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AP9990GH-HF
Public Made by Adomby adom
APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ap9990gh-hf: specified limits as data (metadata.characteristics, 21 rows from the datasheet)
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19d ago
AP9990GH-HF
APEC Advanced Power Elec · MOSFETs · TO-252
AP9990GH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage of +20 V, with a gate threshold VGS(th) of 2 V to 5 V at ID = 250 µA. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source breakdown voltage of 60 V minimum at VGS = 0 V and ID = 250 µA; drain current is 75 A at VGS = 10 V, limited by the package (100 A continuous chip rating). |
| 3 | S | passive | Source of the N-channel MOSFET; the body-diode forward on-voltage is 1.3 V maximum at IS = 40 A and VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 6 | mΩ | VGS=10V, ID=40A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 25 | uA | VDS=48V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS= +20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 59 | 94 | nC | ID=40A | 2 | |
| Input Capacitance | Ciss | 2320 | 3700 | pF | VGS=0V | 2 | |
| Gate Resistance | Rg | 1.3 | 2.6 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.3 | V | IS=40A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 60 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current, VGS @ 10V (package limit) | ID@TC=25℃ | 75 | A | VGS@10V, TC=25℃; package limitation current 75A (note 3) | 1 | ||
| Continuous Drain Current (Chip) | ID@TC=25℃ | 100 | A | TC=25℃ | 1 | ||
| Drain Current, VGS @ 10V | ID@TC=100℃ | 70 | A | VGS@10V, TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 125 | W | TC=25℃ | 1 | ||
| Total Power Dissipation | PD@TA=25℃ | 2.4 | W | TA=25℃ | 1 | ||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 1.2 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | 62.5 | ℃/W | PCB mount; surface mounted on 1 in² copper pad FR4 board (note 4) | 1 |
CAD (KiCad official)
- Symbol:
AP9990GH-HF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap9990gh-hf-etched.step/ap9990gh-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap9990gh-hf.step/ap9990gh-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (7 pp, sha256
8194c63d0b18d617, retrieved 2026-10-09, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP9990GH-HF
**APEC Advanced Power Elec** · MOSFETs · TO-252
AP9990GH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the N-channel MOSFET, rated for a gate-source voltage of +20 V, with a gate threshold VGS(th) of 2 V to 5 V at ID = 250 µA. |
| 2 | D | passive | Drain of the N-channel MOSFET, rated for a drain-source breakdown voltage of 60 V minimum at VGS = 0 V and ID = 250 µA; drain current is 75 A at VGS = 10 V, limited by the package (100 A continuous chip rating). |
| 3 | S | passive | Source of the N-channel MOSFET; the body-diode forward on-voltage is 1.3 V maximum at IS = 40 A and VGS = 0 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 60 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 6 | mΩ | VGS=10V, ID=40A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 25 | uA | VDS=48V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS= +20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 59 | 94 | nC | ID=40A | 2 |
| Input Capacitance | Ciss | | 2320 | 3700 | pF | VGS=0V | 2 |
| Gate Resistance | Rg | | 1.3 | 2.6 | Ω | f=1.0MHz | 2 |
| Forward On Voltage | VSD | | | 1.3 | V | IS=40A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | 60 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current, VGS @ 10V (package limit) | ID@TC=25℃ | | | 75 | A | VGS@10V, TC=25℃; package limitation current 75A (note 3) | 1 |
| Continuous Drain Current (Chip) | ID@TC=25℃ | | | 100 | A | TC=25℃ | 1 |
| Drain Current, VGS @ 10V | ID@TC=100℃ | | | 70 | A | VGS@10V, TC=100℃ | 1 |
| Pulsed Drain Current | IDM | | | 300 | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 125 | W | TC=25℃ | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2.4 | W | TA=25℃ | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c | | | 1.2 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | | | 62.5 | ℃/W | PCB mount; surface mounted on 1 in² copper pad FR4 board (note 4) | 1 |
## CAD (KiCad official)
- Symbol: `AP9990GH-HF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ap9990gh-hf-etched.step` / `ap9990gh-hf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap9990gh-hf.step` / `ap9990gh-hf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586205036057661440) (7 pp, sha256 `8194c63d0b18d617`, retrieved 2026-10-09, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap9990gh-hf-datasheet.pdf)