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AP6679GH-HF
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APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP6679GH-HF
APEC Advanced Power Elec · MOSFETs · TO-252
AP6679GH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage rating is +20 V. |
| 2 | D | passive | Drain terminal; the drain-source voltage rating is -30 V and the package-limited continuous drain current is -75 A at TC=25°C. |
| 3 | S | passive | Source terminal, the reference for VGS and the source-drain diode; the datasheet gives no separate pin-specific limit. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | V | VGS=0V, ID=-250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 9 | mΩ | VGS=-10V, ID=-30A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 15 | mΩ | VGS=-4.5V, ID=-24A | 2 | ||
| Gate Threshold Voltage | VGS(th) | -1 | -3 | V | VDS=VGS, ID=-250uA | 2 | |
| Drain-Source Leakage Current | IDSS | -1 | uA | VDS=-30V, VGS=0V | 2 | ||
| Drain-Source Leakage Current | IDSS | -250 | uA | Tj=125°C; VDS=-24V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 42 | 67 | nC | ID=-16A | 2 | |
| Input Capacitance | Ciss | 2870 | 4590 | pF | VGS=0V | 2 | |
| Forward On Voltage | VSD | -1.2 | V | IS=-24A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | -30 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Continuous Drain Current | ID@TC=25℃ | -75 | A | TC=25℃ | 1 | ||
| Continuous Drain Current | ID@TC=100℃ | -50 | A | TC=100℃ | 1 | ||
| Pulsed Drain Current | IDM | -300 | A | 1 | |||
| Total Power Dissipation | PD@TC=25℃ | 89 | W | TC=25℃ | 1 | ||
| Linear Derating Factor | 0.71 | W/℃ | 1 | ||||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 1.4 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 62.5 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | 110 | ℃/W | 1 |
CAD (KiCad official)
- Symbol:
AP6679GH-HF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap6679gh-hf-etched.step/ap6679gh-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap6679gh-hf.step/ap6679gh-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (6 pp, sha256
35a1381e1d017059, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP6679GH-HF
**APEC Advanced Power Elec** · MOSFETs · TO-252
AP6679GH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal of the P-channel MOSFET; the absolute maximum gate-source voltage rating is +20 V. |
| 2 | D | passive | Drain terminal; the drain-source voltage rating is -30 V and the package-limited continuous drain current is -75 A at TC=25°C. |
| 3 | S | passive | Source terminal, the reference for VGS and the source-drain diode; the datasheet gives no separate pin-specific limit. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -30 | | | V | VGS=0V, ID=-250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 9 | mΩ | VGS=-10V, ID=-30A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 15 | mΩ | VGS=-4.5V, ID=-24A | 2 |
| Gate Threshold Voltage | VGS(th) | -1 | | -3 | V | VDS=VGS, ID=-250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | -1 | uA | VDS=-30V, VGS=0V | 2 |
| Drain-Source Leakage Current | IDSS | | | -250 | uA | Tj=125°C; VDS=-24V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 42 | 67 | nC | ID=-16A | 2 |
| Input Capacitance | Ciss | | 2870 | 4590 | pF | VGS=0V | 2 |
| Forward On Voltage | VSD | | | -1.2 | V | IS=-24A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | -30 | | | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Continuous Drain Current | ID@TC=25℃ | -75 | | | A | TC=25℃ | 1 |
| Continuous Drain Current | ID@TC=100℃ | -50 | | | A | TC=100℃ | 1 |
| Pulsed Drain Current | IDM | -300 | | | A | | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 89 | W | TC=25℃ | 1 |
| Linear Derating Factor | | | 0.71 | | W/℃ | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c | | | 1.4 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 62.5 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient | Rthj-a | | | 110 | ℃/W | | 1 |
## CAD (KiCad official)
- Symbol: `AP6679GH-HF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ap6679gh-hf-etched.step` / `ap6679gh-hf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap6679gh-hf.step` / `ap6679gh-hf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8586202898870489088) (6 pp, sha256 `35a1381e1d017059`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap6679gh-hf-datasheet.pdf)