of +20 V, with a gate threshold VGS(th) of 2 V to 5 V at ID = 250 µA."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET, rated for a drain-source breakdown voltage of 60 V minimum at VGS = 0 V and ID = 250 µA; drain current is 75 A at VGS = 10 V, limited by the package (100 A continuous chip rating)."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET; the body-diode forward on-voltage is 1.3 V maximum at IS = 40 A and VGS = 0 V."
      }
    ],
    "provenance": {
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        "at": "2026-10-09T21:19:47"
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      "cad": "KiCad official (CC-BY-SA 4.0)",
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        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
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        "extents_mm": [
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        "zmin_mm": 0,
        "centre_offset_mm": 0,
        "footprint_binding": "identity",
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  "metadata": {
    "specs": {
      "Manufacturer": "APEC Advanced Power Elec",
      "Package": "TO-252",
      "Category": "Transistors/Thyristors",
      "Pins": "3"
    },
    "characteristics": {
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "BVDSS",
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          "min": 60,
          "typ": null,
          "max": null,
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        {
          "name": "Static Drain-Source On-Resistance",
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        {
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        {
          "name": "Total Gate Charge",
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        {
          "name": "Input Capacitance",
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          "conditions": "f=1.0MHz",
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          "name": "Drain-Source Voltage",
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        },
        {
          "name": "Drain Current, VGS @ 10V (package limit)",
          "symbol": "ID@TC=25℃",
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          "unit": "A",
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          "typ": null,
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          "conditions": "VGS@10V, TC=25℃; package limitation current 75A (note 3)",
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        },
        {
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        {
          "name": "Pulsed Drain Current",
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          "conditions": "",
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        {
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          "name": "Total Power Dissipation",
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        {
          "name": "Storage Temperature Range",
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          "name": "Maximum Thermal Resistance, Junction-case",
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        {
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