component

AP4563GH-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsap4563gh-vbfactory-2.0.0extractor-text

Verified AP4563GH-VB

by Ray · last 10 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

10 Nov 2026RayPublished by the parts factory: tier lcsc, 5 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AP4563GH-VB · TO-252-4L · 5 pins
  • ✓copper: 5 copper pads, none touching another net
  • ✓datasheet: all 5 pin names found in the 13-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-252-4
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-zp463360/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • •package_fit (skip): no component.package_dims on the page: the model is unchecked against the datasheet drawing
  • ✓pads: 5 pins = 5 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 5 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 51 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ap4563gh-vb.kicad_sym✓ ap4563gh-vb.kicad_mod✓ ap4563gh-vb.step
Spot something wrong? Report it as an issue Propose a fix Records are signed by members of adom.
Overview Files Discover Packages Releases Dependencies Issues Breadcrumbs Pull Requests Activity
main
ap4563gh-vb / README.md
History Download
Ray Publish 0.1.0 58577b2

AP4563GH-VB

VBsemi Elec · MOSFETs · TO-252-4L

AP4563GH-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (40 V, 50 A rated, RDS(on) 0.014 Ω at VGS = 10 V).
2 G1 input Gate of the N-channel MOSFET, with VGS rated ±20 V.
3 S2 passive Source of the P-channel MOSFET (-40 V, -50 A rated, RDS(on) 0.014 Ω at VGS = -10 V).
4 G2 input Gate of the P-channel MOSFET, with VGS rated ±20 V.
5 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252-4L
Category Transistors/Thyristors
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V N-Channel 1
Drain-Source Voltage VDS -40 V P-Channel 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 50 A TC = 25 °C, N-Channel 1
Continuous Drain Current ID -50 A TC = 25 °C, P-Channel 1
Continuous Drain Current ID 35 A TC = 125 °C, N-Channel 1
Continuous Drain Current ID -35 A TC = 125 °C, P-Channel 1
Continuous Source Current (Diode Conduction) IS 50 A N-Channel 1
Continuous Source Current (Diode Conduction) IS -50 A P-Channel 1
Pulsed Drain Current IDM 150 A N-Channel 1
Pulsed Drain Current IDM -150 A P-Channel 1
Single Pulse Avalanche Current IAS 30 A L = 0.1 mH, N-Channel 1
Single Pulse Avalanche Current IAS -30 A L = 0.1 mH, P-Channel 1
Single Pulse Avalanche Energy EAS 245 mJ N-Channel 1
Maximum Power Dissipation PD 108 W TC = 25 °C 1
Maximum Power Dissipation PD 32 W TC = 125 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Soldering Recommendations (Peak Temperature) 260 °C 1
Junction-to-Ambient PCB Mount RthJA 85 °C/W PCB mount (N and P channel) 1
Junction-to-Case (Drain) RthJC 3.1 °C/W N and P channel 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 μA, N-Ch 2
Drain-Source Breakdown Voltage VDS -40 V VGS = 0 V, ID = -250 μA, P-Ch 2
Gate-Source Threshold Voltage VGS(th) 1 3 V VDS = VGS, ID = 250 μA, N-Ch 2
Gate-Source Threshold Voltage VGS(th) -1 -3 V VDS = VGS, ID = -250 μA, P-Ch 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V, N-Ch 2
Zero Gate Voltage Drain Current IDSS 1 μA VGS = 0 V, VDS = 40 V, N-Ch 2
Zero Gate Voltage Drain Current IDSS -1 μA VGS = 0 V, VDS = -40 V, P-Ch 2
Zero Gate Voltage Drain Current IDSS 50 μA VGS = 0 V, VDS = 40 V, TJ = 125 °C, N-Ch 2
Zero Gate Voltage Drain Current IDSS -50 μA VGS = 0 V, VDS = -40 V, TJ = 125 °C, P-Ch 2
Zero Gate Voltage Drain Current IDSS 150 μA VGS = 0 V, VDS = 40 V, TJ = 175 °C, N-Ch 2
Zero Gate Voltage Drain Current IDSS -150 μA VGS = 0 V, VDS = -40 V, TJ = 175 °C, P-Ch 2
On-State Drain Current ID(on) 25 A VGS = 10 V, VDS 5 V, N-Ch 2
On-State Drain Current ID(on) -25 A VGS = -10 V, VDS 5 V, P-Ch 2
Gate Resistance Rg 2 4.11 6.2 Ω f = 1 MHz, N-Ch 2
Gate Resistance Rg 3.1 6.3 9.5 Ω f = 1 MHz, P-Ch 2
Input Capacitance Ciss 1799 2248 pF VGS = 0 V, VDS = 20 V, f = 1 MHz, N-Ch 2
Input Capacitance Ciss 2000 3500 pF VGS = 0 V, VDS = -20 V, f = 1 MHz, P-Ch 2
Output Capacitance Coss 282 352 pF VGS = 0 V, VDS = 20 V, f = 1 MHz, N-Ch 2
Output Capacitance Coss 320 550 pF VGS = 0 V, VDS = -20 V, f = 1 MHz, P-Ch 2
Reverse Transfer Capacitance Crss 109 136 pF VGS = 0 V, VDS = 20 V, f = 1 MHz, N-Ch 2
Reverse Transfer Capacitance Crss 220 360 pF VGS = 0 V, VDS = -20 V, f = 1 MHz, P-Ch 2
Turn-On Delay Time td(on) 7 11 ns VDD = 20 V, RL = 2, ID = 10 A, VGEN = 10 V, Rg = 1, N-Ch 3
Turn-On Delay Time td(on) 11 17 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1, P-Ch 3
Rise Time tr 21 32 ns VDD = 20 V, RL = 2, ID = 10 A, VGEN = 10 V, Rg = 1, N-Ch 3
Rise Time tr 9 14 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1, P-Ch 3
Turn-Off Delay Time td(off) 33 50 ns VDD = 20 V, RL = 2, ID = 10 A, VGEN = 10 V, Rg = 1, N-Ch 3
Turn-Off Delay Time td(off) 55 83 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1, P-Ch 3
Fall Time tf 19 29 ns VDD = 20 V, RL = 2, ID = 10 A, VGEN = 10 V, Rg = 1, N-Ch 3
Fall Time tf 91 137 ns VDD = -20 V, RL = 2, ID = -10 A, VGEN = -10 V, Rg = 1, P-Ch 3
Pulsed Current ISM 32 A N-Ch 3
Pulsed Current ISM -32 A P-Ch 3
Forward Voltage VSD 0.79 1.2 V IS = 4 A, N-Ch 3
Forward Voltage VSD -0.82 -1.2 V IS = -4 A, P-Ch 3
Total Gate Charge Qg 310 nC VGS = 10 V, VDS = 20 V, ID = 10 A, N-Ch 2
Gate-Source Charge Qgs 5.7 nC VGS = 10 V, VDS = 20 V, ID = 10 A, N-Ch 2
Gate-Source Charge Qgs 5.5 nC VGS = -10 V, VDS = -20 V, ID = -10 A, P-Ch 2
Gate-Drain Charge Qgd 4.8 nC VGS = 10 V, VDS = 20 V, ID = 10 A, N-Ch 2
Gate-Drain Charge Qgd 10.5 nC VGS = -10 V, VDS = -20 V, ID = -10 A, P-Ch 2
Forward Transconductance gfs 40 S VDS = 15 V, ID = 38 A, N-Ch 2
Forward Transconductance gfs 18 S VDS = -15 V, ID = -38 A, P-Ch 2
Drain-Source On-State Resistance RDS(on) 0.014 Ω VGS = 10 V, ID = 38 A, N-Ch 2
Drain-Source On-State Resistance RDS(on) 0.016 Ω VGS = 4.5 V, ID = 30 A, N-Ch 2
Drain-Source On-State Resistance RDS(on) 0.017 Ω VGS = 10 V, ID = 38 A, TJ = 125 °C, N-Ch 2
Drain-Source On-State Resistance RDS(on) 0.025 Ω VGS = 10 V, ID = 38 A, TJ = 175 °C, N-Ch 2

CAD (KiCad official)

  • Symbol: AP4563GH-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4L (KiCad packages3D, STEP)
  • 3D model files: ap4563gh-vb-etched.step / ap4563gh-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4563gh-vb.step / ap4563gh-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (13 pp, sha256 4deeb9fbea142506, retrieved 2026-11-10, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF