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AP3P050AH

APEC(Advanced Power Elec) · MOSFETs · TO-252

AP3P050AH from APEC(Advanced Power Elec), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; P-channel gate drive with VGS rated +20V (absolute max) and threshold of -1V to -3V at ID=-250uA.
2 D passive Drain (also the TO-252 tab); VDS rated -30V with continuous drain current of -15.6A at TC=25°C.
3 S passive Source; connects to the load/supply side of the P-channel MOSFET, with body diode forward voltage max -1.2V at IS=-10A.

Key specifications

Parameter Value
Manufacturer APEC(Advanced Power Elec)
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS 20 V 1
Drain Current ID@TC=25℃ -15.6 A VGS @ 10V 1
Drain Current ID@TC=100℃ -9.8 A VGS @ 10V 1
Pulsed Drain Current IDM -40 A 1
Total Power Dissipation PD@TC=25℃ 17.8 W 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance Junction-case Rthj-c 7 ℃/W 1
Thermal Resistance Junction-ambient Rthj-a 62.5 ℃/W PCB mount 1
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 50 mΩ VGS=-10V, ID=-10A 2
Static Drain-Source On-Resistance RDS(ON) 90 mΩ VGS=-4.5V, ID=-5A 2
Gate Threshold Voltage VGS(th) -1 -3 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -10 uA VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS 0.1 uA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 14 22.4 nC ID=-10A, VDS=-24V, VGS=-10V 2
Input Capacitance Ciss 610 976 pF VGS=0V, VDS=-25V, f=1.0MHz 2
Gate Resistance Rg 13 26 Ω f=1.0MHz 2
Forward On Voltage VSD -1.2 V IS=-10A, VGS=0V 2
Forward Transconductance gfs 10 S VDS=-10V, ID=-10A 2
Gate-Source Charge Qgs 3 nC VDS=-24V 2
Gate-Drain Charge Qgd 3 nC VGS=-10V 2
Turn-on Delay Time td(on) 9 ns VDS=-15V 2
Rise Time tr 30 ns ID=-10A 2
Turn-off Delay Time td(off) 23 ns RG=3.3Ω 2
Fall Time tf 30 ns VGS=-10V 2
Output Capacitance Coss 85 pF VDS=-25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 65 pF f=1.0MHz 2
Reverse Recovery Time trr 9 ns IS=-10A, VGS=0V, dI/dt=-100A/µs 2
Reverse Recovery Charge Qrr 3 nC IS=-10A, VGS=0V, dI/dt=-100A/µs 2

CAD (KiCad official)

  • Symbol: AP3P050AH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap3p050ah-etched.step / ap3p050ah-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap3p050ah.step / ap3p050ah.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC(Advanced Power Elec) datasheet (8 pp, sha256 f52f87de85f35ad1, retrieved 2026-10-31, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF