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AP18N20GH

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APEC(Advanced Power Elec) MOSFETs, TO-252. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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AP18N20GH

APEC(Advanced Power Elec) · MOSFETs · TO-252

AP18N20GH from APEC(Advanced Power Elec), in a TO-252. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage is rated at ±20 V maximum, with a gate threshold of 2 to 4 V at ID=250uA.
2 D passive Drain (also connected to the tab); drain-source voltage is rated at 200 V and continuous drain current is 18 A at TC=25℃.
3 S passive Source; carries the drain current of up to 18 A at TC=25℃, with a body-diode forward voltage of 1.3 V max at IS=10A.

Key specifications

Parameter Value
Manufacturer APEC(Advanced Power Elec)
Package TO-252
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage BVDSS 200 V VGS=0V, ID=250uA 2
Static Drain-Source On-Resistance RDS(ON) 170 mΩ VGS=10V, ID=8A 2
Gate Threshold Voltage VGS(th) 2 4 V VDS=VGS, ID=250uA 2
Drain-Source Leakage Current IDSS 10 uA VDS=200V, VGS=0V 2
Gate-Source Leakage IGSS 100 nA VGS=+20V, VDS=0V 2
Total Gate Charge Qg 19 30 nC ID=10A, VDS=160V, VGS=10V 2
Input Capacitance Ciss 1065 1700 pF VGS=0V, VDS=25V, f=1.0MHz 2
Gate Resistance Rg 1.6 2.4 Ω f=1.0MHz 2
Forward On Voltage VSD 1.3 V IS=10A, VGS=0V 2
Drain-Source Voltage VDS 200 V 1
Gate-Source Voltage VGS -20 20 V 1
Drain Current, VGS @ 10V ID@TC=25℃ 18 A TC=25℃ 1
Drain Current, VGS @ 10V ID@TC=100℃ 9.5 A TC=100℃ 1
Pulsed Drain Current IDM 60 A 1
Total Power Dissipation PD@TC=25℃ 89 W TC=25℃ 1
Linear Derating Factor 0.7 W/℃ 1
Total Power Dissipation PD@TA=25℃ 2 W TA=25℃ 1
Storage Temperature Range TSTG -55 150 ℃ 1
Operating Junction Temperature Range TJ -55 150 ℃ 1
Thermal Resistance, Junction-case Rthj-c 1.4 ℃/W Maximum 1
Thermal Resistance, Junction-ambient (PCB mount) Rthj-a 62.5 ℃/W Surface mounted on 1 in2 copper pad of FR4 board 1
Thermal Resistance, Junction-ambient Rthj-a 110 ℃/W Maximum 1
Breakdown Voltage Temperature Coefficient ΔBVDSS/ΔTj 0.25 V/℃ Reference to 25℃, ID=1mA 2
Forward Transconductance gfs 9.5 S VDS=10V, ID=10A 2
Gate-Source Charge Qgs 5 nC VDS=160V 2
Gate-Drain (Miller) Charge Qgd 6 nC VGS=10V 2
Turn-on Delay Time td(on) 9 ns VDD=100V 2
Rise Time tr 21 ns ID=11A 2
Turn-off Delay Time td(off) 25 ns RG=9.1Ω 2
Fall Time tf 19 ns VGS=10V 2
Output Capacitance Coss 185 pF VDS=25V 2
Reverse Transfer Capacitance Crss 3 pF f=1.0MHz 2
Reverse Recovery Time trr 180 ns IS=10A, VGS=0V 2
Reverse Recovery Charge Qrr 1150 nC dI/dt=100A/µs 2

CAD (KiCad official)

  • Symbol: AP18N20GH
  • Footprint: Package_TO_SOT_SMD:TO-252-2
  • 3D model: TO-252 (KiCad packages3D, STEP)
  • 3D model files: ap18n20gh-etched.step / ap18n20gh-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap18n20gh.step / ap18n20gh.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: APEC(Advanced Power Elec) datasheet (5 pp, sha256 8e0d6fda16f4dcd5, retrieved 2026-10-23, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text), consensus claude-sonnet-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF