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AP9620AGM-HF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP9620AGM-HF-VB

VBsemi Elec · MOSFETs · SO-8

AP9620AGM-HF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source of the P-channel MOSFET (VDS rating -20 V), shown on the SO-8 top view.
2 S passive Source of the P-channel MOSFET (VDS rating -20 V), shown on the SO-8 top view.
3 S passive Source of the P-channel MOSFET (VDS rating -20 V), shown on the SO-8 top view.
4 G input Gate of the P-channel MOSFET, with gate-source voltage limited to ±12 V and threshold of -0.5 to -1.2 V.
5 D passive Drain of the P-channel MOSFET, with pulsed drain current up to -50 A.
6 D passive Drain of the P-channel MOSFET, with pulsed drain current up to -50 A.
7 D passive Drain of the P-channel MOSFET, with pulsed drain current up to -50 A.
8 D passive Drain of the P-channel MOSFET, with pulsed drain current up to -50 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SO-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Pulsed Drain Current IDM -50 A TA = 25 °C 1
Continuous Source-Drain Diode Current IS -6 A TC = 25 °C 1
Maximum Power Dissipation PD 19 W TC = 25 °C 1
Maximum Power Dissipation PD 12 W TC = 70 °C 1
Maximum Power Dissipation PD 3.5 W TA = 25 °C, b, c 1
Maximum Power Dissipation PD 2.2 W TA = 70 °C, b, c 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Peak Temperature 260 °C 1
Junction-to-Ambient Thermal Resistance RthJA 28 36 °C/W t ≤ 5 s 1
Junction-to-Case (Drain) Thermal Resistance RthJC 5.3 6.5 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS -20 V VGS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.2 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 20 µA VDS = 0 V, VGS = ± 12 V 2
Gate-Source Leakage IGSS 0.5 µA VDS = 0 V, VGS = ± 4.5 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -20 A VDS ≤ - 5 V, VGS = - 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.015 Ω VGS = - 4.5 V, ID = - 5.6 A 2
Drain-Source On-State Resistance RDS(on) 0.021 Ω VGS = - 2.5 V, ID = - 5.3 A 2
Drain-Source On-State Resistance RDS(on) 0.04 Ω VGS = - 1.8 V, ID = - 2.5 A 2
Total Gate Charge Qg 50 75 nC VDS = - 10 V, VGS = - 8 V, ID = - 5 A 2
Total Gate Charge Qg 20 30 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 2
Gate Resistance Rg 0.2 1 2 kΩ f = 1 MHz 2
Turn-On Delay Time td(on) 0.71 1.1 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 1.7 2.6 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 3.2 5 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 0.3 0.45 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Rise Time tr 0.6 0.9 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 10 15 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Fall Time tf 3.5 5.5 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -6 A TC = 25 °C 2
Pulse Diode Forward Current ISM -50 A 2
Body Diode Voltage VSD -0.85 -1.2 V IS = - 5 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 30 60 ns IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 20 40 nC IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
VDS Temperature Coefficient ΔVDS/TJ -12 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 3 mV/°C ID = - 250 µA 2
Forward Transconductance gfs 35 S VDS = - 10 V, ID = - 5.6 A 2
Gate-Source Charge Qgs 3.3 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 2
Gate-Drain Charge Qgd 8.4 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 5 A 2
Turn-Off Delay Time td(off) 69 us VDD = - 10 V, RL = 1 Ω, ID ≅ - 5 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Reverse Recovery Fall Time ta 13 ns IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Rise Time tb 17 ns IF = 6 A, dI/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: AP9620AGM-HF-VB
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SO-8 (KiCad packages3D, STEP)
  • 3D model files: ap9620agm-hf-vb-etched.step / ap9620agm-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap9620agm-hf-vb.step / ap9620agm-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 4410395142afb3ff, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF