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AP3407S

Public Made by Adom

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ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOT-23-3. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP3407S

ALLPOWER ShenZhen Quan Li Semiconductor · MOSFETs · SOT-23-3

AP3407S from ALLPOWER ShenZhen Quan Li Semiconductor, in a SOT-23-3. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the P-channel MOSFET, rated for VDS = -30 V and continuous ID = -4.1 A at Ta=25℃.
2 G input Gate terminal of the P-channel MOSFET, with absolute maximum gate-source voltage VGS of ±20 V.
3 D passive Drain terminal of the P-channel MOSFET, with pulsed drain current IDM of -20 A and total power dissipation PD of 1.4 W.

Key specifications

Parameter Value
Manufacturer ALLPOWER ShenZhen Quan Li Semiconductor
Package SOT-23-3
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 2
Drain Current, Continuous ID -4.1 A 2
Drain Current, Continuous (Ta=70℃) ID(Ta=70℃) -3.5 A Ta=70℃ 2
Pulsed Drain Current IDM -20 A 2
Gate-Source Voltage VGS -20 20 V 2
Total Power Dissipation PD 1.4 W 2
Total Power Dissipation (Ta=70℃) PD(Ta=70℃) 1 W Ta=70℃ 2
Operating and Storage Junction Temperature Range TJ, TSTG -55 150 ℃ 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V ID=-250μA 2
Zero Gate Voltage Drain Current IDSS -1 μA VDS=-24V VGS=0V 2
Zero Gate Voltage Drain Current (TJ=55℃) IDSS -5 μA VDS=-24V VGS=0V TJ=55℃ 2
Gate-Body Leakage IGSS -0.1 0.1 μA VGS=±20V VDS=0V 2
On-State Drain Current ID(on) -10 A VGS=-4.5V VDS=-5V 2
Gate Threshold Voltage VGS(th) -1 -1.4 -3 V VDS=VGS ID=-250μA 2
Static Drain-Source On-Resistance RDS(on)1 RDS(on)1 54 60 mΩ VGS=-10V ID=-4.1A 2
Static Drain-Source On-Resistance RDS(on)2 (TJ=125℃) RDS(on)2 57 73 mΩ VGS=-10V ID=-4.1A TJ=125℃ 2
Static Drain-Source On-Resistance RDS(on)3 RDS(on)3 80 95 mΩ VGS=-4.5V ID=-3A 2
Forward Transconductance gFS 5.5 8.2 S VDS=-5V ID=-4A 2
Drain-Source Diode Forward Voltage VSD -0.77 -1 V VGS=0V IS=-1A 2
Input Capacitance Ciss 700 pF VDS=-15V VGS=0V f=1MHz 2
Output Capacitance Coss 120 pF VDS=-15V VGS=0V f=1MHz 2
Reverse Transfer Capacitance Crss 75 pF VDS=-15V VGS=0V f=1MHz 2
Turn-On Delay Time td(on) 8.6 ns VGS=-10V RL=3.6Ω VDS=-15V RGEN=3Ω 2
Turn-On Rise Time tr 5 ns VGS=-10V RL=3.6Ω VDS=-15V RGEN=3Ω 2
Turn-Off Delay Time td(off) 28.2 ns VGS=-10V RL=3.6Ω VDS=-15V RGEN=3Ω 2
Turn-Off Fall Time tf 13.5 ns VGS=-10V RL=3.6Ω VDS=-15V RGEN=3Ω 2

CAD (KiCad official)

  • Symbol: AP3407S
  • Footprint: Package_TO_SOT_SMD:SOT-23-3
  • 3D model: SOT-23-3 (KiCad packages3D, STEP)
  • 3D model files: ap3407s-etched.step / ap3407s-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap3407s.step / ap3407s.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALLPOWER ShenZhen Quan Li Semiconductor datasheet (6 pp, sha256 0561d287f32bff68, retrieved 2026-10-18, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF