AP2615GY-HF-VB

{
  "slug": "ap2615gy-hf-vb",
  "version": "0.1.0",
  "type": "component",
  "description": "VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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  "component": {
    "mpn": "AP2615GY-HF-VB",
    "manufacturer": "VBsemi Elec",
    "package": "TSOP-6",
    "pin_count": 6,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://datasheet.lcsc.com/datasheet/pdf/a2173465eff226613df3392d98976000.pdf",
    "parts": {
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    "distributor_links": {
      "lcsc": "C18212524"
    },
    "distributor_check": {
      "checked_at": "2026-10-23T18:04:37Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "deferred",
        "error": "shared DigiKey quota guard: 887 calls left today"
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      "mouser": {
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    "pins": [
      {
        "number": "1",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 2, 5 and 6; VDS rated -30 V and continuous ID -4.8 A at TC = 25 °C."
      },
      {
        "number": "2",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 1, 5 and 6; VDS rated -30 V and pulsed IDM -20 A."
      },
      {
        "number": "3",
        "name": "G",
        "type": "input",
        "description": "Gate of the P-channel MOSFET with VGS limit of ±20 V and gate threshold of -0.5 V to -2.0 V at ID = -250 µA."
      },
      {
        "number": "4",
        "name": "S",
        "type": "passive",
        "description": "Source of the P-channel MOSFET; continuous source-drain diode current is -2.5 A at TC = 25 °C."
      },
      {
        "number": "5",
        "name": "D",
        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 1, 2 and 6; RDS(on) 0.049 Ω at VGS = -10 V."
      },
      {
        "number": "6",
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        "type": "passive",
        "description": "Drain of the P-channel MOSFET, tied internally with pins 1, 2 and 5; RDS(on) 0.054 Ω at VGS = -4.5 V."
      }
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