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AP4410M-VB
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VBsemi Elec MOSFETs, SO-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP4410M-VB
VBsemi Elec · MOSFETs · SO-8
AP4410M-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are tied together); continuous source-drain diode current 3.7 A at TC = 25 °C is not applicable here, see datasheet ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with pins 1 and 2. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20 V and threshold VGS(th) is 1.0 V min to 3.0 V max. |
| 5 | D | passive | Drain terminal of the MOSFET (pins 5-8 are tied together); drain-source voltage rating is 30 V. |
| 6 | D | passive | Drain terminal of the MOSFET, connected in parallel with pins 5, 7 and 8; VDS rating 30 V. |
| 7 | D | passive | Drain terminal of the MOSFET, connected in parallel with pins 5, 6 and 8; VDS rating 30 V. |
| 8 | D | passive | Drain terminal of the MOSFET, connected in parallel with pins 5, 6 and 7; VDS rating 30 V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | V | VGS = 0 V, ID = 250 µA | 2 | ||
| Gate-Source Threshold Voltage | VGS(th) | 1 | 3 | V | VDS = VGS, ID = 250 µA | 2 | |
| Gate-Source Leakage | IGSS | -100 | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 | |
| Zero Gate Voltage Drain Current | IDSS | 1 | µA | VDS = 30 V, VGS = 0 V | 2 | ||
| Zero Gate Voltage Drain Current | IDSS | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 | ||
| On-State Drain Current | ID(on) | 20 | A | VDS ≥ 5 V, VGS = 10 V | 2 | ||
| Forward Transconductance | gfs | 50 | S | VDS = 15 V, ID = 10 A | 2 | ||
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | 0.8 | 1.2 | V | IS = 9 A | 2 | |
| Body Diode Reverse Recovery Time | trr | 15 | 30 | ns | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Body Diode Reverse Recovery Charge | Qrr | 6 | 12 | nC | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 | |
| Drain-Source Voltage | VDS | 30 | V | TA = 25 °C | 1 | ||
| Gate-Source Voltage | VGS | -20 | 20 | V | TA = 25 °C | 1 | |
| Pulsed Drain Current | IDM | 45 | A | TA = 25 °C | 1 | ||
| Avalanche Energy | EAS | 21 | mJ | L = 0.1 mH | 1 | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | °C | 1 | ||
| Maximum Junction-to-Ambient | RthJA | 39 | 55 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 | |
| Maximum Junction-to-Foot (Drain) | RthJF | 25 | 29 | °C/W | Steady State | 1 | |
| Drain-Source On-State Resistance | RDS(on) | 0.008 | Ω | VGS = 10 V | 1 | ||
| Drain-Source On-State Resistance | RDS(on) | 0.011 | Ω | VGS = 4.5 V | 1 | ||
| Output Capacitance | Coss | 165 | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 | ||
| Gate-Source Charge | Qgs | 2.5 | nC | VDS = 15 V, VGS = 5 V, ID = 10 A | 2 | ||
| Gate-Drain Charge | Qgd | 2.3 | nC | VDS = 15 V, VGS = 5 V, ID = 10 A | 2 |
CAD (KiCad official)
- Symbol:
AP4410M-VB - Footprint:
Package_SO:SOIC-8_3.9x4.9mm_P1.27mm - 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files:
ap4410m-vb-etched.step/ap4410m-vb-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap4410m-vb.step/ap4410m-vb.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: VBsemi Elec datasheet (9 pp, sha256
1cf944589f4031bc, retrieved 2026-10-27, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-sonnet-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP4410M-VB
**VBsemi Elec** · MOSFETs · SO-8
AP4410M-VB from VBsemi Elec, in a SO-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET (pins 1-3 are tied together); continuous source-drain diode current 3.7 A at TC = 25 °C is not applicable here, see datasheet ratings. |
| 2 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with pins 1 and 3. |
| 3 | S | passive | Source terminal of the N-channel MOSFET, connected in parallel with pins 1 and 2. |
| 4 | G | input | Gate terminal of the N-channel MOSFET; gate-source voltage limit is ±20 V and threshold VGS(th) is 1.0 V min to 3.0 V max. |
| 5 | D | passive | Drain terminal of the MOSFET (pins 5-8 are tied together); drain-source voltage rating is 30 V. |
| 6 | D | passive | Drain terminal of the MOSFET, connected in parallel with pins 5, 7 and 8; VDS rating 30 V. |
| 7 | D | passive | Drain terminal of the MOSFET, connected in parallel with pins 5, 6 and 8; VDS rating 30 V. |
| 8 | D | passive | Drain terminal of the MOSFET, connected in parallel with pins 5, 6 and 7; VDS rating 30 V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SO-8 |
| Category | Triode/MOS Tube/Transistor |
| Pins | 8 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | VDS | 30 | | | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 | | 100 | nA | VDS = 0 V, VGS = ± 20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS | | | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 20 | | | A | VDS ≥ 5 V, VGS = 10 V | 2 |
| Forward Transconductance | gfs | | 50 | | S | VDS = 15 V, ID = 10 A | 2 |
| Gate Resistance | Rg | 0.36 | 1.8 | 3.6 | Ω | f = 1 MHz | 2 |
| Body Diode Voltage | VSD | | 0.8 | 1.2 | V | IS = 9 A | 2 |
| Body Diode Reverse Recovery Time | trr | | 15 | 30 | ns | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr | | 6 | 12 | nC | IF = 9 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Drain-Source Voltage | VDS | | | 30 | V | TA = 25 °C | 1 |
| Gate-Source Voltage | VGS | -20 | | 20 | V | TA = 25 °C | 1 |
| Pulsed Drain Current | IDM | | | 45 | A | TA = 25 °C | 1 |
| Avalanche Energy | EAS | | | 21 | mJ | L = 0.1 mH | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | | 150 | °C | | 1 |
| Maximum Junction-to-Ambient | RthJA | | 39 | 55 | °C/W | t ≤ 10 s, surface mounted on 1" x 1" FR4 board | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF | | 25 | 29 | °C/W | Steady State | 1 |
| Drain-Source On-State Resistance | RDS(on) | | 0.008 | | Ω | VGS = 10 V | 1 |
| Drain-Source On-State Resistance | RDS(on) | | 0.011 | | Ω | VGS = 4.5 V | 1 |
| Output Capacitance | Coss | | 165 | | pF | VDS = 15 V, VGS = 0 V, f = 1 MHz | 2 |
| Gate-Source Charge | Qgs | | 2.5 | | nC | VDS = 15 V, VGS = 5 V, ID = 10 A | 2 |
| Gate-Drain Charge | Qgd | | 2.3 | | nC | VDS = 15 V, VGS = 5 V, ID = 10 A | 2 |
## CAD (KiCad official)
- Symbol: `AP4410M-VB`
- Footprint: `Package_SO:SOIC-8_3.9x4.9mm_P1.27mm`
- 3D model: SO-8 (KiCad packages3D, STEP)
- 3D model files: `ap4410m-vb-etched.step` / `ap4410m-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap4410m-vb.step` / `ap4410m-vb.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [VBsemi Elec datasheet](docs/ap4410m-vb-datasheet.pdf) (9 pp, sha256 `1cf944589f4031bc`, retrieved 2026-10-27, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap4410m-vb-datasheet.pdf)