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AP94T07GH
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APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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ap94t07gh: specified limits as data (metadata.characteristics, 20 rows from the datasheet)
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AP94T07GH
APEC Advanced Power Elec · MOSFETs · TO-252
AP94T07GH from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet gives Gate-Source Voltage as +20 V, with Gate-Source Leakage of ±100 nA maximum at VGS=+20 V, VDS=0 V and Gate Threshold Voltage of 2 V min to 5 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for Drain-Source Voltage of 75 V and continuous Drain Current of 75 A at TC=25 ℃ (package limited to 75 A), with pulsed drain current of 300 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the source-drain body diode has a Forward On Voltage of 1.3 V max at IS=40 A, VGS=0 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 75 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 8 | mΩ | VGS=10V, ID=40A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 2 | 5 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 25 | uA | VDS=60V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 58 | 92 | nC | ID=40A | 2 | |
| Input Capacitance | Ciss | 2350 | 3760 | pF | VGS=0V | 2 | |
| Forward On Voltage | VSD | 1.3 | V | IS=40A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 75 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current, VGS @ 10V | ID@Tc=25℃ | 75 | A | 1 | |||
| Drain Current, VGS @ 10V | ID@Tc=100℃ | 58 | A | 1 | |||
| Pulsed Drain Current | IDM | 300 | A | 1 | |||
| Total Power Dissipation | PD@Tc=25℃ | 125 | W | 1 | |||
| Total Power Dissipation | PD@TA=25℃ | 2.4 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 175 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 175 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 1.2 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | 62.5 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 110 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AP94T07GH - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap94t07gh-etched.step/ap94t07gh-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap94t07gh.step/ap94t07gh.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (5 pp, sha256
9ebf1feea803a6ff, retrieved 2026-10-10, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP94T07GH
**APEC Advanced Power Elec** · MOSFETs · TO-252
AP94T07GH from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the N-channel MOSFET; the datasheet gives Gate-Source Voltage as +20 V, with Gate-Source Leakage of ±100 nA maximum at VGS=+20 V, VDS=0 V and Gate Threshold Voltage of 2 V min to 5 V max at VDS=VGS, ID=250 µA. |
| 2 | D | passive | Drain terminal of the N-channel MOSFET, rated for Drain-Source Voltage of 75 V and continuous Drain Current of 75 A at TC=25 ℃ (package limited to 75 A), with pulsed drain current of 300 A. |
| 3 | S | passive | Source terminal of the N-channel MOSFET; the source-drain body diode has a Forward On Voltage of 1.3 V max at IS=40 A, VGS=0 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 75 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 8 | mΩ | VGS=10V, ID=40A | 2 |
| Gate Threshold Voltage | VGS(th) | 2 | | 5 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 25 | uA | VDS=60V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 58 | 92 | nC | ID=40A | 2 |
| Input Capacitance | Ciss | | 2350 | 3760 | pF | VGS=0V | 2 |
| Forward On Voltage | VSD | | | 1.3 | V | IS=40A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | 75 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current, VGS @ 10V | ID@Tc=25℃ | | | 75 | A | | 1 |
| Drain Current, VGS @ 10V | ID@Tc=100℃ | | | 58 | A | | 1 |
| Pulsed Drain Current | IDM | | | 300 | A | | 1 |
| Total Power Dissipation | PD@Tc=25℃ | | | 125 | W | | 1 |
| Total Power Dissipation | PD@TA=25℃ | | | 2.4 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 175 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 175 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c | | | 1.2 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | | | 62.5 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 110 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `AP94T07GH`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ap94t07gh-etched.step` / `ap94t07gh-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap94t07gh.step` / `ap94t07gh.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588915608079097856) (5 pp, sha256 `9ebf1feea803a6ff`, retrieved 2026-10-10, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap94t07gh-datasheet.pdf)