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Contents

README

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AP8N8R0H

APEC(Advanced Power Elec) · MOSFETs · TO-252

AP8N8R0H from APEC(Advanced Power Elec), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V with a typical threshold of 2 to 5 V at ID=250uA.
2 D passive Drain (center lead, also the tab); drain-source voltage rated 80 V and continuous current 60 A at TC=25°C.
3 S passive Source; the body diode carries IS=30A with VSD up to 1.3 V.

Key specifications

Parameter Value
Manufacturer APEC(Advanced Power Elec)
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 80 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current ID@TC=25℃ 60 A VGS @ 10V 1
Drain Current ID@TC=100℃ 37.8 A VGS @ 10V 1
Pulsed Drain Current IDM 200 A 1
Total Power Dissipation PD@TC=25℃ 52 W 1
Total Power Dissipation PD@TA=25℃ 2 W 1
Single Pulse Avalanche Energy EAS 45 mJ Starting Tj=25°C, VDD=40V, L=0.1mH, RG=25Ω 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-case Rthj-c 2.4 ℃/W 1
Thermal Resistance, Junction-ambient Rthj-a 62.5 ℃/W PCB mount, 1 in2 copper pad 1
Drain-Source Breakdown Voltage BVDSS 80 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 8 mΩ VGS=10V, ID=30A 2
Gate Threshold Voltage VGS(th) 2 5 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 25 uA VDS=64V, VGS=0V 2
Gate-Source Leakage IGSS -100 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 42 67.2 nC ID=30A, VDS=40V, VGS=10V 2
Input Capacitance Ciss 2450 3920 pF VGS=0V, VDS=40V, f=1.0MHz 2
Gate Resistance Rg 1 2 Ω f=1.0MHz 2
Forward On Voltage VSD 1.3 V IS=30A, VGS=0V 2
Forward Transconductance gfs 46 S VDS=10V, ID=30A 2
Gate-Source Charge Qgs 13 nC ID=30A, VDS=40V, VGS=10V 2
Gate-Drain (Miller) Charge Qgd 11.5 nC ID=30A, VDS=40V, VGS=10V 2
Turn-on Delay Time td(on) 15 ns VDS=40V, ID=30A, RG=6Ω, VGS=10V 2
Rise Time tr 58 ns VDS=40V, ID=30A, RG=6Ω, VGS=10V 2
Turn-off Delay Time td(off) 28 ns VDS=40V, ID=30A, RG=6Ω, VGS=10V 2
Fall Time tf 63 ns VDS=40V, ID=30A, RG=6Ω, VGS=10V 2
Output Capacitance Coss 930 pF VGS=0V, VDS=40V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 35 pF VGS=0V, VDS=40V, f=1.0MHz 2
Reverse Recovery Time trr 37 ns IS=30A, VGS=0V, dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 28 nC IS=30A, VGS=0V, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AP8N8R0H
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap8n8r0h-etched.step / ap8n8r0h-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap8n8r0h.step / ap8n8r0h.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC(Advanced Power Elec) datasheet (6 pp, sha256 6d023f82647d803d, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF