AP4410M-VB

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  "type": "component",
  "slug": "ap4410m-vb",
  "title": "AP4410M-VB",
  "brief": "VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "version": "0.1.0",
  "license": "CC-BY-SA-4.0",
  "tags": [
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  "component": {
    "mpn": "AP4410M-VB",
    "manufacturer": "VBsemi Elec",
    "package": "SO-8",
    "pin_count": 8,
    "category": "Triode/MOS Tube/Transistor",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/9ad9b13624cea7ece610a456b6722a98.pdf",
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      "lbr": "ap4410m-vb.lbr"
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    "distributor_links": {
      "lcsc": "C20417595"
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      "checked_at": "2026-10-27T08:13:18Z",
      "source": "Component Ocean /api/assign-pns",
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        "status": "no match"
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    "pins": [
      {
        "number": "1",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET (pins 1-3 are tied together); continuous source-drain diode current 3.7 A at TC = 25 °C is not applicable here, see datasheet ratings."
      },
      {
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        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, connected in parallel with pins 1 and 3."
      },
      {
        "number": "3",
        "name": "S",
        "type": "passive",
        "description": "Source terminal of the N-channel MOSFET, connected in parallel with pins 1 and 2."
      },
      {
        "number": "4",
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        "type": "input",
        "description": "Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20 V and threshold VGS(th) is 1.0 V min to 3.0 V max."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
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      },
      {
        "number": "6",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET, connected in parallel with pins 5, 7 and 8; VDS rating 30 V."
      },
      {
        "number": "7",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET, connected in parallel with pins 5, 6 and 8; VDS rating 30 V."
      },
      {
        "number": "8",
        "name": "D",
        "type": "passive",
        "description": "Drain terminal of the MOSFET, connected in parallel with pins 5, 6 and 7; VDS rating 30 V."
      }
    ],
    "provenance": {
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        "at": "2026-10-27T08:13:08"
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        "sha256": "1cf944589f4031bc",
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      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 8,
        "described": 8,
        "cites_pages": true,
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  "metadata": {
    "specs": {
      "Manufacturer": "VBsemi Elec",
      "Package": "SO-8",
      "Category": "Triode/MOS Tube/Transistor",
      "Pins": "8"
    },
    "characteristics": {
      "version": 1,
      "source": "datasheet",
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      "rows": [
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          "name": "Drain-Source Breakdown Voltage",
          "symbol": "VDS",
          "kind": "electrical",
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          "min": 30,
          "typ": null,
          "max": null,
          "conditions": "VGS = 0 V, ID = 250 µA",
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        },
        {
          "name": "Gate-Source Threshold Voltage",
          "symbol": "VGS(th)",
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          "conditions": "VDS = VGS, ID = 250 µA",
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        {
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          "conditions": "VDS = 0 V, VGS = ± 20 V",
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        },
        {
          "name": "Zero Gate Voltage Drain Current",
          "symbol": "IDSS",
          "kind": "electrical",
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          "max": 1,
          "conditions": "VDS = 30 V, VGS = 0 V",
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        },
        {
          "name": "Zero Gate Voltage Drain Current",
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        {
          "name": "Forward Transconductance",
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          "kind": "electrical",
          "unit": "S",
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          "max": null,
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          "name": "Gate Resistance",
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          "conditions": "IS = 9 A",
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        },
        {
          "name": "Body Diode Reverse Recovery Time",
          "symbol": "trr",
          "kind": "electrical",
          "unit": "ns",
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          "max": 30,
          "conditions": "IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C",
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          "unit": "nC",
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          "typ": 6,
          "max": 12,
          "conditions": "IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C",
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          "conditions": "TA = 25 °C",
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        {
          "name": "Pulsed Drain Current",
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          "conditions": "TA = 25 °C",
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          "name": "Avalanche Energy",
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          "conditions": "L = 0.1 mH",
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          "conditions": "",
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          "name": "Maximum Junction-to-Ambient",
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          "kind": "thermal",
          "unit": "°C/W",
          "min": null,
          "typ": 39,
          "max": 55,
          "conditions": "t ≤ 10 s, surface mounted on 1\" x 1\" FR4 board",
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        {
          "name": "Maximum Junction-to-Foot (Drain)",
          "symbol": "RthJF",
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          "name": "Drain-Source On-State Resistance",
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        {
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          "name": "Gate-Source Charge",
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        {
          "name": "Gate-Drain Charge",
          "symbol": "Qgd",
          "kind": "electrical",
          "unit": "nC",
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          "typ": 2.3,
          "max": null,
          "conditions": "VDS = 15 V, VGS = 5 V, ID = 10 A",
          "source_page": 2,
          "source": "datasheet"
        }
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