AP2310

{
  "slug": "ap2310",
  "version": "0.1.0",
  "type": "component",
  "description": "ALLPOWER ShenZhen Quan Li Semiconductor MOSFETs, SOT-23-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.",
  "tags": [
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    "transistors-thyristors",
    "ap2310",
    "factory-2.0.0",
    "extractor-text"
  ],
  "dependencies": {},
  "hero": {
    "type": "image",
    "path": "docs/hero.png"
  },
  "files": [
    "page.json",
    "README.md",
    "ap2310.kicad_sym",
    "ap2310.kicad_mod",
    "ap2310.glb",
    "ap2310.step",
    "ap2310.lbr",
    "docs/hero.png",
    "docs/ap2310-datasheet.pdf",
    "viewers/symbol.html",
    "viewers/footprint.html",
    "ap2310-hero.glb",
    "ap2310-hero.overlay.json"
  ],
  "component": {
    "mpn": "AP2310",
    "manufacturer": "ALLPOWER ShenZhen Quan Li Semiconductor",
    "package": "SOT-23-3L",
    "pin_count": 3,
    "category": "Transistors/Thyristors",
    "subcategory": "MOSFETs",
    "datasheet": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588906608793018368",
    "parts": {
      "symbol": "ap2310.kicad_sym",
      "footprint": "ap2310.kicad_mod",
      "model_3d": "ap2310-hero.glb",
      "model_3d_plain": "ap2310.glb",
      "model_3d_step": "ap2310-etched.step",
      "model_3d_step_plain": "ap2310.step",
      "lbr": "ap2310.lbr"
    },
    "distributor_links": {
      "lcsc": "C353087"
    },
    "distributor_check": {
      "checked_at": "2026-10-09T14:58:07Z",
      "source": "Component Ocean /api/assign-pns",
      "digikey": {
        "pn": null,
        "status": "no match"
      },
      "mouser": {
        "pn": null,
        "status": "no match"
      }
    },
    "pins": [
      {
        "number": "1",
        "name": "G",
        "type": "input",
        "description": "Gate of the N-channel MOSFET; VGS rated ±20 V max, with threshold VGS(th) 1.2 V min, 1.7 V typ, 2.5 V max at VDS=VGS, ID=250 µA."
      },
      {
        "number": "2",
        "name": "S",
        "type": "passive",
        "description": "Source of the N-channel MOSFET; body diode forward current IS is 3.0 A max and diode forward voltage 1.2 V max at IS=3 A."
      },
      {
        "number": "3",
        "name": "D",
        "type": "passive",
        "description": "Drain of the N-channel MOSFET; VDS rated 60 V max, continuous ID 3 A at 25°C and pulsed IDM 12 A, with RDS(on) 80 mΩ max at VGS=10 V."
      }
    ],
    "provenance": {
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      "factory_chain": {
        "factory": "2.0.0",
        "extractor": "extract_pins 0.3",
        "primary_model": "claude-sonnet-5-5",
        "primary_mode": "vision",
        "consensus_model": "claude-opus-5-5",
        "consensus": "agreed",
        "guards": "pin_guards 0.1: passed",
        "guard_notes": [
          "vision extraction: provenance cannot be text-verified; needs consensus"
        ],
        "pages_sent": 5,
        "cost_usd": 0.1964,
        "at": "2026-10-09T14:53:58"
      },
      "datasheet": {
        "url": "https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588906608793018368",
        "pages": 5,
        "sha256": "bf605bcb401520e6",
        "source_tier": "lcsc"
      },
      "cad": "KiCad official (CC-BY-SA 4.0)",
      "pins": {
        "total": 3,
        "described": 3,
        "cites_pages": true,
        "refuses_to_fabricate": true
      }
    },
    "viewers": {
      "symbol": "viewers/symbol.html",
      "footprint": "viewers/footprint.html"
    },
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        "units": "mm",
        "origin": "footprint origin = pad-pattern centre",
        "seat": "z = 0",
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        "zmin_mm": 0.0,
        "centre_offset_mm": 0.0,
        "footprint_binding": "identity",
        "sha256": "16964b14f93e6c778288a0c110b35f670fab733109c26f0da7dfc07cc3350040",
        "checked": "2026-10-09",
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      },
      {
        "file": "ap2310-etched.step",
        "role": "eda",
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        "seat": "z = 0",
        "extents_mm": [
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        "checked": "2026-10-09",
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  }
}