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AP2301GN-HF-VB

Public Made by Adom

by adom

VBsemi Elec MOSFETs, SOT-23(TO-236). Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorap2301gn-hf-vbfactory-2.0.0extractor-text

Verified AP2301GN-HF-VB

by Ray · last 13 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

13 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • •array (skip): not an array of element pairs
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AP2301GN-HF-VB · SOT-23(TO-236) · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 9-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: SOT-23
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-hy88270n/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: height and body within the datasheet's package drawing (datasheet p.7)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 17 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ap2301gn-hf-vb.kicad_sym✓ ap2301gn-hf-vb.kicad_mod✓ ap2301gn-hf-vb.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
Name Last commit message Last updated
docs Publish 0.1.0 · Ray
viewers ap2301gn-hf-vb: viewers rendered from the public page · Ray
ap2301gn-hf-vb-etched.glb ap2301gn-hf-vb: factory component page (tier=lcsc) · Ray
ap2301gn-hf-vb-etched.step ap2301gn-hf-vb: factory component page (tier=lcsc) · Ray
ap2301gn-hf-vb-hero.glb ap2301gn-hf-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
ap2301gn-hf-vb-hero.overlay.json ap2301gn-hf-vb: hero GLB from the etched model (keeps the MPN mark) · Ray
ap2301gn-hf-vb.glb Publish 0.1.0 · Ray
ap2301gn-hf-vb.kicad_mod Publish 0.1.0 · Ray
ap2301gn-hf-vb.kicad_sym Publish 0.1.0 · Ray
ap2301gn-hf-vb.lbr Publish 0.1.0 · Ray
ap2301gn-hf-vb.step Publish 0.1.0 · Ray
package.json Publish 0.1.0 · Ray
page.json Set visibility: public · Ray
README.md Publish 0.1.0 · Ray
verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

AP2301GN-HF-VB

VBsemi Elec · MOSFETs · SOT-23(TO-236)

AP2301GN-HF-VB from VBsemi Elec, in a SOT-23(TO-236). Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol and footprint from KiCad-official CAD; the 3D model is generated from the datasheet's package dimensions.

Pinout

Pin Name Type Function
1 G input Gate of the P-channel MOSFET; gate-source voltage is rated at ±12 V (absolute maximum).
2 S passive Source of the MOSFET; continuous source-drain diode current is rated at -2.1 A at TC = 25 °C and pulsed diode forward current at -10 A.
3 D passive Drain of the MOSFET; drain-source voltage is rated at -20 V with continuous drain current of -4 A at TC = 25 °C (package limited).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package SOT-23(TO-236)
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage VDS -20 V VDS = 0 V, ID = - 250 µA 2
Gate-Source Threshold Voltage VGS(th) -0.5 -1.5 V VDS = VGS, ID = - 250 µA 2
Gate-Source Leakage IGSS 100 nA VDS = 0 V, VGS = ± 12 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = - 20 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -10 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) -10 A VDS ≤ - 5 V, VGS = - 4.5 V 2
Drain-Source On-State Resistance RDS(on) 0.06 Ω VGS = - 10 V, ID = - 3 A 2
Drain-Source On-State Resistance RDS(on) 0.065 Ω VGS = - 4.5 V, ID = - 2.5 A 2
Drain-Source On-State Resistance RDS(on) 0.08 Ω VGS = - 2.5 V, ID = - 2 A 2
Gate Resistance Rg 0.9 4.4 8.8 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 22 33 ns VDD = - 10 V, RL = 2.4 Ω, ID = - 3.1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Rise Time tr 20 30 ns VDD = - 10 V, RL = 2.4 Ω, ID = - 3.1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 28 42 ns VDD = - 10 V, RL = 2.4 Ω, ID = - 3.1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = - 10 V, RL = 2.4 Ω, ID = - 3.1 A, VGEN = - 4.5 V, Rg = 1 Ω 2
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 2
Pulse Diode Forward Current ISM -10 A 2
Body Diode Voltage VSD -0.8 -1.2 V IS = - 3.1 A 2
Body Diode Reverse Recovery Time trr 23 35 ns IF = - 3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 12 20 nC IF = - 3.1 A, dI/dt = 100 A/µs, TJ = 25 °C 2
Drain-Source Voltage VDS -20 V TA = 25 °C 1
Gate-Source Voltage VGS -12 12 V TA = 25 °C 1
Continuous Drain Current ID -4 A TJ = 150 °C, TC = 25 °C 1
Continuous Drain Current ID -3.2 A TJ = 150 °C, TC = 70 °C 1
Continuous Drain Current ID -3.5 A TJ = 150 °C, TA = 25 °C 1
Continuous Drain Current ID -2.5 A TJ = 150 °C, TA = 70 °C 1
Pulsed Drain Current IDM -10 A 1
Continuous Source-Drain Diode Current IS -2.1 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS -1 A TA = 25 °C 1
Maximum Power Dissipation PD 2.5 W TC = 25 °C 1
Maximum Power Dissipation PD 1.6 W TC = 70 °C 1
Maximum Power Dissipation PD 1.25 W TA = 25 °C 1
Maximum Power Dissipation PD 0.8 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Maximum Junction-to-Ambient RthJA 75 100 °C/W t = 5 s, surface mounted on 1" x 1" FR4 board 1
Maximum Junction-to-Foot (Drain) RthJF 40 50 °C/W Steady State 1
VDS Temperature Coefficient ΔVDS/TJ 13.4 mV/°C ID = - 250 µA 2
VGS(th) Temperature Coefficient ΔVGS(th)/TJ 2.9 mV/°C ID = - 250 µA 2
Forward Transconductance gfs 15 S VDS = - 5 V, ID = - 3 A 2
Input Capacitance Ciss 835 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Output Capacitance Coss 180 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 155 pF VDS = - 10 V, VGS = 0 V, f = 1 MHz 2
Total Gate Charge Qg 10 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 3.1 A 2
Total Gate Charge Qg 6.4 nC VDS = - 10 V, VGS = - 2.5 V, ID = - 3.1 A 2
Gate-Source Charge Qgs 1.7 nC 2
Gate-Drain Charge Qgd 3.4 nC 2

CAD (land: KiCad; 3D: generated from the datasheet)

  • Symbol: AP2301GN-HF-VB
  • Footprint: Package_TO_SOT_SMD:SOT-23
  • 3D model: SOT-23(TO-236), generated on the KiCad land (body 1.3 x 2.92 mm, terminals on the pads, 1.0050000000000001 mm tall, datasheet A, midpoint of min and max). KiCad's stock model for this land is taller than the datasheet allows, so the model is generated from the datasheet drawing; the dimensions come from the datasheet drawing where it was read and are defaults otherwise (see provenance.model_3d_generated), not the manufacturer's CAD (STEP)
  • 3D model files: ap2301gn-hf-vb-etched.step / ap2301gn-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap2301gn-hf-vb.step / ap2301gn-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (9 pp, sha256 021cbacc54e99381, retrieved 2026-11-13, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: land: KiCad official libraries (CC-BY-SA 4.0); 3D: generated from the datasheet's package dimensions (provenance.model_3d_generated).

Datasheet PDF