# AP2R403GMT-HF-VB

**VBsemi Elec** · MOSFETs · DFN5x6-8

AP2R403GMT-HF-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | S | passive | Source terminal of the N-channel MOSFET; pin 1 is marked with a dot on the package. |
| 2 | S | passive | Source terminal of the N-channel MOSFET. |
| 3 | S | passive | Source terminal of the N-channel MOSFET. |
| 4 | G | input | Gate terminal with VGS rated at ±20 V maximum. |
| 5 | D | passive | Drain terminal with VDS rated at 30 V maximum. |
| 6 | D | passive | Drain terminal with VDS rated at 30 V maximum. |
| 7 | D | passive | Drain terminal with VDS rated at 30 V maximum. |
| 8 | D | passive | Drain terminal with VDS rated at 30 V maximum. |
| 9 | EP | passive | Exposed pad (from the footprint; not named in the datasheet pin table). |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | DFN5x6-8 |
| Category | Transistors/Thyristors |
| Pins | 9 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | 30 | V |  | 1 |
| Gate-Source Voltage | VGS | -20 |  | 20 | V |  | 1 |
| Continuous Drain Current | ID |  |  | 160 | A | TJ = 175 °C; TC = 25 °C | 1 |
| Continuous Drain Current | ID |  |  | 90 | A | TJ = 175 °C; TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | 33 | A | TA = 25 °C; notes b, c | 1 |
| Continuous Drain Current | ID |  |  | 29.8 | A | TA = 70 °C; notes b, c | 1 |
| Pulsed Drain Current | IDM |  |  | 300 | A |  | 1 |
| Avalanche Current | IAS |  |  | 36 | A | L = 0.1 mH | 1 |
| Single Pulse Avalanche Energy | EAS |  |  | 64.8 | mJ |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 90 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | 3.13 | A | TA = 25 °C; notes b, c | 1 |
| Maximum Power Dissipation | PD |  |  | 250 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 175 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 3.75 | W | TA = 25 °C; notes b, c | 1 |
| Maximum Power Dissipation | PD |  |  | 2.63 | W | TA = 70 °C; notes b, c | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 175 | °C |  | 1 |
| Maximum Junction-to-Ambient, t ≤ 10 s | RthJA |  | 32 | 40 | °C/W | t ≤ 10 s; notes b, d | 1 |
| Maximum Junction-to-Ambient, steady state | RthJA |  |  | 90 | °C/W | Steady state; note d | 1 |
| Maximum Junction-to-Case, steady state | RthJC |  | 0.5 | 0.6 | °C/W | Steady state | 1 |
| Drain-Source Breakdown Voltage | VDS | 30 |  |  | V | VGS = 0 V, ID = 250 µA | 2 |
| Gate-Source Threshold Voltage | VGS(th) | 1.5 |  | 2.5 | V | VDS = VGS, ID = 250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±20 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 1 | µA | VDS = 30 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | 10 | µA | VDS = 30 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | 90 |  |  | A | VDS 5 V, VGS = 10 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.0018 | Ω | VGS = 10 V, ID = 32 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.0025 | Ω | VGS = 4.5 V, ID = 29 A | 2 |
| Gate Resistance | Rg |  | 1.4 | 2.1 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 18 | 27 | ns | VDD = 15 V, RL = 0.555, ID 27 A, VGEN = 10 V, Rg = 1 | 2 |
| Rise Time | tr |  | 11 | 17 | ns | VDD = 15 V, RL = 0.555, ID 27 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) |  | 70 | 105 | ns | VDD = 15 V, RL = 0.555, ID 27 A, VGEN = 10 V, Rg = 1 | 2 |
| Fall Time | tf |  | 10 | 15 | ns | VDD = 15 V, RL = 0.555, ID 27 A, VGEN = 10 V, Rg = 1 | 2 |
| Turn-On Delay Time | td(on) |  | 55 | 83 | ns | VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Rise Time | tr |  | 180 | 270 | ns | VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) |  | 55 | 83 | ns | VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Fall Time | tf |  | 12 | 18 | ns | VDD = 15 V, RL = 0.625, ID 24 A, VGEN = 4.5 V, Rg = 1 | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | 100 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | 200 | A | Pulse test; note a | 2 |
| Body Diode Voltage | VSD |  | 0.8 | 1.2 | V | IS = 22 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 52 | 78 | ns | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 70.2 | 105 | nC | IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C | 2 |
| VDS Temperature Coefficient | VDS/TJ |  | 35 |  | mV/°C | ID = 250 µA | 2 |
| VGS(th) Temperature Coefficient | VGS(th)/TJ |  | -7.5 |  | mV/°C |  | 2 |

## CAD (KiCad official)

- Symbol: `AP2R403GMT-HF-VB`
- Footprint: `Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm`
- 3D model: DFN5x6-8 (KiCad packages3D, STEP)
- 3D model files: `ap2r403gmt-hf-vb-etched.step` / `ap2r403gmt-hf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap2r403gmt-hf-vb.step` / `ap2r403gmt-hf-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ap2r403gmt-hf-vb-datasheet.pdf) (7 pp, sha256 `0ca2532f2fc90653`, retrieved 2026-10-28, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-sonnet-5-5` (text+vision), consensus `claude-opus-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).

[Datasheet PDF](docs/ap2r403gmt-hf-vb-datasheet.pdf)