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AP2305AGN

APEC(Advanced Power Elec) · MOSFETs · SOT-23

AP2305AGN from APEC(Advanced Power Elec), in a SOT-23. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drive with VGS limited to ±12V, with threshold VGS(th) of -0.5V to -1.2V at ID=-250uA.
2 S passive Source of the P-channel MOSFET; the datasheet gives the drain-source voltage as -30V maximum and continuous drain current as -3.2A at TA=25℃.
3 D passive Drain of the P-channel MOSFET; the datasheet gives the drain-source voltage as -30V maximum and continuous drain current as -3.2A at TA=25℃.

Key specifications

Parameter Value
Manufacturer APEC(Advanced Power Elec)
Package SOT-23
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -30 V 1
Gate-Source Voltage VGS -12 12 V 1
Continuous Drain Current ID@TA=25℃ -3.2 A TA=25℃, surface mounted on 1 in2 pad 1
Continuous Drain Current ID@TA=70℃ -2.6 A TA=70℃, surface mounted on 1 in2 pad 1
Pulsed Drain Current IDM -10 A 1
Total Power Dissipation PD@TA=25℃ 1.38 W TA=25℃ 1
Linear Derating Factor 0.01 W/℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Maximum Thermal Resistance, Junction-ambient Rthj-amb 90 ℃/W Surface mounted on 1 in2 copper pad of FR4 board 1
Maximum Thermal Resistance, Junction-ambient (min pad) Rthj-amb 270 ℃/W when mounted on min. copper pad 2
Drain-Source Breakdown Voltage BVDSS -30 V VGS=0V, ID=-250uA 2
Static Drain-Source On-Resistance RDS(ON) 60 mΩ VGS=-10V, ID=-3.2A 2
Static Drain-Source On-Resistance RDS(ON) 80 mΩ VGS=-4.5V, ID=-3.0A 2
Static Drain-Source On-Resistance RDS(ON) 150 mΩ VGS=-2.5V, ID=-2.0A 2
Gate Threshold Voltage VGS(th) -0.5 -1.2 V VDS=VGS, ID=-250uA 2
Drain-Source Leakage Current IDSS -1 uA VDS=-30V, VGS=0V 2
Drain-Source Leakage Current (Tj=70C) IDSS -25 uA VDS=-24V, VGS=0V 2
Gate-Source Leakage IGSS -100 100 nA VGS=±12V 2
Total Gate Charge Qg 10 18 nC ID=-3.2A, VDS=-24V, VGS=-4.5V 2
Input Capacitance Ciss 735 1325 pF VGS=0V, VDS=-25V, f=1.0MHz 2
Forward On Voltage VSD -1.2 V IS=-1.2A, VGS=0V 2
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj -0.1 V/℃ Reference to 25℃, ID=-1mA 2
Forward Transconductance gfs 9 S VDS=-5V, ID=-3.0A 2
Gate-Source Charge Qgs 1.8 nC ID=-3.2A, VDS=-24V, VGS=-4.5V 2
Gate-Drain Charge Qgd 3.6 nC ID=-3.2A, VDS=-24V, VGS=-4.5V 2
Turn-on Delay Time td(on) 7 ns VDS=-15V, ID=-3.2A, RG=3.3Ω, VGS=-10V, RD=4.6Ω 2
Rise Time tr 15 ns VDS=-15V, ID=-3.2A, RG=3.3Ω, VGS=-10V, RD=4.6Ω 2
Turn-off Delay Time td(off) 21 ns VDS=-15V, ID=-3.2A, RG=3.3Ω, VGS=-10V, RD=4.6Ω 2
Fall Time tf 15 ns VDS=-15V, ID=-3.2A, RG=3.3Ω, VGS=-10V, RD=4.6Ω 2
Output Capacitance Coss 100 pF VGS=0V, VDS=-25V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 80 pF VGS=0V, VDS=-25V, f=1.0MHz 2
Reverse Recovery Time trr 24 ns IS=-3.2A, VGS=0V, dI/dt=100A/µs 2
Reverse Recovery Charge Qrr 19 nC IS=-3.2A, VGS=0V, dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AP2305AGN
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23 (KiCad packages3D, STEP)
  • 3D model files: ap2305agn-etched.step / ap2305agn-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap2305agn.step / ap2305agn.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC(Advanced Power Elec) datasheet (5 pp, sha256 45a866b5bf1134d1, retrieved 2026-10-22, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF