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AP18P10GI-VB

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VBsemi Elec MOSFETs, TO-220F. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttransistors-thyristorsap18p10gi-vbfactory-2.0.0extractor-text

Verified AP18P10GI-VB

by Ray · last 12 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

12 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AP18P10GI-VB · TO-220F · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 7-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220F-3_Vertical
  • ✓files: 6 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-sqvdr42e/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 1 records
  • ✓package_fit: thickness within the datasheet's package drawing (vertical TO package); standing height not judged: the drawing read gives no overall height (H, H1 or L) (datasheet p.6)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 1 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 16 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ap18p10gi-vb.kicad_sym✓ ap18p10gi-vb.kicad_mod✓ ap18p10gi-vb.step
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Made with kicad-footprint-generator 10.0 · KiCad file format 20260206
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verification.json Verified: Published by the parts factory: tier lcsc, 3 pins · Ray

AP18P10GI-VB

VBsemi Elec · MOSFETs · TO-220F

AP18P10GI-VB from VBsemi Elec, in a TO-220F. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model). Symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate terminal; gate-source voltage VGS is rated ±20 V (absolute maximum).
2 D passive Drain terminal; drain-source voltage is rated −100 V and continuous drain current is −12 A at TC = 25 °C (−8.6 A at TC = 70 °C).
3 S passive Source terminal; reference for VGS, with body-diode continuous current IS rated −8.8 A at TC = 25 °C.

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package TO-220F
Category Transistors/Thyristors
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS -100 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID -12 A TC = 25 °C (TJ = 150 °C) 1
Continuous Drain Current ID -8.6 A TC = 70 °C 1
Pulsed Drain Current IDM -36 A 1
Avalanche Current IAS -18 A 1
Single Avalanche Energy EAS 16.2 mJ L = 0.1 mH 1
Maximum Power Dissipation PD 38.1 W TC = 25 °C 1
Maximum Power Dissipation PD 2.5 W TA = 25 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 150 °C 1
Junction-to-Ambient Thermal Resistance (PCB Mount) RthJA 50 °C/W PCB mount 1
Junction-to-Case (Drain) Thermal Resistance RthJC 3.9 °C/W 1
Drain-Source Breakdown Voltage VDS -100 V VDS = 0 V, ID = -250 µA 2
Gate Threshold Voltage VGS(th) -1 -2.5 V VDS = VGS, ID = -250 µA 2
Gate-Body Leakage IGSS -250 250 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS -1 µA VDS = -100 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS -50 µA VDS = -100 V, VGS = 0 V, TJ = 125 °C 2
Zero Gate Voltage Drain Current IDSS -250 µA VDS = -100 V, VGS = 0 V, TJ = 150 °C 2
On-State Drain Current ID(on) -15 A VDS ≤ -10 V, VGS = -10 V 2
Drain-Source On-State Resistance RDS(on) 0.22 Ω VGS = -10 V, ID = -3.6 A 2
Drain-Source On-State Resistance RDS(on) 0.23 Ω VGS = -4.5 V, ID = -3.4 A 2
Total Gate Charge Qg 23.2 34.8 nC VDS = -50 V, VGS = -10 V, ID = -3.6 A 2
Total Gate Charge Qg 11.7 17.6 nC VDS = -50 V, VGS = -4.5 V, ID = -3.6 A 2
Gate Resistance Rg 1.2 5.7 11.5 Ω f = 1 MHz 2
Rise Time tr 12 18 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 33 50 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Fall Time tf 9 18 ns VDD = -50 V, RL = 17.2 Ω, ID ≅ -2.9 A, VGEN = -10 V, Rg = 1 Ω 2
Continuous Current (Body Diode) IS -8.8 A TC = 25 °C 2
Pulsed Current (Body Diode) ISM -15 A 2
Forward Voltage VSD -0.8 -1.5 V IF = -2.9 A, VGS = 0 V 2
Reverse Recovery Time trr 50 75 ns IF = -2.9 A, dI/dt = 100 A/µs 2
Peak Reverse Recovery Current IRM(REC) -4 -6 A 2
Reverse Recovery Charge Qrr 98 147 nC 2
Forward Transconductance gfs 12 S VDS = -15 V, ID = -3.6 A 2
Input Capacitance Ciss 1055 pF VGS = 0 V, VDS = -50 V, f = 1 MHz 2
Output Capacitance Coss 65 pF VGS = 0 V, VDS = -50 V, f = 1 MHz 2
Reverse Transfer Capacitance Crss 41 pF VGS = 0 V, VDS = -50 V, f = 1 MHz 2
Gate-Source Charge Qgs 3.5 nC 2
Gate-Drain Charge Qgd 4.8 nC 2

CAD (KiCad official)

  • Symbol: AP18P10GI-VB
  • Footprint: Package_TO_SOT_THT:TO-220F-3_Vertical
  • 3D model: TO-220F (KiCad packages3D, STEP)

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 26a358ad43311970, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-haiku-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF