component
AP9575GH
Public Made by Adomby adom
APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
| Name | Last updated |
|---|---|
| docs | 17d ago |
| viewers | 17d ago |
| ap9575gh-etched.glb | 17d ago |
| ap9575gh-etched.step | 17d ago |
| ap9575gh-hero.glb | 17d ago |
| ap9575gh-hero.overlay.json | 17d ago |
| ap9575gh.glb | 17d ago |
| ap9575gh.kicad_mod | 17d ago |
| ap9575gh.kicad_sym | 17d ago |
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| ap9575gh.step | 17d ago |
| package.json | 17d ago |
| page.json | 17d ago |
| README.md | 17d ago |
AP9575GH
APEC Advanced Power Elec · MOSFETs · TO-252
AP9575GH from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate of the P-channel MOSFET, rated VGS +25 V / -15 V, with gate threshold VGS(th) between -1 V and -3 V at ID = -250 µA. |
| 2 | D | passive | Drain of the P-channel MOSFET, rated BVDSS -60 V minimum (VGS = 0 V, ID = -250 µA) with drain current ID -15 A in the datasheet header. |
| 3 | S | passive | Source of the P-channel MOSFET; the body diode forward voltage VSD is at most -1.2 V at IS = -9 A, VGS = 0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | 25 | V | 1 | |||
| Drain Current, VGS @ 10V (TC=25C) | ID@TC=25℃ | -15 | A | VGS @ 10V, TC=25C | 1 | ||
| Drain Current, VGS @ 10V (TC=100C) | ID@TC=100℃ | -9.5 | A | VGS @ 10V, TC=100C | 1 | ||
| Pulsed Drain Current | IDM | -45 | A | 1 | |||
| Total Power Dissipation (TC=25C) | PD@TC=25℃ | 31.3 | W | TC=25C | 1 | ||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 4 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 110 | ℃/W | 1 | |||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 90 | mΩ | VGS=-10V, ID=-12A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 120 | mΩ | VGS=-4.5V, ID=-9A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -25 | uA | VDS=-48V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS= +25V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 14 | 27 | nC | ID=-9A | 2 | |
| Input Capacitance | Ciss | 1100 | 2660 | pF | VGS=0V | 2 | |
| Forward On Voltage | VSD | -1.2 | V | IS=-9A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
AP9575GH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap9575gh-etched.step/ap9575gh-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap9575gh.step/ap9575gh.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (7 pp, sha256
04bc954f6cec4c4b, retrieved 2026-10-17, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).