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AP20N15AGH-HF
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APEC Advanced Power Elec MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.
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AP20N15AGH-HF
APEC Advanced Power Elec · MOSFETs · TO-252
AP20N15AGH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V, and the gate threshold is 1 to 3 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain terminal; drain-source breakdown voltage is 150 V minimum, and continuous drain current is 20.5 A at TC=25°C (13 A at TC=100°C per the rating table), with 80 A pulsed. |
| 3 | S | passive | Source terminal; source-drain diode forward voltage is 1.3 V maximum at IS=10A, VGS=0V. |
Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
Electrical characteristics
Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | V | VGS=0V, ID=250uA | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 100 | mΩ | VGS=10V, ID=10A | 2 | ||
| Static Drain-Source On-Resistance | RDS(ON) | 110 | mΩ | VGS=4.5V, ID=6A | 2 | ||
| Gate Threshold Voltage | VGS(th) | 1 | 3 | V | VDS=VGS, ID=250uA | 2 | |
| Drain-Source Leakage Current | IDSS | 25 | uA | VDS=120V, VGS=0V | 2 | ||
| Gate-Source Leakage | IGSS | 100 | nA | VGS=+20V, VDS=0V | 2 | ||
| Total Gate Charge | Qg | 17.5 | 28 | nC | ID=14A | 2 | |
| Input Capacitance | Ciss | 1600 | 2560 | pF | VGS=0V | 2 | |
| Gate Resistance | Rg | 1.2 | 2.4 | Ω | f=1.0MHz | 2 | |
| Forward On Voltage | VSD | 1.3 | V | IS=10A, VGS=0V | 2 | ||
| Drain-Source Voltage | VDS | 150 | V | 1 | |||
| Gate-Source Voltage | VGS | 20 | V | 1 | |||
| Drain Current, continuous at TC=25℃ | ID@TC=25℃ | 20.5 | A | VGS @ 10V | 1 | ||
| Drain Current, continuous at TC=100℃ | ID@TC=100℃ | 13 | A | VGS @ 10V | 1 | ||
| Pulsed Drain Current | IDM | 80 | A | Pulse width limited by max. junction temperature (note 1) | 1 | ||
| Total Power Dissipation | PD@TC=25℃ | 89.2 | W | 1 | |||
| Storage Temperature Range | TSTG | -55 | 150 | ℃ | 1 | ||
| Operating Junction Temperature Range | TJ | -55 | 150 | ℃ | 1 | ||
| Maximum Thermal Resistance, Junction-case | Rthj-c | 1.4 | ℃/W | 1 | |||
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | 62.5 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board (note 3) | 1 |
CAD (KiCad official)
- Symbol:
AP20N15AGH-HF - Footprint:
Package_TO_SOT_SMD:TO-252-2 - 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files:
ap20n15agh-hf-etched.step/ap20n15agh-hf-etched.glbcarry the MPN laser-etched on the die in a toggleableAdom.LaserEtchgroup (Fusion-ready);ap20n15agh-hf.step/ap20n15agh-hf.glbare the bare package body.
Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- Datasheet: APEC Advanced Power Elec datasheet (5 pp, sha256
b477798f7aa35084, retrieved 2026-10-18, tier: lcsc) - Extractor: parts-factory
2.0.0/extract_pins 0.3, primaryclaude-haiku-5-5(text), consensusclaude-sonnet-5-5(agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish. - CAD: KiCad official libraries (CC-BY-SA 4.0).
# AP20N15AGH-HF
**APEC Advanced Power Elec** · MOSFETs · TO-252
AP20N15AGH-HF from APEC Advanced Power Elec, in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.
## Pinout
| Pin | Name | Type | Function |
|---|---|---|---|
| 1 | G | input | Gate terminal; gate-source voltage is rated ±20 V, and the gate threshold is 1 to 3 V at VDS=VGS, ID=250µA. |
| 2 | D | passive | Drain terminal; drain-source breakdown voltage is 150 V minimum, and continuous drain current is 20.5 A at TC=25°C (13 A at TC=100°C per the rating table), with 80 A pulsed. |
| 3 | S | passive | Source terminal; source-drain diode forward voltage is 1.3 V maximum at IS=10A, VGS=0V. |
## Key specifications
| Parameter | Value |
|---|---|
| Manufacturer | APEC Advanced Power Elec |
| Package | TO-252 |
| Category | Transistors/Thyristors |
| Pins | 3 |
## Electrical characteristics
Limits as printed in the datasheet (page.json `metadata.characteristics` carries them as data).
| Parameter | Symbol | Min | Typ | Max | Unit | Conditions | Page |
|---|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | 150 | | | V | VGS=0V, ID=250uA | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 100 | mΩ | VGS=10V, ID=10A | 2 |
| Static Drain-Source On-Resistance | RDS(ON) | | | 110 | mΩ | VGS=4.5V, ID=6A | 2 |
| Gate Threshold Voltage | VGS(th) | 1 | | 3 | V | VDS=VGS, ID=250uA | 2 |
| Drain-Source Leakage Current | IDSS | | | 25 | uA | VDS=120V, VGS=0V | 2 |
| Gate-Source Leakage | IGSS | | | 100 | nA | VGS=+20V, VDS=0V | 2 |
| Total Gate Charge | Qg | | 17.5 | 28 | nC | ID=14A | 2 |
| Input Capacitance | Ciss | | 1600 | 2560 | pF | VGS=0V | 2 |
| Gate Resistance | Rg | | 1.2 | 2.4 | Ω | f=1.0MHz | 2 |
| Forward On Voltage | VSD | | | 1.3 | V | IS=10A, VGS=0V | 2 |
| Drain-Source Voltage | VDS | | | 150 | V | | 1 |
| Gate-Source Voltage | VGS | | | 20 | V | | 1 |
| Drain Current, continuous at TC=25℃ | ID@TC=25℃ | | | 20.5 | A | VGS @ 10V | 1 |
| Drain Current, continuous at TC=100℃ | ID@TC=100℃ | | | 13 | A | VGS @ 10V | 1 |
| Pulsed Drain Current | IDM | | | 80 | A | Pulse width limited by max. junction temperature (note 1) | 1 |
| Total Power Dissipation | PD@TC=25℃ | | | 89.2 | W | | 1 |
| Storage Temperature Range | TSTG | -55 | | 150 | ℃ | | 1 |
| Operating Junction Temperature Range | TJ | -55 | | 150 | ℃ | | 1 |
| Maximum Thermal Resistance, Junction-case | Rthj-c | | | 1.4 | ℃/W | | 1 |
| Maximum Thermal Resistance, Junction-ambient (PCB mount) | Rthj-a | | | 62.5 | ℃/W | Surface mounted on 1 in2 copper pad of FR4 board (note 3) | 1 |
## CAD (KiCad official)
- Symbol: `AP20N15AGH-HF`
- Footprint: `Package_TO_SOT_SMD:TO-252-2`
- 3D model: TO-252 (KiCad packages3D, STEP)
- 3D model files: `ap20n15agh-hf-etched.step` / `ap20n15agh-hf-etched.glb` carry the MPN laser-etched on the die in a toggleable `Adom.LaserEtch` group (Fusion-ready); `ap20n15agh-hf.step` / `ap20n15agh-hf.glb` are the bare package body.
## Provenance
Data extracted from the manufacturer datasheet, not a distributor listing:
- **Datasheet:** [APEC Advanced Power Elec datasheet](https://jlcpcb.com/api/file/downloadByFileSystemAccessId/8588903876817141760) (5 pp, sha256 `b477798f7aa35084`, retrieved 2026-10-18, tier: lcsc)
- **Extractor:** parts-factory `2.0.0` / `extract_pins 0.3`, primary `claude-haiku-5-5` (text), consensus `claude-sonnet-5-5` (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
- **CAD:** KiCad official libraries (CC-BY-SA 4.0).
[Datasheet PDF](docs/ap20n15agh-hf-datasheet.pdf)