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AP55T10GH-HF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP55T10GH-HF-VB

VBsemi Elec · MOSFETs · TO-252

AP55T10GH-HF-VB from VBsemi Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±20 V, with threshold VGS(th) of 2.5 V min to 5 V max at ID = 250 µA.
2 D passive Drain (center pin, also tied to the tab); drain-source voltage up to 100 V and continuous current 45 A (package limited) at TC = 25 °C.
3 S passive Source; continuous source-drain diode current 45 A (package limited) at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Gate-Source Threshold Voltage VGS(th) 2.5 5 V VDS = VGS, ID = 250 µA 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (TJ = 125 °C) IDSS 50 µA VDS = 100 V, VGS = 0 V, TJ = 125 °C 2
Drain-Source Breakdown Voltage VDS 100 V VGS = 0 V, ID = 250 µA 2
On-State Drain Current ID(on) 30 A VDS 5 V, VGS = 10 V 2
Gate Resistance Rg 1.6 2.5 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 12 20 ns VDD = 50 V, RL = 1 Ω, ID 50 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 10 20 ns VDD = 50 V, RL = 1 Ω, ID 50 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 18 35 ns VDD = 50 V, RL = 1 Ω, ID 50 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 8 15 ns VDD = 50 V, RL = 1 Ω, ID 50 A, VGEN = 10 V, Rg = 1 Ω 2
Body Diode Voltage VSD 0.85 1.5 V IS = 15 A 2
Body Diode Reverse Recovery Time trr 80 120 ns IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 160 240 nC IF = 50 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS 100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 9.2 A TA = 25 °C 1
Continuous Drain Current ID 6.8 A TA = 100 °C 1
Maximum Power Dissipation PD 136.4 W TC = 25 °C 1
Maximum Power Dissipation PD 68.2 W TC = 100 °C 1
Maximum Power Dissipation PD 3 W TA = 25 °C 1
Maximum Power Dissipation PD 1.5 W TA = 100 °C 1
Avalanche Energy EAS 101 mJ 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient RthJA 40 50 °C/W Steady State 1
Maximum Junction-to-Case RthJC 0.85 1.1 °C/W 1

CAD (KiCad official)

  • Symbol: AP55T10GH-HF-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap55t10gh-hf-vb-etched.step / ap55t10gh-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap55t10gh-hf-vb.step / ap55t10gh-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 8a15612fc2c9f906, retrieved 2026-10-26, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF