component

AP9575AGH-HF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorap9575agh-hf-vbfactory-2.0.0extractor-text
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ap9575agh-hf-vb / README.md
History Download
Ray Publish 0.1.0 d5b75c0 8d ago

AP9575AGH-HF-VB

VBsemi Elec · MOSFETs · TO-252

AP9575AGH-HF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage limit is ±20 V and threshold is -1 to -3 V at ID = -250 µA.
2 D passive Drain, also connected to the tab; drain-source voltage rating is -60 V and pulsed drain current is -100 A.
3 S passive Source of the P-channel MOSFET; body diode continuous current is -20 A.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -60 V VGS = 0 V, ID = - 250 µA 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = - 60 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -125 µA VDS = - 60 V, VGS = 0 V, TJ = 150 °C 2
Total Gate Charge Qg 26 40 nC VDS = - 30 V, VGS = - 10 V, ID = - 10 A 2
Turn-On Delay Time td(on) 8 15 ns VDD = - 30 V, RL = 3 Ω, VGEN = - 10 V, Rg = 2.5 Ω 2
Rise Time tr 9 15 ns VDD = - 30 V, RL = 3 Ω, VGEN = - 10 V, Rg = 2.5 Ω 2
Turn-Off Delay Time td(off) 65 100 ns VDD = - 30 V, RL = 3 Ω, VGEN = - 10 V, Rg = 2.5 Ω 2
Fall Time tf 30 45 ns VDD = - 30 V, RL = 3 Ω, VGEN = - 10 V, Rg = 2.5 Ω 2
Body Diode Forward Voltage VSD -1 -1.5 V IF = - 19 A, VGS = 0 V 2
Reverse Recovery Time trr 41 61 ns IF = - 19 A, di/dt = 100 A/µs 2
Forward Transconductance gfs 22 S VDS = - 15 V, ID = - 10 A 2
Gate Resistance Rg 7 Ω f = 1 MHz 2
Gate-Source Charge Qgs 4.5 nC VDS = - 30 V, VGS = - 10 V, ID = - 10 A 2
Gate-Drain Charge Qgd 7 nC VDS = - 30 V, VGS = - 10 V, ID = - 10 A 2
Drain-Source Voltage VDS -60 V TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V TA = 25 °C 1
Pulsed Drain Current IDM -100 A TA = 25 °C 1
Avalanche Current, Single Pulse IAS -22 A L = 0.1 mH 1
Repetitive Avalanche Energy, Single Pulse EAS 24.2 mJ L = 0.1 mH 1
Power Dissipation PD 38.5 W TC = 25 °C 1
Power Dissipation PD 2.3 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 17 21 °C/W t ≤ 10 s 1
Maximum Junction-to-Ambient RthJA 45 55 °C/W Steady State 1
Maximum Junction-to-Case RthJC 2.7 3.25 °C/W 1

CAD (KiCad official)

  • Symbol: AP9575AGH-HF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap9575agh-hf-vb-etched.step / ap9575agh-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap9575agh-hf-vb.step / ap9575agh-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 0a8b95e93dc4643f, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF