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AP8012HNEC-T1L

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Wuxi Chipown Micro electronics AC-DC Controllers And Regulators, DIP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP8012HNEC-T1L

Wuxi Chipown Micro electronics · AC-DC Controllers And Regulators · DIP-8

AP8012HNEC-T1L from Wuxi Chipown Micro electronics, in a DIP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 GND power_in Reference ground for the power MOSFET and control circuitry.
2 GND power_in Reference ground for the power MOSFET and control circuitry (also tied to pin 1 in DIP-8).
3 COMP input Feedback input that sets the power MOSFET peak current: the current flowing into COMP is sampled through R2 and compared with an internal reference, with the COMP pin rated -0.3 to 7 V.
4 VDD power_in Supply pin for the control circuit, charged by the internal high-voltage start-up device until the UVLO start voltage VSTART (13 to 16 V, 14.5 V typical) is reached; the operating range is 10 to 35 V and the pin is rated -0.3 to 45 V.
5 NC unconnected No connection on the DIP-8 package; the datasheet notes this pin can be connected to SW.
6 SW output Drain of the internal power MOSFET and the high-voltage start-up current input, rated -0.3 to 750 V with a minimum BVDSS of 750 V and a drain pulse current of 2 A (Tpulse = 100 µs).
7 SW output Drain of the internal power MOSFET and the high-voltage start-up current input, rated -0.3 to 750 V with a minimum BVDSS of 750 V and a drain pulse current of 2 A (Tpulse = 100 µs).
8 SW output Drain of the internal power MOSFET and the high-voltage start-up current input, rated -0.3 to 750 V with a minimum BVDSS of 750 V and a drain pulse current of 2 A (Tpulse = 100 µs).

Key specifications

Parameter Value
Manufacturer Wuxi Chipown Micro electronics
Package DIP-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
VDD pin withstand voltage -0.3 45 V 2
SW pin withstand voltage -0.3 750 V 2
COMP pin withstand voltage -0.3 7 V 2
Junction operating temperature range -40 150 °C 2
Storage temperature range -55 150 °C 2
Drain pulse current 2 A Tpulse=100us 2
Human body model ESD -4 4 kV HBM, ESDA/JEDEC JDS-001-2014 2
Air discharge ESD 8 kV Air mode, direct discharge on chip pins 2
VDD operating voltage range 10 35 V After turn-on 4
Input AC voltage (typical power table, DIP-8) 85 265 VAC Typical power table, DIP-8 package 2
Undervoltage start voltage VSTART 13 14.5 16 V VCOMP=0V 3
Undervoltage stop voltage VSTOP 7 8 9 V VCOMP=0V 3
VDD restart voltage VRST 5.5 6 6.5 V 3
VDD overvoltage protection VOVP 37 40 43 V 4
Switching frequency FOSC 40 45 50 kHz TA = 25°C 3
Frequency dither range FD -5 5 kHz 3
Maximum duty cycle DMAX 65 80 90 % 3
Peak current limit ILIM 0.44 0.55 0.66 A TA = 25°C 3
Power MOSFET breakdown voltage BVDSS 750 820 V ISW =250uA 3
Overtemperature protection temperature TSD 140 170 °C 4
VDD quiescent current in UVLO (IDD_OFF) IDD_OFF 100 400 uA VDD = 6V 4
Leakage current, off state IOFF 100 uA VSW =550V 3
Operating current (AP8012H(L)) IDD 0.6 mA VDD = 16 V, VCOMP= 0V 4
Start-up charge current (SW pin) ICH -1.2 mA VDRAIN = 105 V, VCOMP = GND, VDD = 12 V 4
UVLO hysteresis VHYS 6.5 V 3
Power MOSFET on-resistance RDSON 18 Ω ISW = 400mA, TJ =25°C 3
COMP shutdown current ICOMP 1.2 mA 3
COMP pin input impedance RCOMP 1.15 kΩ 3
Minimum on-time (leading-edge blanking) TLEB 350 ns LEB time 3
Soft-start time tSS 10 ms 3
Burst-mode operating current ID_BM 100 mA 3
Modulation frequency FM 167 Hz 3
Overtemperature protection hysteresis THYST 30 °C 4
Thermal resistance junction-to-case, DIP-8 RθJC 40 °C/W 2

CAD (KiCad official)

  • Symbol: AP8012HNEC-T1L
  • Footprint: Package_DIP:DIP-8_W7.62mm
  • 3D model: DIP-8 (KiCad packages3D, STEP)
  • 3D model files: ap8012hnec-t1l-etched.step / ap8012hnec-t1l-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap8012hnec-t1l.step / ap8012hnec-t1l.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Wuxi Chipown Micro electronics datasheet (10 pp, sha256 7bb31ece8461ebe1, retrieved 2026-10-15, tier: lcsc)
  • Datasheet language: Chinese. Pin names, descriptions, and specs on this page were extracted and translated to English by ds2sf; the linked PDF is the manufacturer original.
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF