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AP0504GMT-HF-VB

Public Made by Adom

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VBsemi Elec MOSFETs, DFN5x6-8. Pinout cross-checked by two models against the datasheet, KiCad symbol/footprint/3D.

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3D Model

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Symbol & Footprint

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Datasheet

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Contents

README

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AP0504GMT-HF-VB

VBsemi Elec · MOSFETs · DFN5x6-8

AP0504GMT-HF-VB from VBsemi Elec, in a DFN5x6-8. Pinout and pin descriptions extracted from the manufacturer datasheet (extract_pins, cross-checked by a second model); symbol, footprint, and 3D from KiCad-official CAD.

Pinout

Pin Name Type Function
1 S passive Source terminal of the N-channel MOSFET (pin 1, marked with dot); VDS rated 40 V.
2 S passive Source terminal of the N-channel MOSFET; continuous drain current 70 A at TC = 25 °C (package limit 80 A).
3 S passive Source terminal of the N-channel MOSFET, shared with pins 1 and 2.
4 G input Gate terminal; gate-source voltage limited to ±20 V with threshold of 1.2 V min to 2.5 V max.
5 D passive Drain terminal of the N-channel MOSFET; VDS rated 40 V.
6 D passive Drain terminal of the N-channel MOSFET, shared with pins 5, 7 and 8.
7 D passive Drain terminal of the N-channel MOSFET; pulsed drain current up to 120 A.
8 D passive Drain terminal of the N-channel MOSFET, shared with pins 5, 6 and 7.
9 EP passive Exposed pad (from the footprint; not named in the datasheet pin table).

Key specifications

Parameter Value
Manufacturer VBsemi Elec
Package DFN5x6-8
Category Transistors/Thyristors
Pins 9

Electrical characteristics

Limits as printed in the datasheet (page.json metadata.characteristics carries them as data).

Parameter Symbol Min Typ Max Unit Conditions Page
Drain-Source Voltage VDS 40 V 1
Gate-Source Voltage VGS -20 20 V 1
Continuous Drain Current ID 70 A TC = 25 °C 1
Continuous Drain Current ID 60 A TC = 70 °C 1
Continuous Drain Current ID 19 A TA = 25 °C 1
Continuous Drain Current ID 18.6 A TA = 70 °C 1
Pulsed Drain Current IDM 120 A 1
Single Pulse Avalanche Energy EAS 47.2 mJ L = 0.1 mH 1
Continuous Source-Drain Diode Current IS 70 A TC = 25 °C 1
Continuous Source-Drain Diode Current IS 2.36 A TA = 25 °C 1
Maximum Power Dissipation PD 100 W TC = 25 °C 1
Maximum Power Dissipation PD 55 W TC = 70 °C 1
Maximum Power Dissipation PD 6.15 W TA = 25 °C 1
Maximum Power Dissipation PD 3.07 W TA = 70 °C 1
Operating Junction and Storage Temperature Range TJ, Tstg -55 175 °C 1
Maximum Junction-to-Ambient (t ≤ 10 s) RthJA 47 56 °C/W t ≤ 10 s, surface mounted on 1in x 1in FR4 board 1
Maximum Junction-to-Ambient (steady state) RthJA 90 °C/W Steady state, per note d 1
Maximum Junction-to-Case (steady state) RthJC 0.8 1.1 °C/W Steady state 1
Drain-Source Breakdown Voltage VDS 40 V VGS = 0 V, ID = 250 µA 2
VDS Temperature Coefficient VDS/TJ 35 mV/°C ID = 250 µA 2
VGS(th) Temperature Coefficient VGS(th)/TJ -5.5 mV/°C 2
Gate-Source Threshold Voltage VGS(th) 1.2 2.5 V VDS = VGS, ID = 250 µA 2
Gate-Source Leakage IGSS -100 100 nA VDS = 0 V, VGS = ±20 V 2
Zero Gate Voltage Drain Current IDSS 1 µA VDS = 40 V, VGS = 0 V 2
Zero Gate Voltage Drain Current IDSS 10 µA VDS = 40 V, VGS = 0 V, TJ = 55 °C 2
On-State Drain Current ID(on) 70 A VDS 5 V, VGS = 10 V 2
Drain-Source On-State Resistance RDS(on) 0.006 Ω VGS = 4.5 V, ID = 29 A 2
Gate Resistance Rg 1.4 2.1 Ω f = 1 MHz 2
Turn-On Delay Time td(on) 18 27 ns VDD = 15 V, RL = 0.555 Ω, ID 27 A, VGEN = 10 V, Rg = 1 Ω 2
Rise Time tr 11 17 ns VDD = 15 V, RL = 0.555 Ω, ID 27 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 70 105 ns VDD = 15 V, RL = 0.555 Ω, ID 27 A, VGEN = 10 V, Rg = 1 Ω 2
Fall Time tf 10 15 ns VDD = 15 V, RL = 0.555 Ω, ID 27 A, VGEN = 10 V, Rg = 1 Ω 2
Turn-On Delay Time td(on) 55 83 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Rise Time tr 180 270 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Turn-Off Delay Time td(off) 55 83 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Fall Time tf 12 18 ns VDD = 15 V, RL = 0.625 Ω, ID 24 A, VGEN = 4.5 V, Rg = 1 Ω 2
Pulse Diode Forward Current ISM 100 A 2
Body Diode Voltage VSD 0.8 1.2 V IS = 22 A 2
Body Diode Reverse Recovery Time trr 52 78 ns IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2
Body Diode Reverse Recovery Charge Qrr 70.2 105 nC IF = 20 A, di/dt = 100 A/µs, TJ = 25 °C 2

CAD (KiCad official)

  • Symbol: AP0504GMT-HF-VB
  • Footprint: Package_DFN_QFN:DFN-S-8-1EP_6x5mm_P1.27mm
  • 3D model: DFN5x6-8 (KiCad packages3D, STEP)
  • 3D model files: ap0504gmt-hf-vb-etched.step / ap0504gmt-hf-vb-etched.glb carry the MPN laser-etched on the die in a toggleable Adom.LaserEtch group (Fusion-ready); ap0504gmt-hf-vb.step / ap0504gmt-hf-vb.glb are the bare package body.

Provenance

Data extracted from the manufacturer datasheet, not a distributor listing:

  • Datasheet: VBsemi Elec datasheet (7 pp, sha256 aed92195d5d1fc6e, retrieved 2026-10-20, tier: lcsc)
  • Extractor: parts-factory 2.0.0 / extract_pins 0.3, primary claude-sonnet-5-5 (text+vision), consensus claude-opus-5-5 (agreed), guards: pin_guards 0.1: passed. Pins are checked against the footprint pad set and their cited datasheet pages before publish.
  • CAD: KiCad official libraries (CC-BY-SA 4.0).

Datasheet PDF