# AP2305GN-HF-VB

**VBsemi Elec** · MOSFETs · SOT-23(TO-236)

AP2305GN-HF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

## Pinout

| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; the gate-source voltage VGS is rated at ±12 V in the absolute maximum ratings. |
| 2 | S | passive | Source terminal; the source-drain body diode continuous current IS is rated at -2.1 A at TC = 25 °C, with a pulsed diode forward current ISM of -10 A. |
| 3 | D | passive | Drain terminal; the drain-source voltage VDS is rated at -20 V, with continuous drain current ID of -4 A at TC = 25 °C. |

## Key specifications

| Parameter | Value |
|---|---|
| Manufacturer | VBsemi Elec |
| Package | SOT-23(TO-236) |
| Category | Transistors/Thyristors |
| Pins | 3 |

## Electrical characteristics

Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).

| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS |  |  | -20 | V |  | 1 |
| Gate-Source Voltage | VGS | -12 |  | 12 | V |  | 1 |
| Continuous Drain Current | ID |  |  | -4 | A | TC = 25 °C (TJ = 150 °C) | 1 |
| Continuous Drain Current | ID |  |  | -3.2 | A | TC = 70 °C | 1 |
| Continuous Drain Current | ID |  |  | -3.5 | A | Tb,A = 25 °C (note c) | 1 |
| Continuous Drain Current | ID |  |  | -2.5 | A | Tb,A = 70 °C (note c) | 1 |
| Pulsed Drain Current | IDM |  |  | -10 | A |  | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | -2.1 | A | TC = 25 °C | 1 |
| Continuous Source-Drain Diode Current | IS |  |  | -1 | A | Tb,A = 25 °C (note c) | 1 |
| Maximum Power Dissipation | PD |  |  | 2.5 | W | TC = 25 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.6 | W | TC = 70 °C | 1 |
| Maximum Power Dissipation | PD |  |  | 1.25 | W | Tb,A = 25 °C (note c) | 1 |
| Maximum Power Dissipation | PD |  |  | 0.8 | W | Tb,A = 70 °C (note c) | 1 |
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 |  | 150 | °C |  | 1 |
| Maximum Junction-to-Ambient | RthJA |  | 75 | 100 | °C/W | t = 5 s (notes b, c) | 1 |
| Maximum Junction-to-Foot (Drain) | RthJF |  | 40 | 50 | °C/W | Steady state | 1 |
| Maximum Junction-to-Ambient | RthJA |  |  | 166 | °C/W | Steady state (note d) | 1 |
| Drain-Source Breakdown Voltage | VDS | -20 |  |  | V | VDS = 0 V, ID = -250 µA | 2 |
| VDS Temperature Coefficient | VDS/TJ |  | 13.4 |  | mV/°C | ID = -250 µA | 2 |
| VGS(th) Temperature Coefficient | VGS(th)/TJ |  | 2.9 |  |  |  | 2 |
| Gate-Source Threshold Voltage | VGS(th) | -0.5 |  | -1.5 | V | VDS = VGS, ID = -250 µA | 2 |
| Gate-Source Leakage | IGSS | -100 |  | 100 | nA | VDS = 0 V, VGS = ±12 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -1 | µA | VDS = -20 V, VGS = 0 V | 2 |
| Zero Gate Voltage Drain Current | IDSS |  |  | -10 | µA | VDS = -20 V, VGS = 0 V, TJ = 55 °C | 2 |
| On-State Drain Current | ID(on) | -10 |  |  | A | VDS = -5 V, VGS = -4.5 V | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.06 | Ω | VGS = -10 V, ID = -3 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.065 | Ω | VGS = -4.5 V, ID = -2.5 A | 2 |
| Drain-Source On-State Resistance | RDS(on) |  |  | 0.08 | Ω | VGS = -2.5 V, ID = -2 A | 2 |
| Gate Resistance | Rg | 0.9 | 4.4 | 8.8 | Ω | f = 1 MHz | 2 |
| Turn-On Delay Time | td(on) |  | 22 | 33 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Rise Time | tr |  | 20 | 30 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Turn-Off Delay Time | td(off) |  | 28 | 42 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Fall Time | tf |  | 9 | 18 | ns | VDD = -10 V, RL = 2.4, ID = -3.1 A, VGEN = -4.5 V, Rg = 1 | 2 |
| Continuous Source-Drain Diode Current | IS |  |  | -2.1 | A | TC = 25 °C | 2 |
| Pulse Diode Forward Current | ISM |  |  | -10 | A |  | 2 |
| Body Diode Voltage | VSD |  | -0.8 | -1.2 | V | IS = -3.1 A | 2 |
| Body Diode Reverse Recovery Time | trr |  | 23 | 35 | ns | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |
| Body Diode Reverse Recovery Charge | Qrr |  | 12 | 20 | nC | IF = -3.1 A, dI/dt = 100 A/µs, TJ = 25 °C | 2 |

## CAD (land: KiCad; 3D: generated from the datasheet)

- Symbol: `AP2305GN-HF-VB`
- Footprint: `Package_TO_SOT_SMD:SOT-23`
- 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
- 3D model files: `ap2305gn-hf-vb-etched.step` / `ap2305gn-hf-vb-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap2305gn-hf-vb.step` / `ap2305gn-hf-vb.glb` are the bare package body.

## Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

- **Datasheet:** [VBsemi Elec datasheet](docs/ap2305gn-hf-vb-datasheet.pdf) (9 pp, sha256 `2368b185a9ab11db`, retrieved 2026-11-13, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

[Datasheet PDF](docs/ap2305gn-hf-vb-datasheet.pdf)