component
AP4565GM&-30-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP4565GM&-30-VB
VBsemi Elec · MOSFETs · SO-8
AP4565GM&-30-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 30 V, RDS(on) 0.018 Ω at VGS = 10 V). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS rated ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, -30 V, RDS(on) 0.040 Ω at VGS = -10 V). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS rated ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS -30 V, pulsed drain current 40 A; tied to pins 5 and 6. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS -30 V, pulsed drain current 40 A; tied to pins 5 and 6. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS 30 V, pulsed drain current 40 A; tied to pins 7 and 8. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS 30 V, pulsed drain current 40 A; tied to pins 7 and 8. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | 30 | V | TA = 25 °C, N-Channel | 1 | ||
| Drain-Source Voltage (P-Ch) | VDS | -30 | V | TA = 25 °C, P-Channel | 1 | ||
| Gate-Source Voltage (N-Ch) | VGS | -20 | 20 | V | N-Channel | 1 | |
| Gate-Source Voltage (P-Ch) | VGS | -20 | 20 | V | P-Channel | 1 | |
| Continuous Drain Current (N-Ch) | ID | 8 | A | TJ = 150 °C, TC = 25 °C, N-Channel | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -8 | A | TJ = 150 °C, TC = 25 °C, P-Channel | 1 | ||
| Continuous Drain Current (N-Ch) | ID | 6.8 | A | TJ = 150 °C, TC = 70 °C, N-Channel | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -6.8 | A | TJ = 150 °C, TC = 70 °C, P-Channel | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -6.6 | A | TA = 25 °C, P-Channel, notes b, c | 1 | ||
| Continuous Drain Current (N-Ch) | ID | 5.4 | A | TA = 70 °C, N-Channel, notes b, c | 1 | ||
| Continuous Drain Current (P-Ch) | ID | -5.3 | A | TA = 70 °C, P-Channel, notes b, c | 1 | ||
| Pulsed Drain Current (N-Ch) | IDM | 40 | A | 10 µs pulse width, N-Channel | 1 | ||
| Pulsed Drain Current (P-Ch) | IDM | -40 | A | 10 µs pulse width, P-Channel | 1 | ||
| Source-Drain Diode Current (N-Ch) | IS | 2.6 | A | TC = 25 °C, N-Channel | 1 | ||
| Source-Drain Diode Current (P-Ch) | IS | -2.6 | A | TC = 25 °C, P-Channel | 1 | ||
| Pulsed Source-Drain Current (N-Ch) | ISM | 40 | A | N-Channel | 1 | ||
| Pulsed Source-Drain Current (P-Ch) | ISM | -40 | A | P-Channel | 1 | ||
| Maximum Power Dissipation (N-Ch) | PD | 2 | W | TA = 25 °C, N-Channel, notes b, c | 1 | ||
| Maximum Power Dissipation (P-Ch) | PD | 2 | W | TA = 25 °C, P-Channel, notes b, c | 1 | ||
| Maximum Power Dissipation (N-Ch) | PD | 1.28 | W | TA = 70 °C, N-Channel, notes b, c | 1 | ||
| Maximum Power Dissipation (P-Ch) | PD | 1.28 | W | TA = 70 °C, P-Channel, notes b, c | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Junction-to-Ambient Thermal Resistance (N-Ch) | RthJA | 50 | 62.5 | °C/W | t ≤ 10 s, N-Channel | 1 | |
| Junction-to-Ambient Thermal Resistance (P-Ch) | RthJA | 47 | 62.5 | °C/W | t ≤ 10 s, P-Channel | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance (N-Ch) | RthJF | 30 | 40 | °C/W | Steady State, N-Channel | 1 | |
| Junction-to-Foot (Drain) Thermal Resistance (P-Ch) | RthJF | 29 | 38 | °C/W | Steady State, P-Channel | 1 | |
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 30 | V | VGS = 0 V, ID = 250 µA, N-Channel | 2 | ||
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -30 | V | VGS = 0 V, ID = - 250 µA, P-Channel | 2 | ||
| Gate-Body Leakage (N-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-Channel | 2 | |
| Gate-Body Leakage (P-Ch) | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-Channel | 2 | |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V, N-Channel | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -1 | µA | VDS = - 30 V, VGS = 0 V, P-Channel | 2 | ||
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Channel | 2 | ||
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Channel | 2 | ||
| On-State Drain Current (N-Ch) | ID(on) | 20 | A | VDS = 5 V, VGS = 10 V, N-Channel | 2 | ||
| On-State Drain Current (P-Ch) | ID(on) | -20 | A | VDS = - 5 V, VGS = - 10 V, P-Channel | 2 | ||
| Continuous Source-Drain Diode Current (N-Ch) | IS | 2.6 | A | TC = 25 °C, N-Channel | 3 | ||
| Continuous Source-Drain Diode Current (P-Ch) | IS | -2.6 | A | TC = 25 °C, P-Channel | 3 | ||
| Body Diode Voltage (N-Ch) | VSD | 0.81 | 1.2 | V | IS = 5.4 A, N-Channel | 3 | |
| Body Diode Voltage (P-Ch) | VSD | -0.77 | -1.2 | V | IS = - 2 A, P-Channel | 3 | |
| Forward Transconductance (N-Ch) | gfs | 27 | S | VDS = 15 V, ID = 6.8 A, N-Channel | 2 | ||
| Forward Transconductance (P-Ch) | gfs | 25 | S | VDS = - 15 V, ID = - 6.7 A, P-Channel | 2 |
CAD (KiCad official)
- Symbol:
AP4565GM&-30-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ap4565gm-30-vb-etched.step/ap4565gm-30-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap4565gm-30-vb.step/ap4565gm-30-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (14 pp, sha256
2c7a62979f94141c, retrieved 2026-10-23, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP4565GM&-30-VB
**VBsemi Elec** · MOSFETs · SO-8
AP4565GM&-30-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of MOSFET 1 (N-channel, 30 V, RDS(on) 0.018 Ω at VGS = 10 V). |
| 2 | G1 | input | Gate of MOSFET 1 (N-channel), VGS rated ±20 V. |
| 3 | S2 | passive | Source of MOSFET 2 (P-channel, -30 V, RDS(on) 0.040 Ω at VGS = -10 V). |
| 4 | G2 | input | Gate of MOSFET 2 (P-channel), VGS rated ±20 V. |
| 5 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS -30 V, pulsed drain current 40 A; tied to pins 5 and 6. |
| 6 | D2 | passive | Drain of MOSFET 2 (P-channel), VDS -30 V, pulsed drain current 40 A; tied to pins 5 and 6. |
| 7 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS 30 V, pulsed drain current 40 A; tied to pins 7 and 8. |
| 8 | D1 | passive | Drain of MOSFET 1 (N-channel), VDS 30 V, pulsed drain current 40 A; tied to pins 7 and 8. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Transistors |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage (N-Ch) | VDS | | | 30 | V | TA = 25 °C, N-Channel | 1 |
| Drain-Source Voltage (P-Ch) | VDS | | | -30 | V | TA = 25 °C, P-Channel | 1 |
| Gate-Source Voltage (N-Ch) | VGS | -20 | | 20 | V | N-Channel | 1 |
| Gate-Source Voltage (P-Ch) | VGS | -20 | | 20 | V | P-Channel | 1 |
| Continuous Drain Current (N-Ch) | ID | | | 8 | A | TJ = 150 °C, TC = 25 °C, N-Channel | 1 |
| Continuous Drain Current (P-Ch) | ID | | | -8 | A | TJ = 150 °C, TC = 25 °C, P-Channel | 1 |
| Continuous Drain Current (N-Ch) | ID | | | 6.8 | A | TJ = 150 °C, TC = 70 °C, N-Channel | 1 |
| Continuous Drain Current (P-Ch) | ID | | | -6.8 | A | TJ = 150 °C, TC = 70 °C, P-Channel | 1 |
| Continuous Drain Current (P-Ch) | ID | | | -6.6 | A | TA = 25 °C, P-Channel, notes b, c | 1 |
| Continuous Drain Current (N-Ch) | ID | | | 5.4 | A | TA = 70 °C, N-Channel, notes b, c | 1 |
| Continuous Drain Current (P-Ch) | ID | | | -5.3 | A | TA = 70 °C, P-Channel, notes b, c | 1 |
| Pulsed Drain Current (N-Ch) | IDM | | | 40 | A | 10 µs pulse width, N-Channel | 1 |
| Pulsed Drain Current (P-Ch) | IDM | | | -40 | A | 10 µs pulse width, P-Channel | 1 |
| Source-Drain Diode Current (N-Ch) | IS | | | 2.6 | A | TC = 25 °C, N-Channel | 1 |
| Source-Drain Diode Current (P-Ch) | IS | | | -2.6 | A | TC = 25 °C, P-Channel | 1 |
| Pulsed Source-Drain Current (N-Ch) | ISM | | | 40 | A | N-Channel | 1 |
| Pulsed Source-Drain Current (P-Ch) | ISM | | | -40 | A | P-Channel | 1 |
| Maximum Power Dissipation (N-Ch) | PD | | | 2 | W | TA = 25 °C, N-Channel, notes b, c | 1 |
| Maximum Power Dissipation (P-Ch) | PD | | | 2 | W | TA = 25 °C, P-Channel, notes b, c | 1 |
| Maximum Power Dissipation (N-Ch) | PD | | | 1.28 | W | TA = 70 °C, N-Channel, notes b, c | 1 |
| Maximum Power Dissipation (P-Ch) | PD | | | 1.28 | W | TA = 70 °C, P-Channel, notes b, c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Junction-to-Ambient Thermal Resistance (N-Ch) | RthJA | | 50 | 62.5 | °C/W | t ≤ 10 s, N-Channel | 1 |
| Junction-to-Ambient Thermal Resistance (P-Ch) | RthJA | | 47 | 62.5 | °C/W | t ≤ 10 s, P-Channel | 1 |
| Junction-to-Foot (Drain) Thermal Resistance (N-Ch) | RthJF | | 30 | 40 | °C/W | Steady State, N-Channel | 1 |
| Junction-to-Foot (Drain) Thermal Resistance (P-Ch) | RthJF | | 29 | 38 | °C/W | Steady State, P-Channel | 1 |
| Drain-Source Breakdown Voltage (N-Ch) | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA, N-Channel | 2 |
| Drain-Source Breakdown Voltage (P-Ch) | VDS | -30 | | | V | VGS = 0 V, ID = - 250 µA, P-Channel | 2 |
| Gate-Body Leakage (N-Ch) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V, N-Channel | 2 |
| Gate-Body Leakage (P-Ch) | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 12 V, P-Channel | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V, N-Channel | 2 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | | | -1 | µA | VDS = - 30 V, VGS = 0 V, P-Channel | 2 |
| Zero Gate Voltage Drain Current (N-Ch) | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C, N-Channel | 2 |
| Zero Gate Voltage Drain Current (P-Ch) | IDSS | | | -10 | µA | VDS = - 30 V, VGS = 0 V, TJ = 55 °C, P-Channel | 2 |
| On-State Drain Current (N-Ch) | ID(on) | 20 | | | A | VDS = 5 V, VGS = 10 V, N-Channel | 2 |
| On-State Drain Current (P-Ch) | ID(on) | -20 | | | A | VDS = - 5 V, VGS = - 10 V, P-Channel | 2 |
| Continuous Source-Drain Diode Current (N-Ch) | IS | | | 2.6 | A | TC = 25 °C, N-Channel | 3 |
| Continuous Source-Drain Diode Current (P-Ch) | IS | | | -2.6 | A | TC = 25 °C, P-Channel | 3 |
| Body Diode Voltage (N-Ch) | VSD | | 0.81 | 1.2 | V | IS = 5.4 A, N-Channel | 3 |
| Body Diode Voltage (P-Ch) | VSD | | -0.77 | -1.2 | V | IS = - 2 A, P-Channel | 3 |
| Forward Transconductance (N-Ch) | gfs | | 27 | | S | VDS = 15 V, ID = 6.8 A, N-Channel | 2 |
| Forward Transconductance (P-Ch) | gfs | | 25 | | S | VDS = - 15 V, ID = - 6.7 A, P-Channel | 2 |
## CAD (KiCad official)
- Symbol: `AP4565GM&-30-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `ap4565gm-30-vb-etched.step` / `ap4565gm-30-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap4565gm-30-vb.step` / `ap4565gm-30-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ap4565gm-30-vb-datasheet.pdf) (14 pp, sha256 `2c7a62979f94141c`, retrieved 2026-10-23, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap4565gm-30-vb-datasheet.pdf)