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AP3843CMTR-E1

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Diodes Incorporated DC-DC Converters, SOIC-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP3843CMTR-E1

Diodes Incorporated · DC-DC Converters · SOIC-8

AP3843CMTR-E1 from Diodes Incorporated, in a SOIC-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 COMP output This pin is the Error Amplifier output and is made available for loop compensation.
2 VFB input The inverting input of the Error Amplifier, normally connected to the switching power supply output through a resistor divider.
3 ISENSE input A voltage proportional to inductor current is connected to this input, and the PWM uses it to terminate the output switch conduction.
4 RT/CT passive The oscillator frequency and maximum output duty cycle are programmed by connecting resistor RT to VREF and capacitor CT to ground, with operation to 500 kHz possible.
5 GND power_in The combined control circuitry and power ground, to which all voltages are referenced.
6 OUTPUT output This output directly drives the gate of a power MOSFET, sourcing and sinking peak currents up to 1.0 A.
7 VCC power_in The positive supply of the control IC.
8 VREF power_out This is the reference output, providing charging current for capacitor CT through resistor RT.

Key specifications

Parameter Value
Manufacturer Diodes Incorporated
Package SOIC-8
Category Power Management (PMIC)
Pins 8

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Supply Voltage VCC 30 V 5
Output Current IO -1 1 A 5
Analog Inputs V(ANA) -0.3 6.3 V 5
Error Amp Output Sink Current ISINK(E.A) 10 mA 5
Power Dissipation (SOIC-8) PD 460 mW TA<25 oC 5
Junction Operating Temperature TJ -40 150 °C 5
Storage Temperature Range TSTG -65 150 °C 5
Lead Temperature (Soldering, 10sec) TLEAD 300 °C 10 sec 5
ESD (Machine Model) ESD 250 V 5
Thermal Resistance (Junction to Ambient) SOIC-8 θJA 160 °C/W 5
Oscillation Frequency (recommended) f 500 KHz 5
Ambient Temperature TA -40 85 °C 5
Reference Output Voltage VREF 4.9 5 5.1 V TA=25oC, IREF=1mA 6
Total Output Variation (Line, Load, Temp.) 4.82 5.18 V 6
Line Regulation ΔVREF 4 15 mV 12V ≤ VCC ≤25V 6
Load Regulation ΔVREF 4 15 mV 1mA ≤ IREF ≤20mA 6
Short Circuit Output Current ISC -100 -180 mA TA=25oC 6
Temperature Stability (Reference) 0.3 mV/oC 6
Oscillation Frequency f 47 52 57 KHz TA=25oC 6
Oscillator Amplitude VOSC 1.7 V Pin 4, peak to peak 6
Temperature Stability (Oscillator) 2.5 % 6
Voltage Stability 0.2 1 % 12V ≤ VCC ≤ 25V 6
Discharge Current 8.5 9.5 10.5 mA Vpin 4 =2V (Note 7) 6
Error Amp Input Voltage VI 2.45 2.5 2.55 V Vpin 1=2.5V 6
Error Amp Output Sink Current ISINK 5 8 mA Vpin1=1.1V 6
Error Amp Output Source Current ISOURCE -0.5 -0.8 mA Vpin1=5V 6
Error Amp High Output Voltage VOH 5 7 V RL=15kΩ to GND 6
Error Amp Low Output Voltage VOL 0.7 1.1 V RL=15kΩ to pin 8 6
Error Amp Voltage Gain 65 90 dB 2V ≤ VO ≤ 4V 6
Error Amp Power Supply Rejection Ratio PSRR 60 70 dB 12V ≤ VCC ≤ 25V 6
Maximum Input Signal VI(MAX) 0.9 1 1.1 V Vpin1=5V (Note 4) 6
Current Sense Gain GV 2.85 3 3.15 V/V (Note 4, 5) 6
Current Sense Power Supply Rejection Ratio PSRR 70 dB 12V≤ VCC≤ 25V (Note 4, 6) 6
Delay to Output 150 300 ns Vpin3 = 0 to 2V (Note 6) 6
Input Bias Current IBIAS -3 -10 μA 6
Low Output Voltage (ISINK=20mA) VOL 0.1 0.4 V ISINK = 20mA 6
Low Output Voltage (ISINK=200mA) VOL 1.4 2.2 V ISINK = 200mA 6
High Output Voltage (ISOURCE=20mA) VOH 13 14 V ISOURCE = 20mA 6
High Output Voltage (ISOURCE=200mA) VOH 12 13 V ISOURCE = 200mA 6
Rise Time tR 50 150 ns TA=25oC, CL=1nF (Note 6) 6
Fall Time tF 50 150 ns TA=25oC, CL=1nF (Note 6) 6
UVLO Start Threshold (AP3843C/AP3845C) VTH(ST) 7.8 8.4 9 V AP3843C/AP3845C 7
UVLO Min. Operation Voltage after Turn On (AP3843C/AP3845C) VOPR(Min.) 7 7.6 8.2 V AP3843C/AP3845C 7
Max. Duty Cycle (AP3843C) D(Max.) 95 97 100 % AP3842C/AP3843C 7
Min. Duty Cycle D(Min.) 0 % 7
Start-up Current (AP3843C) IST 50 80 μA AP3843C/AP3845C, VCC=6.5V 7
Operating Supply Current ICC(OPR) 8 12 mA Vpin3=Vpin2=0V 7
Zener Voltage VZ 30 34 V ICC=25mA 7
Shutdown Temperature TSHUT 155 °C (Note 6) 7
Temperature Hysteresis THYS 25 °C (Note 6) 7

CAD (KiCad official)

  • Symbol: AP3843CMTR-E1
  • Footprint: Package_SO:SOIC-8_3.9x4.9mm_P1.27mm
  • 3D model: SOIC-8 (KiCad packages3D, STEP)
  • 3D model files: ap3843cmtr-e1-etched.step / ap3843cmtr-e1-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap3843cmtr-e1.step / ap3843cmtr-e1.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: Diodes Incorporated datasheet (14 pp, sha256 becb61c7269e054e, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF