component

AP4409AGEM

Public Made by Adom

by adom

APEC(Advanced Power Elec) MOSFETs, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistorsap4409agemfactory-2.0.0extractor-text

Verified AP4409AGEM

by Ray · last 30 Oct 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

30 Oct 2026RayPublished by the parts factory: tier lcsc, 8 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AP4409AGEM · SOIC-8 · 8 pins
  • ✓copper: 8 copper pads, none touching another net
  • ✓datasheet: all 8 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOIC-8_3.9x4.9mm_P1.27mm
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-3ugv0ht0/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.6)
  • ✓pads: 8 pins = 8 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 8 pins agree
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ap4409agem.kicad_sym✓ ap4409agem.kicad_mod✓ ap4409agem.step
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Generated by kicad-footprint-generator · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray 4d ago
viewers ap4409agem: viewers · Ray 4d ago
ap4409agem-etched.glb Publish 0.1.0 · Ray 4d ago
ap4409agem-etched.step ap4409agem: factory component page (tier=lcsc) · Ray 4d ago
ap4409agem-hero.glb ap4409agem: hero GLB from the etched model (keeps the MPN mark) · Ray 4d ago
ap4409agem-hero.overlay.json Publish 0.1.0 · Ray 4d ago
ap4409agem.glb Publish 0.1.0 · Ray 4d ago
ap4409agem.kicad_mod Publish 0.1.0 · Ray 4d ago
ap4409agem.kicad_sym Publish 0.1.0 · Ray 4d ago
ap4409agem.lbr Publish 0.1.0 · Ray 4d ago
ap4409agem.step Publish 0.1.0 · Ray 4d ago
package.json Publish 0.1.0 · Ray 4d ago
page.json Set visibility: public · Ray 4d ago
README.md Publish 0.1.0 · Ray 4d ago
verification.json Verified: Published by the parts factory: tier lcsc, 8 pins · Ray 4d ago

AP4409AGEM

APEC(Advanced Power Elec) · MOSFETs · SOIC-8

AP4409AGEM from APEC(Advanced Power Elec), in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a continuous drain current of -14.5 A at TA=25°C.
2 S passive Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a continuous drain current of -14.5 A at TA=25°C.
3 S passive Source terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a continuous drain current of -14.5 A at TA=25°C.
4 G input Gate terminal of the P-channel MOSFET; the gate-source voltage is rated at ±20 V (VGS +20 V in the absolute maximum table).
5 D passive Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a pulsed drain current of -50 A.
6 D passive Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a pulsed drain current of -50 A.
7 D passive Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a pulsed drain current of -50 A.
8 D passive Drain terminal of the P-channel MOSFET; the device is rated for a drain-source voltage of -35 V and a pulsed drain current of -50 A.

Key specifications

Parameter Value
Manufacturer APEC(Advanced Power Elec)
Package SOIC-8
Category Transistors
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -35 V 1
Gate-Source Voltage VGS 20 V 1
Continuous Drain Current ID@TA=25℃ -14.5 A VGS @ 10V, TA=25℃ 1
Continuous Drain Current ID@TA=70℃ -12 A VGS @ 10V, TA=70℃ 1
Pulsed Drain Current IDM -50 A 1
Total Power Dissipation PD@TA=25℃ 2.5 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-a 50 ℃/W Surface mounted on 1 in² copper pad of FR4 board, t<10sec (footnote 3a) 1
Thermal Resistance, Junction-ambient (0.003 in² pad) Rthja 125 ℃/W Mounted on 0.003 in² pad of 2 oz copper (footnote b) 2
Drain-Source Breakdown Voltage BVDSS -35 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 7.5 mΩ VGS=-10V, ID=-7A 2
Static Drain-Source On-Resistance RDS(ON) 15 mΩ VGS=-4V, ID=-7A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -10 uA VDS=-30V, VGS=0V 2
Drain-Source Leakage Current (Tj=70℃) IDSS -25 uA Tj=70℃; VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS 30 uA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 58 90 nC ID=-14A 2
Input Capacitance Ciss 4100 6600 pF VGS=0V 2
Forward On Voltage VSD -1.3 V IS=-14A, VGS=0V 2

CAD (KiCad official)

  • Symbol: AP4409AGEM
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ap4409agem-etched.step / ap4409agem-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap4409agem.step / ap4409agem.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC(Advanced Power Elec) datasheet (7 pp, sha256 e4d24a44a11be816, retrieved 2026-10-30, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF