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AP4511GH-A-VB

VBsemi Elec · MOSFETs · TO-252-4L

AP4511GH-A-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S1 passive Source of the N-channel MOSFET (VDS 60 V, ID 35 A at TC=25°C).
2 G1 input Gate of the N-channel MOSFET (VGS ±20 V maximum).
3 D1/D2 passive Common drain of the N-channel and P-channel MOSFETs, connected to the tab.
4 S2 passive Source of the P-channel MOSFET (VDS -60 V, ID -20 A at TC=25°C).
5 G2 input Gate of the P-channel MOSFET (VGS ±20 V maximum).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-252-4L
Category Triode/MOS Tube/Transistor
Pins 5

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Gate-Source Threshold Voltage (N-ch) VGS(th) 1 3 V VDS = VGS, ID = 250 uA 2
Gate-Source Threshold Voltage (P-ch) VGS(th) -1 -3 V VDS = VGS, ID = -250 uA 2
Gate-Body Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current (N-ch) IDSS 1 uA VDS = 60 V, VGS = 0 V 2
Zero Gate Voltage Drain Current (P-ch) IDSS -1 uA VDS = -48 V, VGS = 0 V 2
On-State Drain Current (N-ch) ID(on) 45 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-ch) ID(on) -25 A VDS = -5 V, VGS = -10 V 2
Drain-Source On-Resistance (N-ch) rDS(on) 30 mΩ VGS = 10 V, ID = 20 A 2
Drain-Source On-Resistance (N-ch) rDS(on) 33 mΩ VGS = 4.5 V, ID = 16 A 2
Drain-Source On-Resistance (P-ch) rDS(on) 50 mΩ VGS = -10 V, ID = -10 A 2
Drain-Source On-Resistance (P-ch) rDS(on) 60 mΩ VGS = -4.5 V, ID = -8 A 2
Diode Forward Voltage (N-ch) VSD 0.89 V IS = 17 A, VGS = 0 V 2
Diode Forward Voltage (P-ch) VSD -0.98 V IS = -10 A, VGS = 0 V 2
Drain-Source Voltage (N-ch) VDS 60 V N-channel 1
Drain-Source Voltage (P-ch) VDS -60 V P-channel 1
Gate-Source Voltage (N-ch) VGS -20 20 V N-channel 1
Gate-Source Voltage (P-ch) VGS -20 20 V P-channel 1
Continuous Drain Current (N-ch) ID 35 A TC = 25°C (package limited) 1
Continuous Drain Current (P-ch) ID -20 A TC = 25°C (package limited) 1
Pulsed Drain Current (N-ch) IDM 140 A Pulse width limited by maximum junction temperature 1
Pulsed Drain Current (P-ch) IDM -80 A Pulse width limited by maximum junction temperature 1
Continuous Source Current, Diode Conduction (N-ch) IS 35 A TC = 25°C 1
Continuous Source Current, Diode Conduction (P-ch) IS -20 A TC = 25°C 1
Power Dissipation (N-ch) PD 50 W TC = 25°C 1
Power Dissipation (P-ch) PD 50 W TC = 25°C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient Thermal Resistance RθJA 50 °C/W Surface mounted on 1in x 1in FR4 board 1
Maximum Junction-to-Case Thermal Resistance RθJC 3 °C/W 1

CAD (KiCad official)

  • Symbol: AP4511GH-A-VB
  • Footprint: Package_TO_SOT_SMD:TO-252-4
  • 3D model: TO-252-4L (KiCad packages3D, STEP)
  • 3D model files: ap4511gh-a-vb-etched.step / ap4511gh-a-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4511gh-a-vb.step / ap4511gh-a-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (11 pp, sha256 20696ae4c951f8b8, retrieved 2026-10-28, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF