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AP2530AGY-HF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, TSOP-6. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP2530AGY-HF-VB

VBsemi Elec · MOSFETs · TSOP-6

AP2530AGY-HF-VB from VBsemi Elec, in a TSOP-6. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G1 input Gate of the N-channel MOSFET (Q1), whose VGS rating is ±20 V.
2 S2 passive Source of the P-channel MOSFET (Q2), with continuous source current rated -1.05 A.
3 G2 input Gate of the P-channel MOSFET (Q2), whose VGS rating is ±20 V.
4 D2 passive Drain of the P-channel MOSFET (Q2), rated VDS -20 V and ID -3.4 A at TA = 25 °C.
5 S1 passive Source of the N-channel MOSFET (Q1), with continuous source current rated 1.05 A.
6 D1 passive Drain of the N-channel MOSFET (Q1), rated VDS 20 V and ID 5.5 A at TA = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TSOP-6
Category Transistors/Thyristors
Pins 6

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage (N-Ch) VDS 20 V N-Channel, TA = 25 °C 1
Drain-Source Voltage (P-Ch) VDS -20 V P-Channel, TA = 25 °C 1
Gate-Source Voltage VGS -20 20 V N-Channel and P-Channel, ± 20 1
Continuous Source Current (N-Ch) IS 1.05 A Diode conduction, N-Channel 1
Continuous Source Current (P-Ch) IS -1.05 A Diode conduction, P-Channel 1
Maximum Power Dissipation PD 1.15 W TA = 25 °C 1
Maximum Power Dissipation PD 0.73 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance RthJA 93 110 °C/W t ≤ 5 s 1
Junction-to-Ambient Thermal Resistance RthJA 130 150 °C/W Steady State 1
Junction-to-Lead Thermal Resistance RthJL 75 90 °C/W Steady State 1
Gate Threshold Voltage (N-Ch) VGS(th) 0.8 1.5 V VDS = VGS, ID = 250 µA 2
Gate Threshold Voltage (P-Ch) VGS(th) -0.8 -1.5 V VDS = VGS, ID = - 250 µA 2
Gate-Body Leakage (N-Ch) IGSS 100 nA VDS = 0 V, VGS = ± 8 V, N-Ch (± 100) 2
Gate-Body Leakage (P-Ch) IGSS 100 nA VDS = 0 V, VGS = ± 8 V, P-Ch (± 100) 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 1 µA VDS = 16 V, VGS = 0 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -1 µA VDS = - 16 V, VGS = 0 2
Zero Gate Voltage Drain Current (N-Ch) IDSS 5 µA VDS = 16 V, VGS = 0 V, TJ = 55 °C 2
Zero Gate Voltage Drain Current (P-Ch) IDSS -5 µA VDS = - 16 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current (N-Ch) ID(on) 3.7 A VDS = 5 V, VGS = 10 V 2
On-State Drain Current (P-Ch) ID(on) -3 A VDS = - 5 V, VGS = - 10 V 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.022 Ω VGS = 10 V, ID = 2.5 A 2
Drain-Source On-State Resistance (P-Ch) RDS(on) 0.055 Ω VGS = - 10 V, ID = - 1.8 A 2
Drain-Source On-State Resistance (N-Ch) RDS(on) 0.03 Ω VGS = 4.5 V, ID = 2.0 A 2
Diode Forward Voltage (N-Ch) VSD 0.81 1.1 V IS = 1.05 A, VGS = 0 V 2
Diode Forward Voltage (P-Ch) VSD -0.83 -1.1 V IS = - 1.05 A, VGS = 0 V 2
Total Gate Charge (N-Ch) Qg 2.1 3.2 nC VDS = 15 V, VGS = 5 V, ID = 1.8 A 2
Total Gate Charge (P-Ch) Qg 2.4 3.6 nC VDS = - 15 V, VGS = - 5 V, ID = - 1.8 A 2
Turn-On Delay Time (N-Ch) td(on) 7 11 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-On Delay Time (P-Ch) td(on) 8 12 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Rise Time (N-Ch) tr 9 14 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Rise Time (P-Ch) tr 12 18 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Turn-Off Delay Time (N-Ch) td(off) 13 20 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Turn-Off Delay Time (P-Ch) td(off) 12 18 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Fall Time (N-Ch) tf 5 8 ns VDD = 15 V, RL = 15 Ω, ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 2
Fall Time (P-Ch) tf 7 11 ns VDD = - 15 V, RL = 15 Ω, ID ≅ - 1 A, VGEN = - 10 V, Rg = 6 Ω 2
Source-Drain Reverse Recovery Time (N-Ch) trr 35 60 ns IF = 1.05 A, dI/dt = 100 A/µs 2
Source-Drain Reverse Recovery Time (P-Ch) trr 30 60 ns IF = - 1.05 A, dI/dt = 100 A/µs 2

CAD (KiCad official)

  • Symbol: AP2530AGY-HF-VB
  • Footprint: Package_SO:TSOP-6_1.65x3.05mm_P0.95mm
  • 3D model: TSOP-6 (KiCad packages3D, STEP)
  • 3D model files: ap2530agy-hf-vb-etched.step / ap2530agy-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap2530agy-hf-vb.step / ap2530agy-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (10 pp, sha256 91d589d8927aab8b, retrieved 2026-10-24, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF