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AP9435GM-HF-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
3D Model
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Symbol & Footprint
Schematic Symbol
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PCB Footprint
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Datasheet
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README
markdownAP9435GM-HF-VB
VBsemi Elec · MOSFETs · SO-8
AP9435GM-HF-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source of the P-channel MOSFET; continuous source (diode) current is rated -2.3 A (10 s) / -1.1 A (steady state). |
| 2 | S | passive | Source of the P-channel MOSFET, internally common with the other source pins. |
| 3 | S | passive | Source of the P-channel MOSFET, internally common with the other source pins. |
| 4 | G | input | Gate of the P-channel MOSFET; VGS rated ±20 V with threshold of -0.7 to -2.0 V at ID = -250 µA. |
| 5 | D | passive | Drain of the P-channel MOSFET; VDS rated -30 V and pulsed drain current -30 A. |
| 6 | D | passive | Drain of the P-channel MOSFET, internally common with the other drain pins. |
| 7 | D | passive | Drain of the P-channel MOSFET, internally common with the other drain pins. |
| 8 | D | passive | Drain of the P-channel MOSFET, internally common with the other drain pins. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate Threshold Voltage | VGS(th) | -2 | -0.7 | V | VDS = VGS, ID = -250 µA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | -1 | µA | VDS = -30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | -5 | µA | VDS = -30 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | -20 | A | VDS ≤ -10 V, VGS = -10 V | 2 | ||
| On-State Drain Current | ID(on) | -5 | A | VDS ≤ -5 V, VGS = -4.5 V | 2 | ||
| Diode Forward Voltage | VSD | -0.8 | -1.1 | V | IS = -2.3 A, VGS = 0 V | 2 | |
| Turn-On Delay Time | td(on) | 14 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Rise Time | tr | 14 | 25 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Turn-Off Delay Time | td(off) | 42 | 70 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Fall Time | tf | 30 | 50 | ns | VDD = -15 V, RL = 15 Ω, ID ≅ -1 A, VGEN = -10 V, Rg = 6 Ω | 2 | |
| Source-Drain Reverse Recovery Time | trr | 30 | 60 | ns | IF = -1.2 A, dI/dt = 100 A/µs | 2 | |
| Drain-Source On-State Resistance | RDS(on) | 0.033 | Ω | VGS = -10 V, ID = -5.8 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.043 | Ω | VGS = -6 V, ID = -5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.056 | Ω | VGS = -4.5 V, ID = -4.4 A | 2 | ||
| Forward Transconductance | gfs | 13 | S | VDS = -15 V, ID = -5.8 A | 2 | ||
| Total Gate Charge | Qg | 16 | nC | VDS = -15 V, VGS = -10 V, ID = -3.5 A | 2 | ||
| Gate-Source Charge | Qgs | 2.3 | nC | VDS = -15 V, VGS = -10 V, ID = -3.5 A | 2 | ||
| Gate-Drain Charge | Qgd | 4.5 | nC | VDS = -15 V, VGS = -10 V, ID = -3.5 A | 2 | ||
| Gate Resistance | Rg | 8.8 | Ω | 2 | |||
| Drain-Source Voltage | VDS | -30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Continuous Drain Current 10 s | ID | -5.8 | A | TA = 25 °C, TJ = 150 °C, 10 s | 1 | ||
| Continuous Drain Current Steady State | ID | -4.1 | A | TA = 25 °C, TJ = 150 °C, steady state | 1 | ||
| Continuous Drain Current 10 s | ID | -4.6 | A | TA = 70 °C, TJ = 150 °C, 10 s | 1 | ||
| Continuous Drain Current Steady State | ID | -3.2 | A | TA = 70 °C, TJ = 150 °C, steady state | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | TA = 25 °C | 1 | ||
| Continuous Source Current 10 s | IS | -2.3 | A | Diode conduction, 10 s | 1 | ||
| Continuous Source Current Steady State | IS | -1.1 | A | Diode conduction, steady state | 1 | ||
| Maximum Power Dissipation 10 s | PD | 2.5 | W | TA = 25 °C, 10 s | 1 | ||
| Maximum Power Dissipation Steady State | PD | 1.3 | W | TA = 25 °C, steady state | 1 | ||
| Maximum Power Dissipation 10 s | PD | 1.6 | W | TA = 70 °C, 10 s | 1 | ||
| Maximum Power Dissipation Steady State | PD | 0.8 | W | TA = 70 °C, steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance 10 s | RthJA | 40 | 50 | °C/W | t ≤ 10 s | 1 | |
| Junction-to-Ambient Thermal Resistance Steady State | RthJA | 70 | 95 | °C/W | Steady State | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance | RthJF | 24 | 30 | °C/W | Steady State | 1 |
CAD (KiCad official)
- Symbol:
AP9435GM-HF-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ap9435gm-hf-vb-etched.step/ap9435gm-hf-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap9435gm-hf-vb.step/ap9435gm-hf-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
046604aa235a9dfb, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).