component
AP4511GH-A-VB
Public Made by Adomby adom
VBsemi Elec MOSFETs, TO-252-4L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP4511GH-A-VB
VBsemi Elec · MOSFETs · TO-252-4L
AP4511GH-A-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS 60 V, ID 35 A at TC=25°C). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20 V maximum). |
| 3 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the tab. |
| 4 | S2 | passive | Source of the P-channel MOSFET (VDS -60 V, ID -20 A at TC=25°C). |
| 5 | G2 | input | Gate of the P-channel MOSFET (VGS ±20 V maximum). |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Threshold Voltage (N-ch) | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 uA | 2 | |
| Gate-Source Threshold Voltage (P-ch) | VGS(th) | -1 | -3 | V | VDS = VGS, ID = -250 uA | 2 | |
| Gate-Body Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 | |
| Zero Gate Voltage Drain Current (N-ch) | IDSS | 1 | uA | VDS = 60 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current (P-ch) | IDSS | -1 | uA | VDS = -48 V, VGS = 0 V | 2 | ||
| On-State Drain Current (N-ch) | ID(on) | 45 | A | VDS = 5 V, VGS = 10 V | 2 | ||
| On-State Drain Current (P-ch) | ID(on) | -25 | A | VDS = -5 V, VGS = -10 V | 2 | ||
| Drain-Source On-Resistance (N-ch) | rDS(on) | 30 | mΩ | VGS = 10 V, ID = 20 A | 2 | ||
| Drain-Source On-Resistance (N-ch) | rDS(on) | 33 | mΩ | VGS = 4.5 V, ID = 16 A | 2 | ||
| Drain-Source On-Resistance (P-ch) | rDS(on) | 50 | mΩ | VGS = -10 V, ID = -10 A | 2 | ||
| Drain-Source On-Resistance (P-ch) | rDS(on) | 60 | mΩ | VGS = -4.5 V, ID = -8 A | 2 | ||
| Diode Forward Voltage (N-ch) | VSD | 0.89 | V | IS = 17 A, VGS = 0 V | 2 | ||
| Diode Forward Voltage (P-ch) | VSD | -0.98 | V | IS = -10 A, VGS = 0 V | 2 | ||
| Drain-Source Voltage (N-ch) | VDS | 60 | V | N-channel | 1 | ||
| Drain-Source Voltage (P-ch) | VDS | -60 | V | P-channel | 1 | ||
| Gate-Source Voltage (N-ch) | VGS | -20 | 20 | V | N-channel | 1 | |
| Gate-Source Voltage (P-ch) | VGS | -20 | 20 | V | P-channel | 1 | |
| Continuous Drain Current (N-ch) | ID | 35 | A | TC = 25°C (package limited) | 1 | ||
| Continuous Drain Current (P-ch) | ID | -20 | A | TC = 25°C (package limited) | 1 | ||
| Pulsed Drain Current (N-ch) | IDM | 140 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Pulsed Drain Current (P-ch) | IDM | -80 | A | Pulse width limited by maximum junction temperature | 1 | ||
| Continuous Source Current, Diode Conduction (N-ch) | IS | 35 | A | TC = 25°C | 1 | ||
| Continuous Source Current, Diode Conduction (P-ch) | IS | -20 | A | TC = 25°C | 1 | ||
| Power Dissipation (N-ch) | PD | 50 | W | TC = 25°C | 1 | ||
| Power Dissipation (P-ch) | PD | 50 | W | TC = 25°C | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 175 | °C | 1 | ||
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | 50 | °C/W | Surface mounted on 1in x 1in FR4 board | 1 | ||
| Maximum Junction-to-Case Thermal Resistance | RθJC | 3 | °C/W | 1 |
CAD (KiCad official)
- Symbol:
AP4511GH-A-VB - Footprint:
Package_TO_SOT_SMD:TO-252-4 - 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files:
ap4511gh-a-vb-etched.step/ap4511gh-a-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap4511gh-a-vb.step/ap4511gh-a-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (11 pp, sha256
20696ae4c951f8b8, retrieved 2026-10-28, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text+vision), consensusclaude-opus-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP4511GH-A-VB
**VBsemi Elec** · MOSFETs · TO-252-4L
AP4511GH-A-VB from VBsemi Elec, in a TO-252-4L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S1 | passive | Source of the N-channel MOSFET (VDS 60 V, ID 35 A at TC=25°C). |
| 2 | G1 | input | Gate of the N-channel MOSFET (VGS ±20 V maximum). |
| 3 | D1/D2 | passive | Common drain of the N-channel and P-channel MOSFETs, connected to the tab. |
| 4 | S2 | passive | Source of the P-channel MOSFET (VDS -60 V, ID -20 A at TC=25°C). |
| 5 | G2 | input | Gate of the P-channel MOSFET (VGS ±20 V maximum). |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | TO-252-4L |
| Category | Triode/MOS Tube/Transistor |
| Pins | 5 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Gate-Source Threshold Voltage (N-ch) | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 uA | 2 |
| Gate-Source Threshold Voltage (P-ch) | VGS(th) | -1 | | -3 | V | VDS = VGS, ID = -250 uA | 2 |
| Gate-Body Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current (N-ch) | IDSS | | | 1 | uA | VDS = 60 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current (P-ch) | IDSS | | | -1 | uA | VDS = -48 V, VGS = 0 V | 2 |
| On-State Drain Current (N-ch) | ID(on) | 45 | | | A | VDS = 5 V, VGS = 10 V | 2 |
| On-State Drain Current (P-ch) | ID(on) | -25 | | | A | VDS = -5 V, VGS = -10 V | 2 |
| Drain-Source On-Resistance (N-ch) | rDS(on) | | | 30 | mΩ | VGS = 10 V, ID = 20 A | 2 |
| Drain-Source On-Resistance (N-ch) | rDS(on) | | | 33 | mΩ | VGS = 4.5 V, ID = 16 A | 2 |
| Drain-Source On-Resistance (P-ch) | rDS(on) | | | 50 | mΩ | VGS = -10 V, ID = -10 A | 2 |
| Drain-Source On-Resistance (P-ch) | rDS(on) | | | 60 | mΩ | VGS = -4.5 V, ID = -8 A | 2 |
| Diode Forward Voltage (N-ch) | VSD | | | 0.89 | V | IS = 17 A, VGS = 0 V | 2 |
| Diode Forward Voltage (P-ch) | VSD | | | -0.98 | V | IS = -10 A, VGS = 0 V | 2 |
| Drain-Source Voltage (N-ch) | VDS | | | 60 | V | N-channel | 1 |
| Drain-Source Voltage (P-ch) | VDS | | | -60 | V | P-channel | 1 |
| Gate-Source Voltage (N-ch) | VGS | -20 | | 20 | V | N-channel | 1 |
| Gate-Source Voltage (P-ch) | VGS | -20 | | 20 | V | P-channel | 1 |
| Continuous Drain Current (N-ch) | ID | | | 35 | A | TC = 25°C (package limited) | 1 |
| Continuous Drain Current (P-ch) | ID | | | -20 | A | TC = 25°C (package limited) | 1 |
| Pulsed Drain Current (N-ch) | IDM | | | 140 | A | Pulse width limited by maximum junction temperature | 1 |
| Pulsed Drain Current (P-ch) | IDM | | | -80 | A | Pulse width limited by maximum junction temperature | 1 |
| Continuous Source Current, Diode Conduction (N-ch) | IS | | | 35 | A | TC = 25°C | 1 |
| Continuous Source Current, Diode Conduction (P-ch) | IS | | | -20 | A | TC = 25°C | 1 |
| Power Dissipation (N-ch) | PD | | | 50 | W | TC = 25°C | 1 |
| Power Dissipation (P-ch) | PD | | | 50 | W | TC = 25°C | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 175 | °C | | 1 |
| Maximum Junction-to-Ambient Thermal Resistance | RθJA | | | 50 | °C/W | Surface mounted on 1in x 1in FR4 board | 1 |
| Maximum Junction-to-Case Thermal Resistance | RθJC | | | 3 | °C/W | | 1 |
## CAD (KiCad official)
- Symbol: `AP4511GH-A-VB`
- Footprint: `Package_TO_SOT_SMD:TO-252-4`
- 3D model: TO-252-4L (KiCad packages3D, STEP)
- 3D model files: `ap4511gh-a-vb-etched.step` / `ap4511gh-a-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap4511gh-a-vb.step` / `ap4511gh-a-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ap4511gh-a-vb-datasheet.pdf) (11 pp, sha256 `20696ae4c951f8b8`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap4511gh-a-vb-datasheet.pdf)