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AP200N04D

ALLPOWER(ShenZhen Quan Li Semiconductor) · MOSFETs · TO-263

AP200N04D from ALLPOWER(ShenZhen Quan Li Semiconductor), in a TO-263. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; drives the N-channel enhancement MOSFET with VGS rated ±20 V and RDS(on) specified at VGS = 10 V and 4.5 V.
2 D passive Drain; connected to the TO-263 tab, rated VDS 40 V and 160 A continuous at Ta = 25 °C.
3 S passive Source; the current return of the MOSFET, with a body diode to drain rated 160 A and VSD max 1.2 V at Is = 10 A.

Key specifications

Parameter Value
Manufacturer ALLPOWER(ShenZhen Quan Li Semiconductor)
Package TO-263
Category Transistors/Thyristors
Pins 3

CAD (KiCad official)

  • Symbol: AP200N04D
  • Footprint: Package_TO_SOT_SMD:TO-263-2
  • 3D model: TO-263 (KiCad packages3D, STEP)
  • 3D model files: ap200n04d-etched.step / ap200n04d-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap200n04d.step / ap200n04d.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: ALLPOWER(ShenZhen Quan Li Semiconductor) datasheet (8 pp, sha256 3ef561a0891d7721, retrieved 2026-11-05, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF