component
AP6P025M
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APEC Advanced Power Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP6P025M
APEC Advanced Power Elec · MOSFETs · SO-8
AP6P025M from APEC Advanced Power Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and gate-source voltage is ±20V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and gate-source voltage is ±20V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and gate-source voltage is ±20V. |
| 4 | G | input | Gate terminal; the datasheet's absolute maximum gate-source voltage is ±20V and the gate threshold is -1V to -3V at ID=-250uA. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current, VGS @ 10V | ID | -7.3 | A | TA=25℃ | 1 | ||
| Drain Current, VGS @ 10V | ID | -5.8 | A | TA=70℃ | 1 | ||
| Pulsed Drain Current | IDM | -30 | A | 1 | |||
| Total Power Dissipation | PD | 2.5 | W | TA=25℃ | 1 | ||
| Single Pulse Avalanche Energy | EAS | 16.2 | mJ | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 50 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board, t < 10s | 1 | ||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 125 | ℃/W | Mounted on minimum copper pad | 2 | ||
| Drain-Source Breakdown Voltage | BVDSS | -60 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 25 | mΩ | VGS=-10V, ID=-7A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 30 | mΩ | VGS=-4.5V, ID=-5A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -25 | uA | VDS=-48V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 34 | 54.4 | nC | ID=-7A | 2 | |
| Gate Resistance | Rg | 5 | 10 | Ω | f=1.0MHz | 2 | |
| Input Capacitance | Ciss | 4000 | 6400 | pF | VGS=0V | 2 | |
| Forward On Voltage | VSD | -1.3 | V | IS=-1.9A, VGS=0V | 2 |
CAD (KiCad official)
- Symbol:
AP6P025M - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ap6p025m-etched.step/ap6p025m-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap6p025m.step/ap6p025m.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (8 pp, sha256
cf315b94c725ad06, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP6P025M
**APEC Advanced Power Elec** · MOSFETs · SO-8
AP6P025M from APEC Advanced Power Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and gate-source voltage is ±20V. |
| 2 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and gate-source voltage is ±20V. |
| 3 | S | passive | Source terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and gate-source voltage is ±20V. |
| 4 | G | input | Gate terminal; the datasheet's absolute maximum gate-source voltage is ±20V and the gate threshold is -1V to -3V at ID=-250uA. |
| 5 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
| 6 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
| 7 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
| 8 | D | passive | Drain terminal of the P-channel MOSFET; the datasheet's absolute maximum drain-source voltage is -60V and continuous drain current is -7.3A at TA=25°C. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | SO-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -60 | | | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current, VGS @ 10V | ID | -7.3 | | | A | TA=25℃ | 1 |
| Drain Current, VGS @ 10V | ID | -5.8 | | | A | TA=70℃ | 1 |
| Pulsed Drain Current | IDM | -30 | | | A | | 1 |
| Total Power Dissipation | PD | | | 2.5 | W | TA=25℃ | 1 |
| Single Pulse Avalanche Energy | EAS | | | 16.2 | mJ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 50 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board, t < 10s | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 125 | ℃/W | Mounted on minimum copper pad | 2 |
| Drain-Source Breakdown Voltage | BVDSS | -60 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 25 | mΩ | VGS=-10V, ID=-7A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 30 | mΩ | VGS=-4.5V, ID=-5A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -25 | uA | VDS=-48V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 34 | 54.4 | nC | ID=-7A | 2 |
| Gate Resistance | Rg | | 5 | 10 | Ω | f=1.0MHz | 2 |
| Input Capacitance | Ciss | | 4000 | 6400 | pF | VGS=0V | 2 |
| Forward On Voltage | VSD | | | -1.3 | V | IS=-1.9A, VGS=0V | 2 |
## CAD (KiCad official)
- Symbol: `AP6P025M`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `ap6p025m-etched.step` / `ap6p025m-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap6p025m.step` / `ap6p025m.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8589835017150238720) (8 pp, sha256 `cf315b94c725ad06`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap6p025m-datasheet.pdf)