component
AP6800GEO-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TSSOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
Generated by kicad-footprint-generator · KiCad file format 20260206
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AP6800GEO-VB
VBsemi Elec · MOSFETs · TSSOP-8
AP6800GEO-VB from VBsemi Elec, in a TSSOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | D | passive | Drain, common to both MOSFETs (pins 1 and 8 are the shared drain), rated VDS 25 V. |
| 2 | S1 | passive | Source of MOSFET 1; continuous drain current 6.6 A (10 s) / 5.2 A steady state at TA = 25 °C. |
| 3 | S1 | passive | Source of MOSFET 1, second source pin tied to pin 2. |
| 4 | G1 | input | Gate of MOSFET 1, maximum VGS ±12 V with threshold 0.5 V min to 1.0 V max. |
| 5 | G2 | input | Gate of MOSFET 2, maximum VGS ±12 V with threshold 0.5 V min to 1.0 V max. |
| 6 | S2 | passive | Source of MOSFET 2, second source pin tied to pin 7. |
| 7 | S2 | passive | Source of MOSFET 2; continuous drain current 6.6 A (10 s) / 5.2 A steady state at TA = 25 °C. |
| 8 | D | passive | Drain, common to both MOSFETs (pins 1 and 8 are the shared drain), rated VDS 25 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TSSOP-8 |
| Category | Transistors/Thyristors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | 25 | V | TA = 25 °C, unless otherwise noted | 1 | ||
| Gate-Source Voltage | VGS | -12 | 12 | V | TA = 25 °C, unless otherwise noted | 1 | |
| Continuous Drain Current (10 s) | ID | 6.6 | A | TJ = 150 °C; TA = 25 °C; t ≤ 10 s | 1 | ||
| Continuous Drain Current (steady state) | ID | 5.2 | A | TJ = 150 °C; TA = 25 °C; steady state | 1 | ||
| Continuous Drain Current (10 s) | ID | 5.5 | A | TJ = 150 °C; TA = 70 °C; t ≤ 10 s | 1 | ||
| Continuous Drain Current (steady state) | ID | 3.5 | A | TJ = 150 °C; TA = 70 °C; steady state | 1 | ||
| Pulsed Drain Current | IDM | 30 | A | TA = 25 °C, unless otherwise noted | 1 | ||
| Continuous Source Current (Diode Conduction) (10 s) | IS | 1.5 | A | TA = 25 °C; t ≤ 10 s | 1 | ||
| Continuous Source Current (Diode Conduction) (steady state) | IS | 1 | A | TA = 25 °C; steady state | 1 | ||
| Maximum Power Dissipation (10 s) | PD | 1.5 | W | TA = 25 °C; t ≤ 10 s | 1 | ||
| Maximum Power Dissipation (steady state) | PD | 1 | W | TA = 25 °C; steady state | 1 | ||
| Maximum Power Dissipation (10 s) | PD | 0.96 | W | TA = 70 °C; t ≤ 10 s | 1 | ||
| Maximum Power Dissipation (steady state) | PD | 0.64 | W | TA = 70 °C; steady state | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | Operating junction and storage temperature range | 1 | |
| Maximum Junction-to-Ambient (10 s) | RthJA | 72 | 83 | °C/W | Maximum junction-to-ambient; t ≤ 10 s | 1 | |
| Maximum Junction-to-Ambient (steady state) | RthJA | 100 | 120 | °C/W | Maximum junction-to-ambient; steady state | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 55 | 70 | °C/W | Maximum junction-to-foot (drain); steady state | 1 | |
| Gate Threshold Voltage | VGS(th) | 0.5 | 1 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Body Leakage | IGSS | -200 | 200 | nA | VDS = 0 V, VGS = ± 4.5 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 25 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 25 | µA | VDS = 25 V, VGS = 0 V, TJ = 70 °C | 2 | ||
| On-State Drain Current | ID(on) | 30 | A | VDS ≤ 5 V, VGS = 4.5 V | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.022 | Ω | VGS = 4.5 V, ID = 6.5 A | 2 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.032 | Ω | VGS = 2.5 V, ID = 5.5 A | 2 | ||
| Diode Forward Voltage | VSD | 0.71 | 1.2 | V | IS = 1.5 A, VGS = 0 V | 2 | |
| Total Gate Charge | Qg | 12 | 18 | nC | VDS = 10 V, VGS = 4.5 V, ID = 6.5 A | 2 | |
| Turn-On Delay Time | td(on) | 245 | 365 | ns | VDD = 10 V, RL = 10 Ω, ID ≅ 1 A, VGEN = 4.5 V, RG = 6 Ω | 2 | |
| Rise Time | tr | 330 | 495 | ns | 2 | ||
| Turn-Off Delay Time | td(off) | 860 | 1300 | ns | 2 | ||
| Fall Time | tf | 510 | 765 | ns | 2 | ||
| Forward Transconductance | gfs | 30 | S | VDS = 10 V, ID = 6.5 A | 2 | ||
| Gate-Source Charge | Qgs | 2.2 | nC | 2 | |||
| Gate-Drain Charge | Qgd | 3.6 | nC | 2 |
CAD (KiCad official)
- Symbol:
AP6800GEO-VB - Footprint:
Package_SO:TSSOP-8_4.4x3mm_P0.65mm - 3D model: TSSOP-8 (KiCad packages3D, STEP)
- 3D model files:
ap6800geo-vb-etched.step/ap6800geo-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap6800geo-vb.step/ap6800geo-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (8 pp, sha256
6ab07d60b3d6dee5, retrieved 2026-11-05, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).