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AP4846

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ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOP-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP4846

ALLPOWER ShenZhen Quan Li Semiconductor · MOSFETs · SOP-8

AP4846 from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOP-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S2 passive Source of MOSFET 2 (N-channel, 60V, 7A rated device).
2 G2 input Gate of MOSFET 2; VGS absolute maximum is ±20V.
3 S1 passive Source of MOSFET 1 (N-channel, 60V, 7A rated device).
4 G1 input Gate of MOSFET 1; VGS absolute maximum is ±20V.
5 D1 passive Drain of MOSFET 1; VDS absolute maximum is 60V.
6 D1 passive Drain of MOSFET 1, tied with pin 5; VDS absolute maximum is 60V.
7 D2 passive Drain of MOSFET 2; VDS absolute maximum is 60V.
8 D2 passive Drain of MOSFET 2, tied with pin 7; VDS absolute maximum is 60V.

Key specifications

Parameter Value
Manufacturer ALLPOWER ShenZhen Quan Li Semiconductor
Package SOP-8
Category Transistors/Thyristors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-source breakdown voltage V(BR)DSS 60 V VGS = 0V, ID = 250µA 2
Gate threshold voltage VGS(th) 1 1.6 2.5 V VDS = VGS, ID = 250µA 2
Zero gate voltage drain current IDSS 1 µA VDS = 60V, VGS = 0V 2
Gate-body leakage current IGSS -100 100 nA VGS = ±20V, VDS = 0V 2
Drain-source on-resistance RDS(on) 15 20 mΩ VGS = 10V, ID = 7A 2
Drain-source on-resistance RDS(on) 19 25 mΩ VGS = 4.5V, ID = 5A 2
Diode forward voltage VDS 1.2 V VGS = 0V, IS = 5A 2
Diode forward current IS 7 A 2
Reverse recovery time Trr 21 ns Is = 7A, VGS = 0V, dIF/dt = 100A/us 2
Reverse recovery charge Qrr 18 nC Is = 7A, VGS = 0V, dIF/dt = 100A/us 2
Drain-source voltage VDS 60 V 1
Gate-source voltage VGS -20 20 V 1
Continuous drain current ID 7 A Ta = 25℃ 1
Continuous drain current ID 5.4 A Ta = 100℃ 1
Pulsed drain current IDM 28 A 1
Power dissipation PD 2 W 1
Junction temperature TJ 150 ℃ 1
Storage temperature TSTG -55 150 ℃ 1
Thermal resistance from junction to ambient RθJA 62.5 ℃/W 1
Input capacitance Ciss 2600 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Output capacitance Coss 125 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Reverse transfer capacitance Crss 105 pF VDS = 25V, VGS = 0V, f = 1MHz 2
Turn-on delay time td(on) 4 ns VDD = 30V, ID = 7A, VGS = 10V, RG = 6Ω 2
Turn-on rise time tr 8 ns VDD = 30V, ID = 7A, VGS = 10V, RG = 6Ω 2
Turn-off delay time td(off) 27 ns VDD = 30V, ID = 7A, VGS = 10V, RG = 6Ω 2
Turn-off fall time tf 20 ns VDD = 30V, ID = 7A, VGS = 10V, RG = 6Ω 2
Total gate charge Qg 51 nC VDS = 30V, ID = 7A, VGS = 10V 2
Gate-source charge Qgs 8 nC VDS = 30V, ID = 7A, VGS = 10V 2
Gate-drain charge Qgd 8 nC VDS = 30V, ID = 7A, VGS = 10V 2

CAD (KiCad official)

  • Symbol: AP4846
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOP-8 (KiCad packages3D, STEP)
  • 3D model files: ap4846-etched.step / ap4846-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4846.step / ap4846.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALLPOWER ShenZhen Quan Li Semiconductor datasheet (8 pp, sha256 8767c0db70d231c9, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF