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AP120N06P

Public Made by Adom

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A Power microelectronics MOSFETs, TO-220-3L. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

componenttriode-mos tube-transistorap120n06pfactory-2.0.0extractor-text

Verified AP120N06P

by Ray · last 12 Nov 2026 · 1 record · files match
SymbolFootprint3D modelPins

Verification log 1 record

12 Nov 2026RayPublished by the parts factory: tier lcsc, 3 pinsfiles match
SymbolFootprint3D modelPinsfor all variants
  • ✓component-page-verify: PASS
  • ✓cad_props: Datasheet, MPN and distributor properties match page.json
  • ✓component: AP120N06P · TO-220-3L · 3 pins
  • ✓copper: 3 copper pads, none touching another net
  • ✓datasheet: all 3 pin names found in the 8-page datasheet
  • •distributor (warn): no ['digikey', 'mouser'] number
  • ✓family: TO-220-3_Vertical
  • ✓files: 7 declared files present
  • ✓hero: docs/hero.png 4000x2500
  • ✓lbr: OK: /tmp/cpv-qt5n_u4i/x.lbr is a valid EAGLE .lbr with complete deviceset
  • ✓license: CC-BY-SA-4.0
  • ✓models_3d: 2 records
  • ✓package_fit: thickness within the datasheet's package drawing (vertical TO package); standing height not judged: the drawing read gives no overall height (H, H1 or L) (datasheet p.5)
  • ✓pads: 3 pins = 3 pads
  • ✓pose: 2 STEP(s) Z-up, seated, centred
  • ✓symbol: 3 pins agree
  • ✓symbol_text: no pin names collide
  • ✓viewers: viewers/footprint.html 16 kB, viewers/symbol.html 8 kB
  • ✓visibility: public, source open
Evidencedatasheet
Verified files✓ ap120n06p.kicad_sym✓ ap120n06p.kicad_mod✓ ap120n06p.step
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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

markdown

AP120N06P

A Power microelectronics · MOSFETs · TO-220-3L

AP120N06P from A Power microelectronics, in a TO-220-3L. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 G input Gate; gate-source voltage limited to ±25 V, threshold 2.0 to 4.0 V, driven at VGS=10 V for RDS(on) below 5.6 mΩ.
2 D passive Drain, also connected to the tab; drain-source voltage 65 V, continuous drain current 125 A, pulsed 492 A.
3 S passive Source; continuous body-diode forward current up to 123 A.

Key specifications

Parameter Value
Manufacturer A Power microelectronics
Package TO-220-3L
Category Triode/MOS Tube/Transistor
Pins 3

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Breakdown Voltage V(BR)DSS 65 72 V VGS=0V, ID=250μA 2
Zero Gate Voltage Drain Current IDSS 1 μA VDS=60V, VGS=0V 2
Gate to Body Leakage Current IGSS -100 100 nA VDS=0V, VGS=±20V 2
Gate Threshold Voltage VGS(th) 2 2.8 4 V VDS=VGS, ID=250μA 2
Static Drain-Source on-Resistance RDS(on) 4.8 5.6 mΩ VGS=10V, ID=55A 2
Maximum Continuous Drain to Source Diode Forward Current IS 123 A 2
Maximum Pulsed Drain to Source Diode Forward Current ISM 492 A 2
Drain to Source Diode Forward Voltage VSD 1.2 V VGS=0V, IS=30A 2
Drain source voltage VDS 65 V Tj=25°C 1
Gate source voltage VGS -25 25 V Tj=25°C 1
Continuous drain current ID 125 A Tj=25°C 1
Pulsed drain current IDM 492 A Tj=25°C 1
Diode forward current IAS 55 A Tj=25°C 1
Power dissipation PD 172 W Tj=25°C 1
Single pulsed avalanche energy EAS 225 mJ Tj=25°C 1
Operation and storage temperature Tstg, Tj -55 150 ℃ 1
Thermal resistance, junction-case RθJC 1.4 ℃/W 1
Thermal resistance, junction-ambient RθJA 62.5 ℃/W 1
Input Capacitance Ciss 3135 pF VDS=30V, VGS=0V, f=1.0MHz 2
Output Capacitance Coss 521 pF VDS=30V, VGS=0V, f=1.0MHz 2
Reverse Transfer Capacitance Crss 306 pF VDS=30V, VGS=0V, f=1.0MHz 2
Total Gate Charge Qg 77 nC VDS=30V, ID=55A, VGS=10V 2
Gate-Source Charge Qgs 18 nC VDS=30V, ID=55A, VGS=10V 2
Gate-Drain Charge Qgd 30 nC VDS=30V, ID=55A, VGS=10V 2
Turn-on Delay Time td(on) 15 ns VDS=30V, ID=55A, RG=1.8Ω, VGS=10V 2
Turn-on Rise Time tr 89 ns VDS=30V, ID=55A, RG=1.8Ω, VGS=10V 2
Turn-off Delay Time td(off) 36 ns VDS=30V, ID=55A, RG=1.8Ω, VGS=10V 2
Turn-off Fall Time tf 91 ns VDS=30V, ID=55A, RG=1.8Ω, VGS=10V 2
Body Diode Reverse Recovery Time trr 32 ns IF=550A, dI/dt=100A/μs 2
Body Diode Reverse Recovery Charge Qrr 31 nC IF=550A, dI/dt=100A/μs 2

CAD (KiCad official)

  • Symbol: AP120N06P
  • Footprint: Package_TO_SOT_THT:TO-220-3_Vertical
  • 3D model: TO-220-3L (KiCad packages3D, STEP)
  • 3D model files: ap120n06p-etched.step / ap120n06p-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap120n06p.step / ap120n06p.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: A Power microelectronics datasheet (8 pp, sha256 8f5d2cee50f4ced0, retrieved 2026-11-12, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF