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AP40P03GJ-VB

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VBsemi Elec MOSFETs, TO-251. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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Contents

README

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AP40P03GJ-VB

VBsemi Elec · MOSFETs · TO-251

AP40P03GJ-VB from VBsemi Elec, in a TO-251. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal of the N-channel MOSFET, with a gate-source voltage rating of ±20 V.
2 D passive Drain terminal of the N-channel MOSFET, with a drain-source voltage rating of 30 V and a pulsed drain current IDM of 150 A.
3 S passive Source terminal of the N-channel MOSFET, serving as the reference for VGS and the body diode with a continuous source-drain diode current IS of 15 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-251
Category Transistors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 30 V 1
Gate-Source Voltage VGS -20 20 V 1
Pulsed Drain Current IDM 150 A 1
Avalanche Current IAS 25 A L = 0.1 mH 1
Avalanche Energy EAS 40 mJ 1
Continuous Source-Drain Diode Current IS 15 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.9 A Tb, A = 25 °C 1
Maximum Power Dissipation PD 3.5 W Tb, A = 25 °C 1
Maximum Power Dissipation PD 2.2 W Tb, A = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Soldering Recommendations (Peak Temperature) 260 °C Peak temperature 1
Maximum Junction-to-Ambient RthJA 29 36 °C/W t ≤ 10 s 1
Maximum Junction-to-Case (Drain) RthJC 3.6 4.5 °C/W Steady State 1
Drain-Source Breakdown Voltage VDS 30 V VGS = 0 V, ID = 250 µA 2
Drain-Source Breakdown Voltage Temperature Coefficient ΔVDS/TJ 33 mV/°C ID = 250 µA 2
Gate-Source Threshold Voltage VGS(th) 1.2 3 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ± 20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 30 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 5 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 15 A VDS ≥ 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 7 mΩ VGS = 10 V, ID = 10 A 2
Drain-Source On-State Resistance RDS(on) 9 mΩ VGS = 4.5 V, ID = 7 A 2
Forward Transconductance gfs 24 S VDS = 15 V, ID = 10 A 2
Output Capacitance Coss 200 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 150 pF VDS = 15 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 33 nC VDS = 15 V, VGS = 10 V, ID = 10 A 2
Total Gate Charge Qg 18 nC VDS = 15 V, VGS = 4.5 V, ID = 10 A 2
Gate-Source Charge Qgs 7.3 nC 2
Gate-Drain Charge Qgd 6.2 nC 2
Gate Resistance Rg 0.2 0.8 1.6 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 15 30 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 12 24 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 13 26 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 10 20 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 9 18 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 9 18 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 14 28 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 8 16 ns VDD = 15 V, RL = 1.5 Ω, ID ≅ 10 A, VGEN = 10 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS 16 A TC = 25 °C 2
Pulse Diode Forward Current ISM 32 A 2
Body Diode Voltage VSD 0.78 1.2 V IS = 3 A, VGS = 0 V 2
Body Diode Reverse Recovery Time trr 17 34 ns IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 9.5 19 nC IF = 10 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Reverse Recovery Fall Time ta 10 ns 2
Reverse Recovery Rise Time tb 7 ns 2

CAD (KiCad official)

  • Symbol: AP40P03GJ-VB
  • Footprint: Package_TO_SOT_THT:TO-251-3_Vertical
  • 3D model: TO-251 (KiCad packages3D, STEP)
  • 3D model files: ap40p03gj-vb-etched.step / ap40p03gj-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap40p03gj-vb.step / ap40p03gj-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (8 pp, sha256 8667dccfd8447a60, retrieved 2026-10-27, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF